페이지 84 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M82Z A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 82V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 500nA @ 62.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고3,088
2M110Z A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 110V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 110V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 500nA @ 83.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고6,544
BZD27C180PHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 179.5V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,024
BZD27C200P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고6,208
BZD27C22PHRQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 22V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 22.05V Tolerance: ±5.66% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 16V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,536
1N4760A R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 5µA @ 51.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고5,824
1SMA5938HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 1500MW, 5%, A Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 38 Ohms Current - Reverse Leakage @ Vr: 500nA @ 27.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고7,552
1N4729G R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.6V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 3.6V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고2,720
BZT52B3V0S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3V, 200MW, 2%, SOD Voltage - Zener (Nom) (Vz): 3V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 9µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고7,376
BZT52C6V8-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 350MW, 5%, S Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 2µA @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고7,184
BZY55C2V4 RYG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.4V, 500MW, 5%, 0 Voltage - Zener (Nom) (Vz): 2.4V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: 0805 (2012 Metric)	재고4,320
DBLS151GHRDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고4,656
MBS8HRCG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 0.8A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	패키지: 4-BESOP (0.173", 4.40mm Width)	재고3,264
TPC816C C9G	Taiwan Semiconductor Corporation	OPTOISO 5KV TRANS 4DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): - Rise / Fall Time (Typ): 4µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 70V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 200mV Operating Temperature: -30°C ~ 100°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,246
SK520CH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,370
HS15KLWH	Taiwan Semiconductor Corporation	75NS, 1.5A, 800V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
TSM480P06CI-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 60V 20A ITO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote
ES1DFL	Taiwan Semiconductor Corporation	35NS, 1A, 200V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고27,840
RB751V-40WS	Taiwan Semiconductor Corporation	SOD-323F, 40V, 0.03A, SCHOTTKY D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -40°C ~ 125°C	패키지: -	Request a Quote
1SMA5949	Taiwan Semiconductor Corporation	DIODE ZENER 100V 1.5W DO214AC Voltage - Zener (Nom) (Vz): 100 V Tolerance: ±5% Power - Max: 1.5 W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 76 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
TSM2NB60CP	Taiwan Semiconductor Corporation	600V, 2A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
TSM6866SDCA	Taiwan Semiconductor Corporation	MOSFET 2N-CH 20V 6A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 0.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Power - Max: 1.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote
MMSZ4681-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 2.4 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
BAT54AW-RFG	Taiwan Semiconductor Corporation	SOT-323, 30V, 0.2A, SCHOTTKY DIO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C	패키지: -	재고9,000
SR304	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
1PGSMC5367HR7G	Taiwan Semiconductor Corporation	DIODE ZENER 43V 5W DO214AB Voltage - Zener (Nom) (Vz): 43 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	패키지: -	Request a Quote
TSSA3U45H	Taiwan Semiconductor Corporation	3A, 45V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,985
1SMB5932	Taiwan Semiconductor Corporation	DIODE ZENER 20V 3W DO214AA Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 14 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote