페이지 131 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M12Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 4.5 Ohms Current - Reverse Leakage @ Vr: 1µA @ 9.1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고5,808
BZD27C56P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 56V Tolerance: ±7.14% Power - Max: 1W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 43V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,592
BZD27C180P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 179.5V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,088
BZT55C5V6 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 500MW, 5%, Q Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고7,440
BZV55B9V1 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 9.1V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100nA @ 6.8V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: DO-213AC, MINI-MELF, SOD-80	재고5,312
BZX79C7V5 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.5V, 500MW, 5%, D Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고5,424
GBL08 D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 4A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고2,288
ABS10 REG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: 4-SMD, Gull Wing	재고6,880
TS78L03CX RFG	Taiwan Semiconductor Corporation	IC REG LINEAR 3V 100MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,464
B0520LWF	Taiwan Semiconductor Corporation	SOD-123F, 20V, 0.5A, SCHOTTKY DI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote
TSM22P10CI-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 100V 22A ITO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote
MBRS3045CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 45V 30A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
BZT52C33-G	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 33 V Tolerance: ±5% Power - Max: 350 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
S4MH	Taiwan Semiconductor Corporation	4A, 1000V, STANDARD RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,970
ES1DFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고105,000
RS2DA	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고45,000
TS432ACX	Taiwan Semiconductor Corporation	1.24 SHUNT VOLTAGE REGULATOR Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 1.24V Voltage - Output (Max): 18 V Current - Output: 12 mA Tolerance: ±0.5% Temperature Coefficient: 50ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 65 µA Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
DBL155G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 1.5A DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000
RS3GB-T	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고12
TSM060NB06LCZ-C0G	Taiwan Semiconductor Corporation	60V, 111A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 111A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6273 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: -	재고11,985
M3Z62VC-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 47 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고9,000
BZX84C39	Taiwan Semiconductor Corporation	SOT-23, 300MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±5.13% Power - Max: 300 mW Impedance (Max) (Zzt): 130 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
SD103BW	Taiwan Semiconductor Corporation	SOD-123, 30V, 0.35A, SCHOTTKY DI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 30 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote
SR102	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
1PGSMA4758H	Taiwan Semiconductor Corporation	DIODE ZENER 56V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 56 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 110 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 42.6 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
TS15P07G-K-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 15A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	Request a Quote
TSM4NB60CP	Taiwan Semiconductor Corporation	600V, 4A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
1PGSMB5940-R5G	Taiwan Semiconductor Corporation	DIODE ZENER 43V 3W DO214AA Voltage - Zener (Nom) (Vz): 43 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 53 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote