페이지 363 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IDT71256SA20YI8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
패키지: 28-BSOJ (0.300", 7.62mm Width)
재고5,040
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
IS62WV5128BLL-55TI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고5,664
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
55ns
55ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
hot CY62256NL-70PXC
Cypress Semiconductor Corp

IC SRAM 256KBIT 70NS 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고35,892
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
hot MT47H32M16CC-37E:B
Micron Technology Inc.

IC SDRAM 512MBIT 266MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 500ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (12x12.5)
패키지: 84-TFBGA
재고54,000
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
267MHz
15ns
500ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-FBGA (12x12.5)
MT28F004B5VP-8 T TR
Micron Technology Inc.

IC FLASH 4MBIT 80NS 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 80ns
  • Access Time: 80ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP I
패키지: 40-TFSOP (0.724", 18.40mm Width)
재고7,248
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
80ns
80ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP I
hot M28W320CB90N6
Micron Technology Inc.

IC FLASH 32MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고15,012
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT49BV002N-90TI
Microchip Technology

IC FLASH 2MBIT 90NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고5,312
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
CY7C1361KVE33-133AXI
Cypress Semiconductor Corp

SYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,336
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
6.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
EDB8132B4PM-1D-F-R TR
Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 168FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-WFBGA
  • Supplier Device Package: 168-FBGA (12x12)
패키지: 168-WFBGA
재고4,416
DRAM
SDRAM - Mobile LPDDR2
8Gb (256M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
168-WFBGA
168-FBGA (12x12)
IS42VM32800K-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고7,824
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
166MHz
-
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
hot S29GL512S11FHIV20
Cypress Semiconductor Corp

IC FLASH 512MBIT 110NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
패키지: 64-LBGA
재고5,360
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
IS42VM16800H-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고5,344
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
166MHz
-
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
CY62147GE-45ZSXIT
Cypress Semiconductor Corp

MICROPOWER SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,904
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
-
-
-
BR25040-10TU-2.7
Rohm Semiconductor

IC EEPROM 4KBIT 3MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,040
EEPROM
EEPROM
4Kb (512 x 8)
SPI
3MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
24AA08T-I/MC
Microchip Technology

IC EEPROM 8KBIT 400KHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (256 x 8 x 4)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
패키지: 8-VFDFN Exposed Pad
재고5,952
EEPROM
EEPROM
8Kb (256 x 8 x 4)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
S25FL128SAGBHN203
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: 24-TBGA
재고7,008
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
MT53D1024M32D4NQ-046 AAT ES :D TR
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,384
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 105°C (TA)
-
-
-
MT53B512M64D4NZ-062 WT ES:D TR
Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,504
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT53D512M16D1DS-046 AIT:D TR
Micron Technology Inc.

IC DRAM LPDDR4 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,232
DRAM
SDRAM - Mobile LPDDR4
8Gb (512M x 16)
-
2.133GHz
-
-
-
-40°C ~ 95°C (TC)
Surface Mount
-
-
NDS73PT9-16AT-TR
Insignis Technology Corporation

SDR 128MB X32 TSOPII 86L 10X22(X

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: -
Request a Quote
DRAM
SDRAM
128Mbit
Parallel
166 MHz
-
-
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
FM24C05ULVMT8
Fairchild Semiconductor

IC EEPROM 4KBIT I2C 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 100 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: 3.5 µs
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: -
Request a Quote
EEPROM
EEPROM
4Kbit
I2C
100 kHz
15ms
3.5 µs
2.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BY25Q40AWTIG-R
BYTe Semiconductor

4 MBIT, WIDE VCC (1.7V TO 3.6V),

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 4Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 85 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 17 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
4Mbit
SPI - Quad I/O
85 MHz
3ms
17 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
IS22TF08G-JCLA2-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 64GBIT EMMC 153VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (pSLC)
  • Memory Size: 64Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (pSLC)
64Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
27C512AE200-883C
National Semiconductor

IC EPROM 512KBIT PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 200 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
EPROM
EPROM - OTP
512Kbit
Parallel
-
-
200 ns
4.5V ~ 5.5V
-40°C ~ 125°C (TA)
-
-
-
7005S12PF
Renesas Electronics Corporation

IC RAM 8K X 8 DUAL PORT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
64Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
W66CP2NQUAHJ
Winbond Electronics

IC DRAM 4GBIT LVSTL 11 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
4Gbit
LVSTL_11
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MB85RS2MTYPNF-GS-AWERE2
Fujitsu Semiconductor Memory Solution

IC FRAM 2MBIT SPI 50MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mbit
  • Memory Interface: SPI
  • Clock Frequency: 50 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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FRAM
FRAM (Ferroelectric RAM)
2Mbit
SPI
50 MHz
-
-
1.8V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FT24C04A-KNR-T
Fremont Micro Devices Ltd

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550 ns
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: -
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EEPROM
EEPROM
4Kbit
I2C
1 MHz
5ms
550 ns
1.8V ~ 5.5V
-40°C ~ 85°C
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)