Taiwan Semiconductor Corporation 제품

2M200Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 2000MW, %, D

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 152V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

2M150Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 2000MW, %, D

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 575 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 114V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

BZD27C6V8P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5.88%
• Power - Max: 1W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

BZD27C11PHMQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5.45%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

1SMB5953HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 3000MW, 5%,

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 600 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 114V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

1N4741A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

MTZJ30SB R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 28.42V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 28.42V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

패키지: DO-204AG, DO-34, Axial

BZT55C12 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 500MW, 5%, QM

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

패키지: SOD-80 Variant

BZV55B3V9 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.9V, 500MW, 2%, M

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

패키지: DO-213AC, MINI-MELF, SOD-80

RDBLS207GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 2A, 1000

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Current - Reverse Leakage @ Vr: 2µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

패키지: 4-SMD, Gull Wing

MBR15100CT-Y

Taiwan Semiconductor Corporation

DIODE ARRAY GP 100V 15A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: -

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BZV55B27

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 20 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

패키지: -

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2M14Z

Taiwan Semiconductor Corporation

DIODE ZENER 14V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 14 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 10.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: -

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BZT52C20-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 350 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 14 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: -

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S1DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

S12MC-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 12A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

RS1AH

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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SK110BH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

1PGSMB5940

Taiwan Semiconductor Corporation

DIODE ZENER 43V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 53 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: -

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1SMC5352

Taiwan Semiconductor Corporation

DIODE ZENER 15V 5W DO214AB

• Voltage - Zener (Nom) (Vz): 15 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

패키지: -

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MBRF3060CT-Y

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 60V 30A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

패키지: -

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M3Z22VC

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 17 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: -

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SFF10L08GA

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 5A ITO220AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

패키지: -

SR003

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 500MA DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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1PGSMC5359

Taiwan Semiconductor Corporation

DO-214AB (SMC), 5000MW, 5%, ZENE

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

패키지: -

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SK515C

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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KBU802G-T0G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 100V 8A KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

패키지: -

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MBRF20100CT-Y

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

패키지: -

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