페이지 100 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
TK14G65W,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고14,532
TPN22006NH,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 60V 9A 8-TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고3,328
SSM6K504NU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 9A UDFN6B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	패키지: 6-WDFN Exposed Pad	재고27,780
2SA1931,Q(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고7,168
HN1C01FE-Y,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: SOT-563, SOT-666	재고35,664
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	패키지: L-FLAT?	재고3,360
CUS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 125°C	패키지: SC-76, SOD-323	재고2,464
CUS551V30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	패키지: SC-76, SOD-323	재고4,528
1SS417CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, Flat Lead	재고3,536
TCR2EN13,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.3V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	패키지: 4-XFDFN Exposed Pad	재고79,500
TCR2EE33,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 3.3V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	패키지: SOT-553	재고35,394
TC58NVG2S0HTA00	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고39,720
TC7SPN334L6X,LF	Toshiba Semiconductor and Storage	IC BUS BUFFER 1CH 250MW MP6C Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Input Signal: - Output Signal: - Output Type: Non-Inverted Data Rate: - Operating Temperature: -40°C ~ 85°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: 6-MP6C (1.45x1.0)	패키지: 6-UFDFN	재고51,960
TC74VHC32FTELM	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-TSSOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	패키지: 14-TSSOP (0.173", 4.40mm Width)	재고6,816
TC7WH08FK,LJ(CT	Toshiba Semiconductor and Storage	IC GATE AND 2CH 2-INP US8 Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	패키지: 8-VFSOP (0.091", 2.30mm Width)	재고136,020
TC74VHCT244AFTEL	Toshiba Semiconductor and Storage	IC BUFF/DVR TRI-ST DUAL 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고7,024
TLP3107(TP,F	Toshiba Semiconductor and Storage	IC PHOTORELAY MOSFET 6-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 60 mOhm Load Current: 3.3A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	패키지: 6-SOP (0.173", 4.40mm)	재고6,948
TLP222A-2(LF1,F)	Toshiba Semiconductor and Storage	OPTO RELAY 2CH 8SMD Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 500mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: 8-SMD Relay Type: Relay	패키지: 8-SMD (0.300", 7.62mm)	재고25,746
TLP630(GB,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	패키지: 6-DIP (0.300", 7.62mm)	재고16,932
TCR8BM11A,L3F	Toshiba Semiconductor and Storage	IC REG LIN 1.1V 800MA 5DFNB Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.245V @ 800mA Current - Output: 800mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	패키지: 4-XDFN Exposed Pad	재고37,050
HN1D01FU-LF-T	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA US6 Diode Configuration: 2 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고351
CRS30I40A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	패키지: -	재고14,064
TK110Z65Z-S1F	Toshiba Semiconductor and Storage	POWER MOSFET TRANSISTOR TO-247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.02mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(T) Package / Case: TO-247-4	패키지: -	재고21
RN1118MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	패키지: -	Request a Quote
TJ90S04M3L-LQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고504
TK10A50W-S5X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	패키지: -	재고414
2SA1832-GR-LXHF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 120 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	Request a Quote
TPCP8407-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 5A/4A PS-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Power - Max: 690mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	패키지: -	재고9,984

TK14G65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고14,532

TPN22006NH,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 60V 9A 8-TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고3,328

SSM6K504NU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 9A UDFN6B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

패키지: 6-WDFN Exposed Pad

재고27,780

2SA1931,Q(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고7,168

HN1C01FE-Y,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: SOT-563, SOT-666

재고35,664

CLS01(T6LSONY,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 530pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

패키지: L-FLAT?

재고3,360

CUS01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 125°C

패키지: SC-76, SOD-323

재고2,464

CUS551V30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

패키지: SC-76, SOD-323

재고4,528

1SS417CT,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA FSC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, Flat Lead

재고3,536

TCR2EN13,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.3V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

패키지: 4-XFDFN Exposed Pad

재고79,500

TCR2EE33,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

패키지: SOT-553

재고35,394

TC58NVG2S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고39,720

TC7SPN334L6X,LF

Toshiba Semiconductor and Storage

IC BUS BUFFER 1CH 250MW MP6C

Translator Type: Voltage Level
Channel Type: Unidirectional
Number of Circuits: 1
Channels per Circuit: 1
Voltage - VCCA: 1.1V ~ 2.7V
Voltage - VCCB: 1.65V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Non-Inverted
Data Rate: -
Operating Temperature: -40°C ~ 85°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Supplier Device Package: 6-MP6C (1.45x1.0)

패키지: 6-UFDFN

재고51,960

TC74VHC32FTELM

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

재고6,816

TC7WH08FK,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 2CH 2-INP US8

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

패키지: 8-VFSOP (0.091", 2.30mm Width)

재고136,020

TC74VHCT244AFTEL

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고7,024

TLP3107(TP,F

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 6-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 60 mOhm
Load Current: 3.3A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

패키지: 6-SOP (0.173", 4.40mm)

재고6,948

TLP222A-2(LF1,F)

Toshiba Semiconductor and Storage

OPTO RELAY 2CH 8SMD

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 500mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SMD (0.300", 7.62mm)
Supplier Device Package: 8-SMD
Relay Type: Relay

패키지: 8-SMD (0.300", 7.62mm)

재고25,746

TLP630(GB,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV TRANS W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor with Base
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

패키지: 6-DIP (0.300", 7.62mm)

재고16,932

TCR8BM11A,L3F

Toshiba Semiconductor and Storage

IC REG LIN 1.1V 800MA 5DFNB

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.245V @ 800mA
Current - Output: 800mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

패키지: 4-XDFN Exposed Pad

재고37,050

HN1D01FU-LF-T

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA US6

Diode Configuration: 2 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고351

CRS30I40A-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고14,064

TK110Z65Z-S1F

Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(T)
Package / Case: TO-247-4

패키지: -

재고21

RN1118MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

패키지: -

Request a Quote

TJ90S04M3L-LQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고504

TK10A50W-S5X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

패키지: -

재고414

2SA1832-GR-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 120 mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

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TPCP8407-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Power - Max: 690mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

패키지: -

재고9,984