페이지 56 - Taiwan Semiconductor Corporation 제품 | Heisener Electronics
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Taiwan Semiconductor Corporation 제품

기록 4,299
페이지  56/154
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2M75ZHA0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 2000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 75V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 56V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
패키지: DO-204AC, DO-15, Axial
재고4,896
BZD27C16PHRVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 16.2V
  • Tolerance: ±5.55%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 12V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고2,400
BZD27C36P MTG
Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 36V
  • Tolerance: ±5.55%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 27V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고5,200
1SMA5945 M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1500MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 120 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 51.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: DO-214AC, SMA
재고3,264
1M150Z R1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 150V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 1000 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 114V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,896
1N4754G R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 200°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고5,648
TS6K40 D3G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: TS4K
패키지: 4-SIP, GBL
재고2,768
TS5213CX533 RFG
Taiwan Semiconductor Corporation

IC REG LINEAR 3.3V 80MA

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 80mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,416
HS1B
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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RS2KFSH
Taiwan Semiconductor Corporation

500NS, 2A, 800V, FAST RECOVERY R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고84,000
MTZJ39SG
Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 39.87 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
패키지: -
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BZD27C15PH
Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 14.7 V
  • Tolerance: ±6.12%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 11 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
패키지: -
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TSM900N06CP
Taiwan Semiconductor Corporation

60V, 11A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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TSF20U45C
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 45V 10A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 45 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: -
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BZD27C75PW
Taiwan Semiconductor Corporation

DIODE ZENER 75V 1W SOD123W

  • Voltage - Zener (Nom) (Vz): 75 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 56 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
패키지: -
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BC817-25
Taiwan Semiconductor Corporation

SOT-23, 50V, 0.5A, NPN BIPOLAR T

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: -
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SS34LW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
재고151,095
BZX55B24
Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 18 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
패키지: -
Request a Quote
BZT52C12S-R9G
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 90 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
패키지: -
재고30,000
MBRF30L60CT-C0
Taiwan Semiconductor Corporation

DIODE

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
HS5A-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,927
HER1008G
Taiwan Semiconductor Corporation

DIODE ARRAY GP 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
재고3,000
TST10H120CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 5A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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1N4749AH
Taiwan Semiconductor Corporation

DIODE ZENER 24V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: -
Request a Quote
1N4762AH
Taiwan Semiconductor Corporation

DIODE ZENER 82V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 82 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 62.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: -
Request a Quote
1SMA4761H
Taiwan Semiconductor Corporation

DIODE ZENER 75V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 75 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 175 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 56 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: -
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TST30H120CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 15A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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TPUH6JH
Taiwan Semiconductor Corporation

25NS, 6A, 600V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
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