Toshiba Semiconductor and Storage 제품

2SK2962,T6WNLF(J

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

패키지: TO-226-3, TO-92-3 Long Body

TK13A65U(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

TPH6400ENH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 200V 21A 8-SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 64 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

2SC1627A-O,PASF(M

Toshiba Semiconductor and Storage

TRANS NPN 400MA 80V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 400mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

RN1309(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

패키지: SC-70, SOT-323

RN2507(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

패키지: SC-74A, SOT-753

TA48L025F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 150MA PWMINI

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 800µA ~ 5mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI (SOT-89)

패키지: TO-243AA

TA48S09AF(T6L1,Q)

Toshiba Semiconductor and Storage

IC REG LINEAR 9V 1A 5HSIP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.69V @ 1A (Typ)
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 55dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: 5-HSIP

패키지: TO-252-6, DPak (5 Leads + Tab)

TB6552FTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16WQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM, Serial
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 13.5 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-WQFN (3x3)

패키지: 16-WFQFN Exposed Pad

TH58BVG3S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

TC74VCX157FTEL

Toshiba Semiconductor and Storage

IC MULTIPLEXER 1 X 2:1 16TSSOP

• Type: Multiplexer
• Circuit: 1 x 2:1
• Independent Circuits: 4
• Current - Output High, Low: 24mA, 24mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

TC7WZ00FK,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND DUAL 2 IN US8

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

패키지: 8-VFSOP (0.091", 2.30mm Width)

TC74HC574APF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20DIP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 59MHz
• Max Propagation Delay @ V, Max CL: 33ns @ 6V, 150pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 20-DIP (0.300", 7.62mm)

패키지: 20-DIP (0.300", 7.62mm)

TC74VHC4040F(E,K,F

Toshiba Semiconductor and Storage

IC COUNTER BIN 12 STAGE 16SOP

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 1
• Number of Bits per Element: 12
• Reset: Asynchronous
• Timing: -
• Count Rate: 125MHz
• Trigger Type: Negative Edge
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 16-SOP

패키지: 16-SOIC (0.209", 5.30mm Width)

DF5A6.2FU(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 3VWM USV

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3V
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 55pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

패키지: 5-TSSOP, SC-70-5, SOT-353

DF5A5.6FUTE85LF

Toshiba Semiconductor and Storage

TVS DIODE 2.5VWM USV

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 2.5V
• Voltage - Breakdown (Min): 5.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 65pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

패키지: 5-TSSOP, SC-70-5, SOT-353

TLP3043(S,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

• Output Type: Triac
• Zero Crossing Circuit: Yes
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Voltage - Off State: 400V
• Static dV/dt (Min): 200V/µs
• Current - LED Trigger (Ift) (Max): 5mA
• Current - On State (It (RMS)) (Max): 100mA
• Current - Hold (Ih): 600µA (Typ)
• Turn On Time: -
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
• Supplier Device Package: 6-DIP (Cut), 5 Lead
• Approvals: BSI, SEMKO, UR

패키지: 6-DIP (0.300", 7.62mm), 5 Leads

TC7WPB9306FK,LF(CT

Toshiba Semiconductor and Storage

X34 PB-F CMOS BUS SWITCHES (DUAL

• Type: Bus Bar - Central
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

패키지: 8-VFSOP (0.091", 2.30mm Width)

TBD62381AFNG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 8:8
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 0 ~ 50 V
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Current - Output (Max): 500mA
• Rds On (Typ): 1 Ohm
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 18-LSOP (0.173", 4.40mm Width)
• Supplier Device Package: 18-SSOP

패키지: 18-LSOP (0.173", 4.40mm Width)

TCR3UG33A,LF

Toshiba Semiconductor and Storage

IC REG LIN 3.3V 300MA 4WCSP-F

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.273V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Thermal Shutdown
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP-F (0.65x0.65)

패키지: 4-XFBGA, WLCSP

TC7MPB9326FK(EL)

Toshiba Semiconductor and Storage

X34 DUAL-SUPPLY LEVEL SHIFT SPDT

• Type: Bus Switch
• Circuit: 2 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 14-VSSOP

패키지: 14-VFSOP (0.118", 3.00mm Width)

TJ90S04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

TAR5S25U-TE85L-F

Toshiba Semiconductor and Storage

UFV POINT DDRULATOR (LF) VOUT: 2

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.2V @ 50mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 850 µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Flat Lead
• Supplier Device Package: UFV

패키지: -

TB67H450AFNG-EL

Toshiba Semiconductor and Storage

IC BRUSHED MOTOR DRVR 8TSSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: -
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.5V ~ 44V
• Voltage - Load: 4.5V ~ 44V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HSOP

패키지: -

TB67S580FNG-EL

Toshiba Semiconductor and Storage

STEPPING MOTOR CONTROL DRIVER IC

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: On/Off
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
• Applications: General Purpose
• Current - Output: 1.6A
• Voltage - Supply: 8.2V ~ 44V
• Voltage - Load: 8.2V ~ 44V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 28-HTSSOP

패키지: -

2SA1162-GR-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 200 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

패키지: -

TK200F04N1L-LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 200A TO220SM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220SM(W)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

SSM3K361TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A UFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Lead

패키지: -