페이지 164 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  164/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXF611S1
IXYS

IC DRIVER MOSF/IGBT HALF 8-SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC
재고2,928
-
-
-
-
-
-
-
-
-
-
Surface Mount
8-SOIC
8-SOIC
IXA611P7
IXYS

IC DRIVER HALF BRDG 600MA 14-PDI

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 6V, 7V
  • Current - Peak Output (Source, Sink): 600mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 650V
  • Rise / Fall Time (Typ): 23ns, 22ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고4,464
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 35 V
6V, 7V
600mA, 600mA
Non-Inverting
650V
23ns, 22ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
ISL6612EIB-T
Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고4,736
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MIC4451ABM
Microchip Technology

IC DRIVER MOSFET 12A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 12A, 12A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 24ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,824
Single
1
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
12A, 12A
Inverting
-
20ns, 24ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MC33152P
ON Semiconductor

IC DRIVER MOSFET DUAL HS 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.1 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.6V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 36ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고120,648
Independent
2
N-Channel MOSFET
6.1 V ~ 18 V
0.8V, 2.6V
1.5A, 1.5A
Non-Inverting
-
36ns, 32ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot ICL7667CPA
Maxim Integrated

IC DRIVER MOSFET DUAL PWR 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 17 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고189,996
Independent
2
N-Channel MOSFET
4.5 V ~ 17 V
0.8V, 2V
-
Inverting
-
20ns, 20ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IRS2336STRPBF
Infineon Technologies

IC GATE DRIVER HV 3PHASE 28-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고6,848
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
hot IR4426STRPBF
Infineon Technologies

IC DRIVER DUAL LOW SIDE 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 2.3A, 3.3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,824
Independent
2
IGBT, N-Channel MOSFET
6 V ~ 20 V
0.8V, 2.7V
2.3A, 3.3A
Inverting
-
15ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX5075AAUA+T
Maxim Integrated

IC DRVR FET P-P 8-UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고30,000
Synchronous
2
N-Channel MOSFET
4.5 V ~ 15 V
-
3A, 3A
RC Input Circuit
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
LM25101CMA/NOPB
Texas Instruments

IC GATE DVR HI/LO SIDE 1A 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2.3V, -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 990ns, 715ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,168
Independent
2
N-Channel MOSFET
9 V ~ 14 V
2.3V, -
1A, 1A
Non-Inverting
100V
990ns, 715ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
LTC7004EMSE#TRPBF
Linear Technology

FAST 65V PROTECTED HIGH-SIDE NMO

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 60V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 80V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,920
Single
1
N-Channel MOSFET
60V (Max)
-
-
Non-Inverting
80V
90ns, 40ns
-40°C ~ 125°C (TJ)
-
-
-
MP18024HN-LF-Z
Monolithic Power Systems Inc.

IC GATE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1V, 2.4V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 15ns, 9ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,280
Independent
2
N-Channel MOSFET
9 V ~ 16 V
1V, 2.4V
-
Non-Inverting
100V
15ns, 9ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MC33152VDR2G
ON Semiconductor

IC MOSFET DRIVER DUAL HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.1 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.6V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 36ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고485,904
Independent
2
N-Channel MOSFET
6.1 V ~ 18 V
0.8V, 2.6V
1.5A, 1.5A
Non-Inverting
-
36ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DRV8702DQRHBRQ1
Texas Instruments

IC HALF-BRIDGE GATE DRVR 32VQFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5.5 V ~ 45 V
  • Logic Voltage - VIL, VIH: 0.8V, 1.5V
  • Current - Peak Output (Source, Sink): 240mA, 420mA
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5x5)
패키지: 32-VFQFN Exposed Pad
재고4,416
Synchronous
2
N-Channel MOSFET
5.5 V ~ 45 V
0.8V, 1.5V
240mA, 420mA
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
32-VFQFN Exposed Pad
32-VQFN (5x5)
hot TC4426ACPA
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고122,256
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
25ns, 25ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot HIP4082IPZ
Intersil

