페이지 135 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
TK19A45D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 19A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고3,200
TJ30S06M3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 30A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,296
SSM6J505NU,LF	Toshiba Semiconductor and Storage	MOSFET P CH 12V 12A UDFN6B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	패키지: 6-WDFN Exposed Pad	재고45,756
TK31N60W5,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: TO-247-3	재고6,648
2SC5930(TPF2,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	패키지: SC-71	재고3,296
2SA1873-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A USV Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: 5-TSSOP, SC-70-5, SOT-353	재고23,976
RN49A1(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,104
TA78L005AP,F(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	패키지: TO-226-3, TO-92-3 Long Body	재고2,656
TA76431AS(T6SOY,AF	Toshiba Semiconductor and Storage	IC REG LINEAR 100MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	패키지: TO-226-3, TO-92-3 Long Body	재고5,536
TCR3DM30,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3V 300MA 4DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 65µA ~ 78µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	패키지: 4-UDFN Exposed Pad	재고6,912
TCR2LF10,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	패키지: SC-74A, SOT-753	재고5,824
TC58BVG2S0HBAI4	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 63FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	패키지: 63-VFBGA	재고4,480
TC7SPN3125CFC(T5L)	Toshiba Semiconductor and Storage	DUAL SUPPLY BUS BUFFER UNI CST6C Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Input Signal: - Output Signal: - Output Type: Tri-State, Non-Inverted Data Rate: - Operating Temperature: -40°C ~ 85°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: CST6C	패키지: 6-XFDFN Exposed Pad	재고6,880
TC74HC86APF	Toshiba Semiconductor and Storage	IC GATE XOR 4CH 2-INP 14-DIP Logic Type: XOR (Exclusive OR) Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Supplier Device Package: 14-DIP Package / Case: 14-DIP (0.300", 7.62mm)	패키지: 14-DIP (0.300", 7.62mm)	재고2,864
TC7SZ34AFS,L3F	Toshiba Semiconductor and Storage	IC BUFFER UHS SGL FSV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-953 Supplier Device Package: fSV	패키지: SOT-953	재고3,088
74VHCT540AFT(BE)	Toshiba Semiconductor and Storage	IC INVERTER 8-INPUT 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고6,752
TLP3062(S,C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRIAC 6DIP 5L Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 600µA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP (Cut), 5 Lead Approvals: BSI, SEMKO, UR	패키지: 6-DIP (0.300", 7.62mm), 5 Leads	재고13,344
TLP525G-2(F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRIAC 8DIP Output Type: Triac Zero Crossing Circuit: No Number of Channels: 2 Voltage - Isolation: 2500Vrms Voltage - Off State: 400V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 80mA Current - Hold (Ih): 200µA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Approvals: UR	패키지: 8-DIP (0.300", 7.62mm)	재고26,580
TLP185(GRH-TL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	패키지: 6-SMD (4 Leads), Gull Wing	재고57,168
74LCX574FT	Toshiba Semiconductor and Storage	IC FF D-TYPE SNGL 8BIT 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150MHz Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Iq): 10µA Input Capacitance: 7pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	패키지: 20-TSSOP (0.173", 4.40mm Width)	재고6,272
TCR2LF285,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT2.85V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,376
TC7W32FU-TE12L	Toshiba Semiconductor and Storage	IC GATE OR 2CH 2-INP SM8 Logic Type: OR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5V ~ 1.8V Logic Level - High: 1.5V ~ 4.2V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	패키지: -	Request a Quote
TPH3R10AQM-LQ	Toshiba Semiconductor and Storage	100V U-MOS X-H SOP-ADVANCE(N) 3. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	패키지: -	재고15,069
RN2311-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	재고17,940
RN4907FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고24,000
RN2403-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: -	재고18,000
RN2906-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고8,700
7UL2T08FK-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	패키지: -	Request a Quote

TK19A45D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 19A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고3,200

TJ30S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 15A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,296

SSM6J505NU,LF

Toshiba Semiconductor and Storage

MOSFET P CH 12V 12A UDFN6B

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
Vgs (Max): ±6V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

패키지: 6-WDFN Exposed Pad

재고45,756

TK31N60W5,S1VF

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 15.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: TO-247-3

재고6,648

2SC5930(TPF2,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

패키지: SC-71

재고3,296

2SA1873-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A USV

Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: 5-TSSOP, SC-70-5, SOT-353

재고23,976

RN49A1(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,104

TA78L005AP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

재고2,656

TA76431AS(T6SOY,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 100mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

재고5,536

TCR3DM30,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA 4DFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 65µA ~ 78µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

패키지: 4-UDFN Exposed Pad

재고6,912

TCR2LF10,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

패키지: SC-74A, SOT-753

재고5,824

TC58BVG2S0HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 63FBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-TFBGA (9x11)

패키지: 63-VFBGA

재고4,480

TC7SPN3125CFC(T5L)

Toshiba Semiconductor and Storage

DUAL SUPPLY BUS BUFFER UNI CST6C

Translator Type: Voltage Level
Channel Type: Unidirectional
Number of Circuits: 1
Channels per Circuit: 1
Voltage - VCCA: 1.1V ~ 2.7V
Voltage - VCCB: 1.65V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Tri-State, Non-Inverted
Data Rate: -
Operating Temperature: -40°C ~ 85°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: CST6C

패키지: 6-XFDFN Exposed Pad

재고6,880

TC74HC86APF

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-DIP

Logic Type: XOR (Exclusive OR)
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Supplier Device Package: 14-DIP
Package / Case: 14-DIP (0.300", 7.62mm)

패키지: 14-DIP (0.300", 7.62mm)

재고2,864

TC7SZ34AFS,L3F

Toshiba Semiconductor and Storage

IC BUFFER UHS SGL FSV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: fSV

패키지: SOT-953

재고3,088

74VHCT540AFT(BE)

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고6,752

TLP3062(S,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

Output Type: Triac
Zero Crossing Circuit: Yes
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 100mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP (Cut), 5 Lead
Approvals: BSI, SEMKO, UR

패키지: 6-DIP (0.300", 7.62mm), 5 Leads

재고13,344

TLP525G-2(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 8DIP

Output Type: Triac
Zero Crossing Circuit: No
Number of Channels: 2
Voltage - Isolation: 2500Vrms
Voltage - Off State: 400V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 80mA
Current - Hold (Ih): 200µA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Approvals: UR

패키지: 8-DIP (0.300", 7.62mm)

재고26,580

TLP185(GRH-TL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

패키지: 6-SMD (4 Leads), Gull Wing

재고57,168

74LCX574FT

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150MHz
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Iq): 10µA
Input Capacitance: 7pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

패키지: 20-TSSOP (0.173", 4.40mm Width)

재고6,272

TCR2LF285,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.85V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,376

TC7W32FU-TE12L

Toshiba Semiconductor and Storage

IC GATE OR 2CH 2-INP SM8

Logic Type: OR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

패키지: -

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TPH3R10AQM-LQ

Toshiba Semiconductor and Storage

100V U-MOS X-H SOP-ADVANCE(N) 3.

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5.75)
Package / Case: 8-PowerTDFN

패키지: -

재고15,069

RN2311-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

재고17,940

RN4907FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고24,000

RN2403-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: -

재고18,000

RN2906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고8,700

7UL2T08FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

패키지: -

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