페이지 15 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  15/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot LM27222SDX
Texas Instruments

IC MOSFET DVR SYNC 4.5A HS 8WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 6.85 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 4.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 17ns, 12ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (4x4)
패키지: 8-WDFN Exposed Pad
재고6,112
Synchronous
2
N-Channel MOSFET
4 V ~ 6.85 V
-
3A, 4.5A
Non-Inverting
33V
17ns, 12ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-WSON (4x4)
MAX4429ESA+T
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,760
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IXDI414PI
IXYS

IC DRIVER MOSF/IGBT 14A 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 20ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고7,860
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3.5V
14A, 14A
Inverting
-
22ns, 20ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot IXDD404SIA
IXYS

IC MOSFET DRVR DUAL 4A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 16ns, 13ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고92,256
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 2.5V
4A, 4A
Non-Inverting
-
16ns, 13ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IXDI409SI
IXYS

IC MOSFET DRVR LS 9A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고58,908
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3.5V
9A, 9A
Inverting
-
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS2302STRPBF
Infineon Technologies

IC DRIVER HALF-BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 130ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,312
Synchronous
2
IGBT, N-Channel MOSFET
5 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Non-Inverting
600V
130ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UCC27200ADDA
Texas Instruments

IC DVR HIGH/LOW SIDE 3A 8SOPWR

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 17 V
  • Logic Voltage - VIL, VIH: 3V, 8V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 120V
  • Rise / Fall Time (Typ): 8ns, 7ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO PowerPad
패키지: 8-PowerSOIC (0.154", 3.90mm Width)
재고5,712
Independent
2
N-Channel MOSFET
8 V ~ 17 V
3V, 8V
3A, 3A
Non-Inverting
120V
8ns, 7ns
-40°C ~ 140°C (TJ)
Surface Mount
8-PowerSOIC (0.154", 3.90mm Width)
8-SO PowerPad
MAX15019BASA+T
Maxim Integrated

IC MOSF DRVR HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 50ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,296
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
3A, 3A
Inverting, Non-Inverting
125V
50ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IX2204NETR
IXYS Integrated Circuits Division

IC IGBT GATE DVR DUAL 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: -10 V ~ 25 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고3,056
Independent
2
IGBT
-10 V ~ 25 V
0.8V, 2V
2A, 4A
Non-Inverting
-
-, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
LM5104SDX/NOPB
Texas Instruments

IC DVR HALF-BRIDGE HV 10WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.6A, 1.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 600ns, 600ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-WSON (4x4)
패키지: 10-WDFN Exposed Pad
재고2,240
Synchronous
2
N-Channel MOSFET
9 V ~ 14 V
0.8V, 2.2V
1.6A, 1.6A
Inverting, Non-Inverting
118V
600ns, 600ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-WSON (4x4)
hot MAX8552EUB+
Maxim Integrated

IC DRIVER MOSFET HS 10-UMAX

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 6.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-uMAX
패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
재고5,312
Synchronous
2
N-Channel MOSFET
4.5 V ~ 6.5 V
0.8V, 2.5V
-
Non-Inverting
-
14ns, 9ns
-40°C ~ 150°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
10-uMAX
hot IR21271PBF
Infineon Technologies

IC DRIVER 600V 200/420MA 8-DIP

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고33,420
Single
1
IGBT, N-Channel MOSFET
9 V ~ 20 V
0.8V, 3V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
1EDI20I12AFXUMA1
Infineon Technologies

IC IGBT DVR 1200V 2A 8DSO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 13 V ~ 35 V
  • Logic Voltage - VIL, VIH: 1.5V, 3.5V
  • Current - Peak Output (Source, Sink): 4A, 3.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 10ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-51
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,864
Single
1
IGBT
13 V ~ 35 V
1.5V, 3.5V
4A, 3.5A
Inverting, Non-Inverting
1200V
10ns, 9ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-51
FAN3121TMX_F085
Fairchild/ON Semiconductor

IC GATE DVR SGL 9A HS INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 10.6A, 11.4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 23ns, 19ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,312
Single
1
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
10.6A, 11.4A
Inverting
-
23ns, 19ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR21814SPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고6,972
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
1.9A, 2.3A
Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
ISL6610CBZ-T
Renesas Electronics America

IC MOSFET DRVR DUAL SYNC 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고4,992
Synchronous
4
N-Channel MOSFET
4.5 V ~ 5.5 V
-
-, 4A
Non-Inverting
36V
8ns, 8ns
0°C ~ 125°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot FAN3121CMX
ON Semiconductor

IC GATE DVR SGL 9A CMOS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10.6A, 11.4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 23ns, 19ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,856
Single
1
N-Channel MOSFET
4.5 V ~ 18 V
-
10.6A, 11.4A
Inverting
-
23ns, 19ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
EB01-FS225R12KE3
Power Integrations

MODULE GATE DVR P&P SCALE 1

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,080
-
-
-
-
-
-
-
-
-
-
-
-
-
2SD315AI-25
Power Integrations

IGBT DVR CORE 2500V

  • Driven Configuration: Half-Bridge
  • Channel Type: -
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 15V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 18A, 18A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,984
-
2
IGBT, N-Channel, P-Channel MOSFET
15V
-
18A, 18A
-
-
-
-40°C ~ 85°C (TA)
-
-
-
ISL6613AECB
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고2,544
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
ISL6208CB-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.5V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -10°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,264
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
0.5V, 2V
2A, 2A
Non-Inverting
33V
8ns, 8ns
-10°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ISL6612BCBZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고13,992
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MCP14A1202T-E/MNY
Microchip Technology

12.0A SINGLE NON-INV MOSFET DRIV

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 12A, 12A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고6,784
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2V
12A, 12A
Non-Inverting
-
25ns, 25ns
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
DRV8300UDRGER
Texas Instruments

100-V MAX, SIMPLE THREE-PHASE GA

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: 3-Phase
  • Number of Drivers: 3
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8.7V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 750mA, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125 V
  • Rise / Fall Time (Typ): 12ns, 24ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: 24-VQFN (4x4)
패키지: -
재고8,775
3-Phase
3
N-Channel MOSFET
8.7V ~ 20V
0.8V, 2V
750mA, 1.5A
Inverting, Non-Inverting
125 V
12ns, 24ns
-40°C ~ 125°C (TA)
Surface Mount
24-VFQFN Exposed Pad
24-VQFN (4x4)
IGD616IC1
Power Integrations

POWER MODULE GATE DRVR

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 14V ~ 16V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 100ns, 80ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module, 24 Leads
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1
IGBT, N-Channel, P-Channel MOSFET
14V ~ 16V
-
-
Inverting
-
100ns, 80ns
-40°C ~ 85°C (TA)
Through Hole
36-DIP Module, 24 Leads
Module
6ED2742S01QXTMA1
Infineon Technologies

THREE-PHASE MOTOR CONTROL GATE D

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6V ~ 140V
  • Logic Voltage - VIL, VIH: 1.4V, 1.4V
  • Current - Peak Output (Source, Sink): 1A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 160 V
  • Rise / Fall Time (Typ): 20ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-PowerVFQFN
  • Supplier Device Package: 32-VQFN (5x5)
패키지: -
재고6,375
3-Phase
6
N-Channel MOSFET
6V ~ 140V
1.4V, 1.4V
1A, 2A
Non-Inverting
160 V
20ns, 10ns
-40°C ~ 125°C (TA)
Surface Mount
32-PowerVFQFN
32-VQFN (5x5)
MPQ6528GVE-AEC1-P
Monolithic Power Systems Inc.

5V TO 60V, H-BRIDGE GATE DRIVER,

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5V ~ 60V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 800mA, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-VFQFN Exposed Pad
  • Supplier Device Package: 28-QFN (4x5)
패키지: -
재고1,500
Synchronous
2
N-Channel MOSFET
5V ~ 60V
0.8V, 2V
800mA, 1A
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Surface Mount
28-VFQFN Exposed Pad
28-QFN (4x5)
LTC7060EMSE-TRPBF
Analog Devices Inc.

IC HALF BRIDGE DRIVER 12MSOP

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: 6V ~ 14V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-TSSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 12-MSOP-EP
패키지: -
재고4,122
-
-
-
6V ~ 14V
-
-
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
12-TSSOP (0.118", 3.00mm Width) Exposed Pad
12-MSOP-EP