페이지 115 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M6.8Z B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 1.5 Ohms Current - Reverse Leakage @ Vr: 1mA @ 5.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고7,440
BZD27C12PWHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 3µA @ 9.1V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	패키지: SOD-123W	재고6,448
1SMB5948HR5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 3000MW, 5%, A Voltage - Zener (Nom) (Vz): 91V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 69.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고4,656
BZD27C27PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,152
BZD27C82P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,560
BZD27C36P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1µA @ 27V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,960
1SMB5948HM4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 3000MW, 5%, A Voltage - Zener (Nom) (Vz): 91V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 69.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고6,848
1N4750A R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 27V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 5µA @ 20.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고2,400
BZD17C51P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 39V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,728
MTZJ10SD R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 10.21V, 500MW, %, Voltage - Zener (Nom) (Vz): 10.21V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 200nA @ 7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고3,856
GBPC2508 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고6,544
TS432BCT A3G	Taiwan Semiconductor Corporation	VOLTAGE REFERENCE, PROGRAMMABLE, Reference Type: - Output Type: - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Tolerance: - Temperature Coefficient: - Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,936
BZV55B33	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 33 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 24 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: -	Request a Quote
TSM650N15CS	Taiwan Semiconductor Corporation	150V, 9A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote
PE1DAH	Taiwan Semiconductor Corporation	15NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고44,700
S1GMH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고34,398
1PGSMB5938	Taiwan Semiconductor Corporation	DIODE ZENER 36V 3W DO214AA Voltage - Zener (Nom) (Vz): 36 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 38 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote
SS310LH	Taiwan Semiconductor Corporation	3A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
BZY55B12-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 12V 500MW 0805 Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: -	Request a Quote
PU4BC	Taiwan Semiconductor Corporation	25NS, 4A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고9,000
HS3K-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
HSJLWH	Taiwan Semiconductor Corporation	75NS, 0.8A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
PUUP8DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고52,575
S1KFS-MWG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고46,170
TSM680P06CP	Taiwan Semiconductor Corporation	-60V, -18A, SINGLE P-CHANNEL POW FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
RS1JLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고61,164
1PGSMA4754	Taiwan Semiconductor Corporation	DIODE ZENER 39V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 29.7 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
SR1060H	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 60V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote