페이지 129 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C82P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,704
BZD27C160P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 160V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 162V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 350 Ohms Current - Reverse Leakage @ Vr: 1µA @ 120V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,792
1SMA4754HR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 39V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 39V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 29.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고4,128
BZD17C200P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,176
MMSZ5257B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 33V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 58 Ohms Current - Reverse Leakage @ Vr: 100nA @ 25V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: SOD-123F	재고7,824
UDZS5V6B RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 900nA @ 3V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고3,520
1N5243B A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 500MW, 5%, DO Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 13 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: 100°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고4,144
BZV55B3V3 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.3V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: DO-213AC, MINI-MELF, SOD-80	재고3,600
BZV55C9V1 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 500MW, 5%, M Voltage - Zener (Nom) (Vz): 9.1V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100nA @ 6.8V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: DO-213AC, MINI-MELF, SOD-80	재고7,152
GBPC50005M T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC40-M Supplier Device Package: GBPC40-M	패키지: 4-Square, GBPC40-M	재고2,688
GBPC1506M T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 15A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-M Supplier Device Package: GBPC-M	패키지: 4-Square, GBPC-M	재고5,152
TS1117BCP ROG	Taiwan Semiconductor Corporation	LINEAR REGULATOR, ADJ. VOUT, 1A, Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,296
SF3004PTH	Taiwan Semiconductor Corporation	DIODE ARRAY GP 200V 30A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	패키지: -	재고2,700
TSM048NB06LCR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 16A/107A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5.2x5.75) Package / Case: 8-PowerLDFN	패키지: -	재고21,384
GBL10H	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 4A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote
S15GLW	Taiwan Semiconductor Corporation	1.5A, 400V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고60,000
BZX79B9V1	Taiwan Semiconductor Corporation	DO-35, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 9.1 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 0.5 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: -	Request a Quote
SF2006G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000
SFT11GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
TSG65N068CE-RVG	Taiwan Semiconductor Corporation	650V, 30A, PDFN88, E-MODE GAN TR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고8,895
HS3B-V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
M3Z5V6C-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고9,000
1PGSMB5927-R5G	Taiwan Semiconductor Corporation	DIODE ZENER 12V 3W DO214AA Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 6.5 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	재고708
TSM9ND50CI	Taiwan Semiconductor Corporation	MOSFET N-CH 500V 9A ITO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1116 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	재고11,625
SK110B	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고17,964
SR006H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 500MA DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SR315H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
BZT52C5V6S-R9G	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 900 nA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고30,000