페이지 87 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD17C200P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,296
BZD27C200P RQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,088
ZM4746A L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, 5%, M Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 5µA @ 13.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	패키지: DO-213AB, MELF	재고7,440
1N4735G R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.2V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 2 Ohms Current - Reverse Leakage @ Vr: 10µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고5,760
BZT55B56 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 500MW, 2%, QM Voltage - Zener (Nom) (Vz): 56V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 135 Ohms Current - Reverse Leakage @ Vr: 100nA @ 42V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고5,984
UDZS33B RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 33V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 45nA @ 25V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고3,552
MTZJ3V0SB R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.12V, 500MW, %, D Voltage - Zener (Nom) (Vz): 3.12V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 120 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고5,632
RMB6SHRCG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, FAST, 0.8A, 60 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	패키지: 4-BESOP (0.173", 4.40mm Width)	재고6,144
TS9013SCY RMG	Taiwan Semiconductor Corporation	IC REG LINEAR 3.3V 500MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,600
TS5204CQ33 RFG	Taiwan Semiconductor Corporation	IC REG LINEAR 3.3V 80MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 80mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,480
BZV55B3V0	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 3 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 4 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: -	Request a Quote
SS210ALH	Taiwan Semiconductor Corporation	2A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 61pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
HS15DLWH	Taiwan Semiconductor Corporation	50NS, 1.5A, 200V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
SFS1608G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,800
2M24ZH	Taiwan Semiconductor Corporation	DIODE ZENER 24V 2W DO204AC Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 2 W Impedance (Max) (Zzt): 13 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: -	Request a Quote
MMSZ4700-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 13 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 1 µA @ 9.8 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
S1KLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
BC848A	Taiwan Semiconductor Corporation	SOT-23, 30V, 0.1A, NPN BIPOLAR T Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
2M91ZH	Taiwan Semiconductor Corporation	DIODE ZENER 91V 2W DO204AC Voltage - Zener (Nom) (Vz): 91 V Tolerance: ±5% Power - Max: 2 W Impedance (Max) (Zzt): 125 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 69.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: -	Request a Quote
HS15KLW	Taiwan Semiconductor Corporation	75NS, 1.5A, 800V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
BZD27C200PW	Taiwan Semiconductor Corporation	DIODE ZENER 200V 1W SOD123W Voltage - Zener (Nom) (Vz): 200 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	패키지: -	재고8,970
ES1GL	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고83,724
S1DLSH	Taiwan Semiconductor Corporation	1.2A, 200V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고60,000
TSD2JFSH	Taiwan Semiconductor Corporation	2A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote
SK59C-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
TSM2538CQ-RFG	Taiwan Semiconductor Corporation	MOSFET N/P-CH 20V 5.5A/10A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V Power - Max: 1.89W (Ta), 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	패키지: -	재고35,670
MBRS1545CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 45V 15A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
SRAF520H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote