Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

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TK10A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고4,192
TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고5,184
TK31V60W5,LVQ
Toshiba Semiconductor and Storage

MOSFET N -CH 600V 30.8A DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
패키지: 4-VSFN Exposed Pad
재고19,758
2SA1832-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고3,504
2SC4116-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A USM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고139,338
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고5,328
1SV239TPH3F
Toshiba Semiconductor and Storage

DIODE VARACTOR 15V USC

  • Capacitance @ Vr, F: 2pF @ 10V, 1MHz
  • Capacitance Ratio: 2.4
  • Capacitance Ratio Condition: C2/C10
  • Voltage - Peak Reverse (Max): 15V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
패키지: SC-76, SOD-323
재고142,524
TH58NYG3S0HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고7,536
TC74LCX157FTELM
Toshiba Semiconductor and Storage

IC MULTIPLEXER QUAD 2-CH 16TSSOP

  • Type: Multiplexer
  • Circuit: 4 x 2:1
  • Independent Circuits: 1
  • Current - Output High, Low: 24mA, 24mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고5,104
TC4001BF(EL,N,F)
Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14SOP

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 3 V ~ 18 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Logic Level - Low: 1.5 V ~ 4 V
  • Logic Level - High: 3.5 V ~ 11 V
  • Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOP
  • Package / Case: 14-SOIC (0.209", 5.30mm Width)
패키지: 14-SOIC (0.209", 5.30mm Width)
재고19,056
TC75S56F,LF
Toshiba Semiconductor and Storage

IC C0MP GP CMOS PUSH-PULL SMV

  • Type: General Purpose
  • Number of Elements: 1
  • Output Type: Push-Pull
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Voltage - Input Offset (Max): 1mV @ 5V
  • Current - Input Bias (Max): 1pA @ 5V
  • Current - Output (Typ): 25mA
  • Current - Quiescent (Max): 22µA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): 680ns
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: SC-74A, SOT-753
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고25,074
TODX2350A(F)
Toshiba Semiconductor and Storage

TXRX MOD OPTICAL 10MBPS 650NM

  • Data Rate: 10Mbps
  • Wavelength: 650nm
  • Applications: General Purpose
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Connector Type: JIS F07
  • Mounting Type: Through Hole
패키지: -
재고6,048
TC35667FSG-006(EL)
Toshiba Semiconductor and Storage

BLUETOOTH V4.1 LOW ENERGY STANDA

  • Type: -
  • RF Family/Standard: -
  • Protocol: -
  • Modulation: -
  • Frequency: -
  • Data Rate (Max): -
  • Power - Output: -
  • Sensitivity: -
  • Memory Size: -
  • Serial Interfaces: -
  • GPIO: -
  • Voltage - Supply: -
  • Current - Receiving: -
  • Current - Transmitting: -
  • Operating Temperature: -
  • Package / Case: 40-VFQFN Exposed Pad
패키지: 40-VFQFN Exposed Pad
재고4,428
TLP3542(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 100 mOhm
  • Load Current: 2.5A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
  • Supplier Device Package: 6-DIP (Cut), 5 Lead
  • Relay Type: Relay
패키지: 6-DIP (0.300", 7.62mm), 5 Leads
재고26,556
TLP2161(TP,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

  • Number of Channels: 2
  • Inputs - Side 1/Side 2: 2/0
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Push-Pull, Totem Pole
  • Current - Output / Channel: 10mA
  • Data Rate: 15MBd
  • Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
  • Rise / Fall Time (Typ): 3ns, 3ns
  • Voltage - Forward (Vf) (Typ): 1.5V
  • Current - DC Forward (If) (Max): 10mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고148,584
TBD62381AFWG,EL
Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 8:8
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 0 ~ 50 V
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Current - Output (Max): 500mA
  • Rds On (Typ): 1 Ohm
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOP
패키지: 18-SOIC (0.295", 7.50mm Width)
재고16,608
TLP7920(D4-A,F
Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: 5.5nA
  • Voltage - Input Offset: 730µV
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고6,992
7UL1G126FS,LF
Toshiba Semiconductor and Storage

X34 L-MOS LVP SERIES BUFFER 3-ST

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 0.9V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-953
  • Supplier Device Package: fSV
패키지: SOT-953
재고203,868
TCR2LN095,LF
Toshiba Semiconductor and Storage

200MA LDO VOUT=0.95V DROPOUT=200

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.95V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.46V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: 4-XFDFN Exposed Pad
재고4,640
TCR2LF13,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT1.3V DROPOUT220MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,960
CMZ20-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE ZENER 20V 2W MFLAT

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±10%
  • Power - Max: 2 W
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 14 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
패키지: -
재고8,700
RN2104-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고15,507
TCR3UF18B-LM-CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.464V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680 nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: -
Request a Quote
RN2905FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: -
재고22,500
ULN2004AFWG-N-E
Toshiba Semiconductor and Storage

IC PWR RELAY 7NPN 1:1 16SOL

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOL
패키지: -
Request a Quote
TCKE800NA-RF
Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

  • Function: Electronic Fuse
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: 4.4V ~ 18V
  • Current - Output: 5A
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-WSONB (3x3)
패키지: -
재고121,023
CRY62-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE ZENER 6.2V 700MW SFLAT

  • Voltage - Zener (Nom) (Vz): 6.2 V
  • Tolerance: ±9.68%
  • Power - Max: 700 mW
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 3 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
패키지: -
재고7,800
TK55S10N1-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고29,772