페이지 114 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C15PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,872
BZD27C7V5PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.5V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 7.45V Tolerance: ±6.04% Power - Max: 1W Impedance (Max) (Zzt): 2 Ohms Current - Reverse Leakage @ Vr: 50µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,728
BZD27C30P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 30V Tolerance: ±6.66% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 22V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,904
BZD27C30P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 30V Tolerance: ±6.66% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 22V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,760
1M130Z B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 130V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 700 Ohms Current - Reverse Leakage @ Vr: 5µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,648
BZD17C43P M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 43V Tolerance: ±6.97% Power - Max: 800mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 33V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,728
GBPC5006M T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC40-M Supplier Device Package: GBPC40-M	패키지: 4-Square, GBPC40-M	재고7,152
TS20P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 20A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,632
TS10P04G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고6,080
GBL10HD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 4A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고2,576
SK55C-V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
RS2KALH	Taiwan Semiconductor Corporation	500NS, 2A, 800V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고84,000
BZS55C27	Taiwan Semiconductor Corporation	1206 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 20 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: -	Request a Quote
TQM250NB06DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/30A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V Power - Max: 2.5W (Ta), 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	패키지: -	재고22,365
ES3JBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000
MBR15150CT-Y	Taiwan Semiconductor Corporation	DIODE ARRAY GP 150V 15A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote
BAV20WS-G	Taiwan Semiconductor Corporation	SOD-323, 200V, 0.5A, SWITCHING D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 150 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote
HERAF1007G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000
TSM180P03CS	Taiwan Semiconductor Corporation	-30V, -10A, SINGLE P-CHANNEL POW FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote
PU4BB	Taiwan Semiconductor Corporation	25NS, 4A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고17,970
BZS55C5V6	Taiwan Semiconductor Corporation	1206 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: -	Request a Quote
SFF1008GA	Taiwan Semiconductor Corporation	DIODE ARRAY GP 600V 10A ITO220AB Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	재고2,940
ES3B-V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
M3Z20VC	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
BAT42-L0-R0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 25 V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote
SF66GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고7,500
TSF30U60C	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 60V 15A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	Request a Quote
1PGSMA4763-R3G	Taiwan Semiconductor Corporation	DIODE ZENER 91V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 91 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote