페이지 59 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C7V5P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.5V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 7.45V Tolerance: ±6.04% Power - Max: 1W Impedance (Max) (Zzt): 2 Ohms Current - Reverse Leakage @ Vr: 50µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,608
BZD27C20P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 20V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,840
1SMB5951 R5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 120V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 120V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 360 Ohms Current - Reverse Leakage @ Vr: 1µA @ 91.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고2,736
BZD27C82P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,304
1SMB5931HM4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 3000MW, 5%, A Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 12 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고6,016
BZD17C24P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5.83% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 18V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고6,112
1SMA5946 M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 1500MW, 5%, D Voltage - Zener (Nom) (Vz): 75V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 140 Ohms Current - Reverse Leakage @ Vr: 500nA @ 56V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고5,344
BZD17C27P RQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,392
1M160ZHR1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 160V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 160V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 1100 Ohms Current - Reverse Leakage @ Vr: 5µA @ 121.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고7,008
BZT52B36-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 410MW, 2%, SO Voltage - Zener (Nom) (Vz): 36V Tolerance: ±2% Power - Max: 410mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 100nA @ 25.2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고3,472
BZT52C5V1S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 200MW, 5%, S Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1.8µA @ 2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고6,832
TS15P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 15A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고7,776
TST40L60CW	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 60V 40A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 40A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote
MUR360SH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고9,000
BZS55C24	Taiwan Semiconductor Corporation	1206 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 18 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: -	Request a Quote
HS1GFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고21,000
BZX584B68-RSG	Taiwan Semiconductor Corporation	SOD-523F, 150MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±2% Power - Max: 150 mW Impedance (Max) (Zzt): 240 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 52 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: -	재고24,000
PU3BAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 47pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고19,290
RS3MH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000
1PGSMB5933	Taiwan Semiconductor Corporation	DIODE ZENER 22V 3W DO214AA Voltage - Zener (Nom) (Vz): 22 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 17.5 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote
SS310H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고7,518
TS19371CX6	Taiwan Semiconductor Corporation	BOOST (STEP-UP) WLED DRIVER WITH Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 18V Voltage - Output: - Current - Output / Channel: 650mA (Switch) Frequency: 1.2MHz Dimming: Analog, PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: -	Request a Quote
GBPC5004M	Taiwan Semiconductor Corporation	50A, 400V, STANDARD BRIDGE RECTI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: -	재고582
TST30L120CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 15A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
ESH2D	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고17,901
BZD17C68P	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5.88% Power - Max: 800 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 51 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	패키지: -	Request a Quote
HS5B-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,331
HS3KH	Taiwan Semiconductor Corporation	75NS, 3A, 800V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000