페이지 118 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
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Micron Technology Inc. 제품 - 메모리

기록 10,993
페이지  118/393
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT40A512M16JY-075E AIT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,984
DRAM
SDRAM - DDR4
8Gb (512M x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A4G4NRE-083E:B
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (4G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,128
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A4G4NRE-075E:B
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (4G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,472
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G8NRE-083E:B
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,032
DRAM
SDRAM - DDR4
16Gb (2G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G8FSE-093E:A
Micron Technology Inc.

IC DRAM 16G PARALLEL 1067MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,640
DRAM
SDRAM - DDR4
16Gb (2G x 8)
Parallel
1067MHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G4WE-083E:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,968
DRAM
SDRAM - DDR4
8Gb (2G x 4)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G4WE-075E:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,096
DRAM
SDRAM - DDR4
8Gb (2G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A256M16GE-075E IT:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,800
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
hot MT40A256M16GE-075E AIT:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,392
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A256M16GE-075E AAT:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,280
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 105°C (TC)
-
-
-
MT40A256M16GE-062E IT:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,320
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A1G8WE-083E AUT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,912
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 125°C (TC)
-
-
-
MT40A1G8WE-083E AIT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,128
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A1G8WE-083E AAT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,256
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 105°C (TC)
-
-
-
MT40A1G8WE-075E:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,008
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A1G8WE-075E IT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,360
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A1G8WE-075E AIT:B
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,328
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A1G4RH-075E:B
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (1G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,960
DRAM
SDRAM - DDR4
4Gb (1G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
hot MT40A1G16WBU-083E:B
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (1G x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고38,040
DRAM
SDRAM - DDR4
16Gb (1G x 16)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT38W2011A90YZQXZI.X68
Micron Technology Inc.

PARALLEL/PSRAM 80M

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,464
-
-
-
-
-
-
-
-
-
-
-
-
MT38W1011A90YZQXZI.XB8
Micron Technology Inc.

PARALLEL/PSRAM 48M

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,048
-
-
-
-
-
-
-
-
-
-
-
-
MT38M5071A3063RZZI.YE8
Micron Technology Inc.

IC FLASH RAM 512M PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, PSRAM
  • Memory Size: 512Mb (32M x 16), 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,992
FLASH, RAM
FLASH, PSRAM
512Mb (32M x 16), 512Mb (32M x 16)
Parallel
133MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
MT38M5041A3034EZZI.XR6
Micron Technology Inc.

IC FLASH RAM 512M PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, PSRAM
  • Memory Size: 512Mb (32M x 16), 128M (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,856
FLASH, RAM
FLASH, PSRAM
512Mb (32M x 16), 128M (8M x 16)
Parallel
133MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
MT38M4041A3034EZZI.XK6
Micron Technology Inc.

IC FLASH RAM 256M PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH, PSRAM
  • Memory Size: 256Mb (16M x 16), 128M (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,000
FLASH, RAM
FLASH, PSRAM
256Mb (16M x 16), 128M (8M x 16)
Parallel
133MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
-
-
-
MT29TZZZ8D5JKEZB-107 W.95Q
Micron Technology Inc.

MLC EMMC/LPDDR3 72G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
-
-
-
-
-
-
-
-
-
-
-
-
MT29TZZZ8D5JKETS-107 W.95Q
Micron Technology Inc.

MLC EMMC/LPDDR3 72G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,088
-
-
-
-
-
-
-
-
-
-
-
-
hot MT29TZZZ7D7EKKBT-107 W.97V
Micron Technology Inc.

MLC EMMC/LPDDR3 280G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,792
-
-
-
-
-
-
-
-
-
-
-
-
MT29TZZZ7D6JKKFB-107 W.96V
Micron Technology Inc.

MLC EMMC/LPDDR3 152G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
-
-
-
-
-
-
-
-
-
-
-
-