IC DRIVER FET H-BRIDGE 16DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 1.4A, 1.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 9ns, 9ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고38,256
Independent
4
N-Channel MOSFET
8.5 V ~ 15 V
1V, 2.5V
1.4A, 1.3A
Non-Inverting
95V
9ns, 9ns
-55°C ~ 150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
IR44252LTRPBF
Infineon Technologies

IC GATE DRVR LOW SIDE SOT23-5L

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.7V
  • Current - Peak Output (Source, Sink): 300mA, 550mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 85ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
패키지: SC-74A, SOT-753
재고6,448
Single
1
IGBT, N-Channel MOSFET
5 V ~ 18 V
0.6V, 2.7V
300mA, 550mA
Non-Inverting
-
85ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
SC-74A, SOT-753
SOT-23-5
hot UC3706N
Texas Instruments

IC HS MOSFET DRIVER 16-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 40 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 30ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고309,504
Independent
2
N-Channel MOSFET
5 V ~ 40 V
0.8V, 2.2V
1.5A, 1.5A
Inverting, Non-Inverting
-
40ns, 30ns
0°C ~ 70°C (TA)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
hot ISL6208CRZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.5V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -10°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: 8-QFN (3x3)
패키지: 8-VQFN Exposed Pad
재고5,632
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
0.5V, 2V
2A, 2A
Non-Inverting
33V
8ns, 8ns
-10°C ~ 125°C (TJ)
Surface Mount
8-VQFN Exposed Pad
8-QFN (3x3)
MCP14A0303T-E/MNY
Microchip Technology

3.0A MATCHED, HIGH -SPEED, LOW-S

  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 12ns, 12ns
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고30,570
Independent
2
IGBT
4.5 V ~ 18 V
0.8V, 2V
3A, 3A
Inverting
-
12ns, 12ns
-40°C ~ 125°C
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
ISL89160FBEBZ-T
Renesas Electronics America

IC MOSFET DRIVER 2CH 6A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.85V, 3.15V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,024
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.85V, 3.15V
6A, 6A
Non-Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
ISL89410IPZ
Renesas Electronics America

IC DVR MOSFET DUAL-CH 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고3,776
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
2A, 2A
Non-Inverting
-
7.5ns, 10ns
-40°C ~ 125°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
LTC1177IS-12
Linear Technology

IC MOSFET DVR ISOLATD 12V 28SOIC

  • Driven Configuration: High-Side
  • Channel Type: -
  • Number of Drivers: 1
  • Gate Type: -
  • Voltage - Supply: 11.4V ~ 12.6V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고3,520
-
1
-
11.4V ~ 12.6V
-
-
Non-Inverting
-
-
-
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
MC33883HEG
NXP

IC H-BRIDGE PRE-DRIVER 20SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: -
  • Number of Drivers: 4
  • Gate Type: -
  • Voltage - Supply: 5.5V ~ 55V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고6,864
-
4
-
5.5V ~ 55V
-
-
Non-Inverting
-
-
-
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
2ED2108S06FXUMA1
Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): 290mA, 700mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 650 V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-53
패키지: -
재고37,479
Synchronous
1
IGBT, N-Channel MOSFET
10V ~ 20V
1.1V, 1.7V
290mA, 700mA
Non-Inverting
650 V
100ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-53
1SP0335V2M1C-FZ250R65KE3
Power Integrations

IGBT GATE DRIVER P/P 1CH SCALE-2

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 23.5V ~ 26.5V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 35A, 35A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 6500 V
  • Rise / Fall Time (Typ): 9ns, 30ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1
IGBT
23.5V ~ 26.5V
-
35A, 35A
-
6500 V
9ns, 30ns
-40°C ~ 85°C
Chassis Mount
Module
Module
R2J20604NP-13
Renesas Electronics Corporation

HALF BRIDGE BASED MOSFET DRIVER

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
LM2104DR
Texas Instruments

107-V, 0.5-A/0.8-A HALF-BRIDGE G

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 800mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고9,000
Synchronous
1
N-Channel MOSFET
9V ~ 18V
0.8V, 2V
500mA, 800mA
Inverting
-
18ns, 18ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC