페이지 119 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT44K64M18RB-093F:A	Micron Technology Inc.	RLDRAM 3 1.125G 64MX18 TBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,568	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	1067MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-093E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,464	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-107E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (32Mb x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,424	DRAM	DRAM	1.125Gb (32Mb x 36)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-107E IT:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (32Mb x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,136	DRAM	DRAM	1.125Gb (32Mb x 36)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K32M36RB-093E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (32Mb x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,048	DRAM	DRAM	1.125Gb (32Mb x 36)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K32M18RB-107E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,432	DRAM	DRAM	576Mb (32M x 18)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-093F:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,800	DRAM	DRAM	576Mb (16M x 36)	Parallel	1067MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K16M36RB-093E:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,424	DRAM	DRAM	576Mb (16M x 36)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT41K64M16TW-107 AUT:J	Micron Technology Inc.	IC DRAM 1G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고3,200	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41K512M8RG-107:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x10.6)	패키지: 78-TFBGA	재고7,680	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x10.6)
MT41K512M8RG-093:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x10.6)	패키지: 78-TFBGA	재고72,000	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x10.6)
MT41K512M16HA-125 AIT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	패키지: 96-TFBGA	재고4,368	DRAM	SDRAM - DDR3L	8Gb (512M x 16)	Parallel	800MHz	-	13.5ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
MT41K2G4RKB-107:N	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (2G x 4) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고5,760	DRAM	SDRAM - DDR3L	8Gb (2G x 4)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M16LY-107:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고4,288	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT41K1G8SN-125 IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x13.2)	패키지: 78-TFBGA	재고2,160	DRAM	SDRAM - DDR3L	8Gb (1G x 8)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x13.2)
MT41K1G8RKB-107:N	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고2,544	DRAM	SDRAM - DDR3L	8Gb (1G x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K128M16JT-107 IT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고3,856	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41J64M16TW-093:J	Micron Technology Inc.	IC DRAM 1G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,400	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	1067MHz	-	-	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-075E:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,752	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-075E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,176	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-075E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,568	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-075E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,384	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M8RH-062E:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.6GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,160	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.6GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-083E AUT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,176	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M16JY-083E AIT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,512	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-083E AAT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,344	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M16JY-075E:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,960	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16JY-075E IT:B	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,520	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-

MT44K64M18RB-093F:A

Micron Technology Inc.

RLDRAM 3 1.125G 64MX18 TBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,568

DRAM

1.125Gb (64Mb x 18)

Parallel

1067MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K64M18RB-093E:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,464

DRAM

1.125Gb (64Mb x 18)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K32M36RB-107E:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (32Mb x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,424

DRAM

1.125Gb (32Mb x 36)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K32M36RB-107E IT:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (32Mb x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,136

DRAM

1.125Gb (32Mb x 36)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

-

MT44K32M36RB-093E:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (32Mb x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,048

DRAM

1.125Gb (32Mb x 36)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K32M18RB-107E IT:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,432

DRAM

576Mb (32M x 18)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

-

MT44K16M36RB-093F:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,800

DRAM

576Mb (16M x 36)

Parallel

1067MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K16M36RB-093E:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,424

DRAM

576Mb (16M x 36)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT41K64M16TW-107 AUT:J

Micron Technology Inc.

IC DRAM 1G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고3,200

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT41K512M8RG-107:N

Micron Technology Inc.

IC DRAM 4G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x10.6)

패키지: 78-TFBGA

재고7,680

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x10.6)

MT41K512M8RG-093:N

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x10.6)

패키지: 78-TFBGA

재고72,000

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x10.6)

MT41K512M16HA-125 AIT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

패키지: 96-TFBGA

재고4,368

DRAM

SDRAM - DDR3L

8Gb (512M x 16)

Parallel

800MHz

-

13.5ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

MT41K2G4RKB-107:N

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (2G x 4)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고5,760

DRAM

SDRAM - DDR3L

8Gb (2G x 4)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K256M16LY-107:N

Micron Technology Inc.

IC DRAM 4G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고4,288

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT41K1G8SN-125 IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x13.2)

패키지: 78-TFBGA

재고2,160

DRAM

SDRAM - DDR3L

8Gb (1G x 8)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x13.2)

MT41K1G8RKB-107:N

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고2,544

DRAM

SDRAM - DDR3L

8Gb (1G x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K128M16JT-107 IT:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고3,856

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT41J64M16TW-093:J

Micron Technology Inc.

IC DRAM 1G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,400

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

1067MHz

-

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

-

MT40A512M8RH-075E:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,752

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT40A512M8RH-075E AUT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,176

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 125°C (TC)

-

MT40A512M8RH-075E AIT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,568

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

MT40A512M8RH-075E AAT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,384

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 105°C (TC)

-

MT40A512M8RH-062E:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.6GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,160

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.6GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT40A512M16JY-083E AUT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,176

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 125°C (TC)

-

MT40A512M16JY-083E AIT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,512

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

MT40A512M16JY-083E AAT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,344

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 105°C (TC)

-

MT40A512M16JY-075E:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,960

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT40A512M16JY-075E IT:B

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,520

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-