이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
IC DRIVER GATE HALF BRIDGE 8WSON
|
패키지: 8-WDFN Exposed Pad |
재고5,728 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.2V | 1.3A, 1.4A | Non-Inverting | 118V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (4x4) |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고197,004 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 1.6A, 1.6A | Non-Inverting | 118V | 600ns, 600ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Vishay Siliconix |
IC DRIVER GATE HALF BRIDGE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,092 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1A, 1A | Non-Inverting | 30V | 30ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN
|
패키지: 10-WFDFN Exposed Pad |
재고3,472 |
|
Independent | 2 | N-Channel MOSFET | 6.5 V ~ 28 V | - | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
||
IXYS |
IC GATE DRIVER 2A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고42,684 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC DRIVR MOSF 12A LOSIDE TO220-5
|
패키지: TO-220-5 |
재고25,140 |
|
Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 12A, 12A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 70°C (TA) | Through Hole | TO-220-5 | TO-220-5 |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,728 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Linear Technology |
IC MOSFET DVR HI-SIDE DUAL 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고146,664 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 24 V | 0.8V, 2V | - | Non-Inverting | - | - | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Linear Technology |
IC GATE DRVR N-CH MOSFET 10MSOP
|
패키지: - |
재고3,856 |
|
Single | 1 | N-Channel MOSFET | 3.5 V ~ 15 V | - | - | Non-Inverting | - | 90ns, 40ns | -40°C ~ 125°C (TJ) | - | - | - |
||
Intersil |
IC SYNC RECT MOSFET DRVR 10-DFN
|
패키지: 10-VFDFN Exposed Pad |
재고3,936 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Texas Instruments |
IC NONINVERT FET DRVR SOT-23-5
|
패키지: SC-74A, SOT-753 |
재고6,240 |
|
Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | Surface Mount | SC-74A, SOT-753 | SOT-23-5 |
||
IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고39,012 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
재고4,064 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
||
ON Semiconductor |
IC DRIVER GATE SINGLE IGBT 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고14,568 |
|
Single | 1 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 3.2V | 1A, 2A | Inverting | - | 17ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,288 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
IC GATE DVR DUAL 2A 8-MLP
|
패키지: 8-WDFN Exposed Pad |
재고6,256 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
||
Intersil |
IC HALF BRIDGE DRIVER 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,908 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL ENABLE 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고9,948 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고18,648 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Intersil |
IC DRIVER HALF BRDG 100V 8EPSOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고24,858 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 0.8V, 2.2V | 2A, 2A | Non-Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,592 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.5V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -10°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고3,456 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | 22V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,656 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1V, 2V | 2A, 2A | Non-Inverting | 36V | 8ns, 8ns | -10°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
ON Semiconductor |
IC GATE DRIVER HALF BRIDG 20SOIC
|
패키지: 20-SOIC (0.295", 7.50mm Width) |
재고7,248 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 2.5V | 350mA, 650mA | Non-Inverting | 200V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
||
Monolithic Power Systems Inc. |
100V, 4A, HIGH FREQUENCY HALF-BR
|
패키지: - |
Request a Quote |
|
Independent | 2 | N-Channel MOSFET | 9V ~ 16V | - | 4A, 4A | Non-Inverting | 118 V | 15ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC HALF BRIDGE GATE DRIVER 650V
|
패키지: - |
Request a Quote |
|
Synchronous | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.1V, 1.7V | 290mA, 700mA | Non-Inverting | 650 V | 100ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | PG-DSO-14-49 |
||
NXP |
GATE DRIVER
|
패키지: - |
Request a Quote |
|
Single | 1 | IGBT, SiC MOSFET | 4.5V ~ 40V | - | 15A, 15A | Non-Inverting | - | - | -40°C ~ 125°C (TA) | Surface Mount | 32-BSSOP (0.295", 7.50mm Width) | 32-SOIC |
||
Power Integrations |
GATE DRIVER CORE, SCALE-2, 1700V
|
패키지: - |
Request a Quote |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 14.5V ~ 15.5V | - | 35A, 35A | - | 1700 V | 20ns, 20ns | -40°C ~ 85°C (TA) | Chassis Mount | Module | Module |