페이지 165 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  165/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IR2011STR
Infineon Technologies

HI/LO SIDE DRVR 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고52,692
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.2V
1A, 1A
Inverting
200V
35ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2301
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 130ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고31,740
Independent
2
IGBT, N-Channel MOSFET
5 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
130ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
IR2136STR
Infineon Technologies

IC DRIVER 3PHASE 600V 28-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고6,752
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IR1176STR
Infineon Technologies

IC DRIVER RECT SYNC 5V 4A 20SSOP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 5.25 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 20-SSOP
패키지: 20-SSOP (0.209", 5.30mm Width)
재고6,944
Single
1
N-Channel MOSFET
4 V ~ 5.25 V
-
4A, 4A
Non-Inverting
-
20ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
20-SSOP (0.209", 5.30mm Width)
20-SSOP
UC2714DPG4
Texas Instruments

IC COMP SWITCH FET DRIVER 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 7 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 30ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고4,320
Synchronous
2
N-Channel, P-Channel MOSFET
7 V ~ 20 V
0.8V, 2V
500mA, 1A
Non-Inverting
-
30ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot LM5100BSDX/NOPB
Texas Instruments

IC DRIVER HALF-BRIDGE HV 10WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2.3V, -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 570ns, 430ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-WSON (4x4)
패키지: 10-WDFN Exposed Pad
재고65,016
Independent
2
N-Channel MOSFET
9 V ~ 14 V
2.3V, -
2A, 2A
Non-Inverting
118V
570ns, 430ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-WSON (4x4)
LM5100CMA/NOPB
Texas Instruments

IC DVR HALF-BRIDGE HV 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2.3V, -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 990ns, 715ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,992
Independent
2
N-Channel MOSFET
9 V ~ 14 V
2.3V, -
1A, 1A
Non-Inverting
118V
990ns, 715ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6613CB-T
Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,128
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
LM2724AM/NOPB
Texas Instruments

IC DRIVER MOSFET DUAL SYNC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.3 V ~ 6.8 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3.2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 28V
  • Rise / Fall Time (Typ): 17ns, 12ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,100
Synchronous
2
N-Channel MOSFET
4.3 V ~ 6.8 V
-
3A, 3.2A
Non-Inverting
28V
17ns, 12ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ISL6614ACRZ
Intersil

IC DRIVER DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
패키지: 16-VQFN Exposed Pad
재고24,948
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
hot TC4428AEUA
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고13,764
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
-
25ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
IXDI602D2TR
IXYS Integrated Circuits Division

2A 8 DFN DUAL INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 6.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x4)
패키지: 8-VDFN Exposed Pad
재고4,336
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
2A, 2A
Inverting
-
7.5ns, 6.5ns
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN-EP (5x4)
hot IRS2003SPBF
Infineon Technologies

IC DRIVER HALF BRIDGE 200V 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고15,372
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Inverting, Non-Inverting
200V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR2235JTRPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고6,624
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2V
250mA, 500mA
Inverting
1200V
90ns, 40ns
125°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
PM8851D
STMicroelectronics

IC GATE DVR 1A LOW SIDE SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 800mA, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고4,544
Single
1
N-Channel, P-Channel MOSFET
10 V ~ 18 V
-
800mA, 1A
Non-Inverting
-
20ns, 20ns (Max)
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot MIC5011YM
Microchip Technology

IC DRIVER MIN PARTS HI/LO 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.75 V ~ 32 V
  • Logic Voltage - VIL, VIH: 2V, 4.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고180,828
Single
1
N-Channel MOSFET
4.75 V ~ 32 V
2V, 4.5V
-
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot UCC27524ADR
Texas Instruments

IC GATE DVR LO-SIDE DL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 1V, 2.3V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 6ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고208,992
Independent
2
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
1V, 2.3V
5A, 5A
Non-Inverting
-
7ns, 6ns
-40°C ~ 140°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IXDN630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고23,808
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
hot UCC27710DR
Texas Instruments

UCC27710DR

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 1A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 35ns, 16ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고60,000
Independent
2
IGBT, N-Channel, P-Channel MOSFET
10 V ~ 20 V
1.2V, 2V
500mA, 1A
-
600V
35ns, 16ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL89401AR3Z
Renesas Electronics America

IC MOSFET DRVR 100V 1.25A 9-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1.4V, 2.2V
  • Current - Peak Output (Source, Sink): 1.25A, 1.25A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 16ns, 16ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-VFDFN Exposed Pad
  • Supplier Device Package: 9-DFN-EP (3x3)
패키지: 9-VFDFN Exposed Pad
재고25,938
Independent
2
N-Channel MOSFET
9 V ~ 14 V
1.4V, 2.2V
1.25A, 1.25A
Non-Inverting
100V
16ns, 16ns
-40°C ~ 125°C (TJ)
Surface Mount
9-VFDFN Exposed Pad
9-DFN-EP (3x3)
MAX15025BATB+
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,840
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
2V, 4.25V
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 125°C
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
HIP2121FRTAZ
Renesas Electronics America

IC HALF BRIDGE FET DRIVER 10TDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1.4V, 2.2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-TDFN (4x4)
패키지: 10-WDFN Exposed Pad
재고4,704
Synchronous
2
N-Channel MOSFET
8 V ~ 14 V
1.4V, 2.2V
2A, 2A
Inverting
114V
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-TDFN (4x4)
ISL6612EIB
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고2,384
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
DGD2003S8-13
Diodes Incorporated

IC GATE HV DRVR SO-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO Type TH
패키지: 8-SOIC (0.154", 3.90mm Width)
재고23,640
Synchronous
2
N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200V
70ns, 35ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO Type TH
1SD210F2-FX400R65KF2_OPT1
Power Integrations

IGBT DRIVER P/P 1CH COATING

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 15.5V ~ 16.8V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 10A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200 V
  • Rise / Fall Time (Typ): 100ns, 100ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1
IGBT
15.5V ~ 16.8V
-
6A, 10A
-
1200 V
100ns, 100ns
-40°C ~ 85°C
Chassis Mount
Module
Module
MIC4469ZWMTR
Microchip Technology

QUAD 1.2A-PEAK LOW-SIDE MOSFET D

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.2A, 1.2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 13ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
Independent
4
N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
1.2A, 1.2A
Inverting, Non-Inverting
-
14ns, 13ns
0°C ~ 70°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
ADP3110KRZ
onsemi

IC MOSFET DRIVER DUAL 12V 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.6V ~ 13.2V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 35 V
  • Rise / Fall Time (Typ): 20ns, 11ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
Synchronous
2
N-Channel MOSFET
4.6V ~ 13.2V
0.8V, 2V
-
Inverting, Non-Inverting
35 V
20ns, 11ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IX4351NETR
IXYS Integrated Circuits Division

MOSFET IGBT SIC DRIVER 9A

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: -10V ~ 25V
  • Logic Voltage - VIL, VIH: 1V, 2.2V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: CMOS, TTL
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 16-SOIC-EP
패키지: -
재고22,986
Single
1
IGBT, SiC MOSFET
-10V ~ 25V
1V, 2.2V
9A, 9A
CMOS, TTL
-
10ns, 10ns
-40°C ~ 125°C (TA)
Surface Mount
16-SOIC (0.154", 3.90mm Width) Exposed Pad
16-SOIC-EP