페이지 45 - Toshiba Semiconductor and Storage 제품

부품 번호	제조업체	설명	패키지	재고
TPC8042(TE12L,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 18A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	패키지: 8-SOIC (0.173", 4.40mm Width)	재고2,368
TK6A45DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 450V 5.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고4,224
TK380P60Y,RQ	Toshiba Semiconductor and Storage	MOSFET TRANSISTOR DPAK(OS) PD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 360µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고32,502
TPH1R005PL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 45V 150A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 22.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.04 mOhm @ 50A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고6,512
SSM6N56FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.8A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: SOT-563, SOT-666	재고34,896
2SC6040,T2Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 800V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	패키지: SC-71	재고4,784
2SC2655-O(ND1,AF)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고4,592
2SA1837,HFEYHF(M	Toshiba Semiconductor and Storage	TRANS PNP 1A 230V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고2,832
2SC2712-OTE85LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	패키지: TO-236-3, SC-59, SOT-23-3	재고21,948
RN4989(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,904
RN4906,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,312
U1GWJ49(TE12L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A PWMINI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI Operating Temperature - Junction: -40°C ~ 125°C	패키지: TO-243AA	재고3,360
1SS394TE85LF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA SC59 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고28,422
TC7WH123FUTE12LF	Toshiba Semiconductor and Storage	IC MULTIVIBRATOR MONOSTABLE SM8 Logic Type: Monostable Independent Circuits: 1 Schmitt Trigger Input: No Propagation Delay: 10.3ns Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	재고6,448
TC4069UBFTELN	Toshiba Semiconductor and Storage	IC INVERTER HEX 14TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1 V ~ 3 V Logic Level - High: 4 V ~ 12 V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	패키지: 14-TSSOP (0.173", 4.40mm Width)	재고6,512
TC35661SBG-203,EL	Toshiba Semiconductor and Storage	IC RF TXRX BLUETOOTH 64-FBGA Type: TxRx Only RF Family/Standard: Bluetooth Protocol: Bluetooth v3.0 Modulation: - Frequency: 2.4GHz Data Rate (Max): 2Mbps Power - Output: 2dBm Sensitivity: -90dBm Memory Size: - Serial Interfaces: I2C, SPI, UART GPIO: - Voltage - Supply: 1.8 V ~ 3.3 V Current - Receiving: 63mA Current - Transmitting: 63mA Operating Temperature: -40°C ~ 85°C Package / Case: 64-FBGA	패키지: 64-FBGA	재고17,460
TLP292-4(V4-TP,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	패키지: 16-SOIC (0.179", 4.55mm Width)	재고17,286
TLP626(BV,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	패키지: 4-DIP (0.300", 7.62mm)	재고18,852
TB67H401FTG(O,EL)	Toshiba Semiconductor and Storage	BRUSHED MOTOR DRIVER IC 1-CHANNE Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel, PWM Technology: BiCDMOS Step Resolution: - Applications: General Purpose Current - Output: 6A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 47 V Operating Temperature: -20°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-VQFN (7x7)	패키지: 48-VFQFN Exposed Pad	재고32,910
74HC14D	Toshiba Semiconductor and Storage	IC INVERTER SCHMITT 6CH 14SOIC Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.3 V ~ 1.5 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	패키지: 14-SOIC (0.154", 3.90mm Width)	재고6,492
TCR3UG50A,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 5V 300MA 4WCSP-F Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.195V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	패키지: 4-XFBGA, WLCSP	재고43,290
TCR3DF335,LM(CT	Toshiba Semiconductor and Storage	300MA LDO VOUT=3.35V DROPOUT=230 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.35V Voltage - Output (Max): - Voltage Dropout (Max): 0.25V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	패키지: SC-74A, SOT-753	재고7,504
RN2104-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	재고18,000
2SC4738-GR-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SSM Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 120 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	재고14,370
TK095N65Z5-S1F-S	Toshiba Semiconductor and Storage	650V DTMOS6-HIGH SPEED DIODE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: -	Request a Quote
TK160F10N1L-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 160A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
RN1406-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: -	재고18,000
74HC4053FT	Toshiba Semiconductor and Storage	IC SWITCH SPDTX3 100OHM 16TSSOPB Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 100Ohm Channel-to-Channel Matching (ΔRon): 5Ohm Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 38ns, 38ns -3db Bandwidth: 200MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1MHz Operating Temperature: -40°C ~ 125°C Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOPB	패키지: -	재고7,425

TPC8042(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 18A 8-SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

패키지: 8-SOIC (0.173", 4.40mm Width)

재고2,368

TK6A45DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 5.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고4,224

TK380P60Y,RQ

Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 360µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고32,502

TPH1R005PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 45V 150A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 22.5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.04 mOhm @ 50A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고6,512

SSM6N56FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: SOT-563, SOT-666

재고34,896

2SC6040,T2Q(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 800V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

패키지: SC-71

재고4,784

2SC2655-O(ND1,AF)

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고4,592

2SA1837,HFEYHF(M

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고2,832

2SC2712-OTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

패키지: TO-236-3, SC-59, SOT-23-3

재고21,948

RN4989(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,904

RN4906,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,312

U1GWJ49(TE12L,F)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A PWMINI

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI
Operating Temperature - Junction: -40°C ~ 125°C

패키지: TO-243AA

재고3,360

1SS394TE85LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SC59

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고28,422

TC7WH123FUTE12LF

Toshiba Semiconductor and Storage

IC MULTIVIBRATOR MONOSTABLE SM8

Logic Type: Monostable
Independent Circuits: 1
Schmitt Trigger Input: No
Propagation Delay: 10.3ns
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

패키지: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

재고6,448

TC4069UBFTELN

Toshiba Semiconductor and Storage

IC INVERTER HEX 14TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1 V ~ 3 V
Logic Level - High: 4 V ~ 12 V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

재고6,512

TC35661SBG-203,EL

Toshiba Semiconductor and Storage

IC RF TXRX BLUETOOTH 64-FBGA

Type: TxRx Only
RF Family/Standard: Bluetooth
Protocol: Bluetooth v3.0
Modulation: -
Frequency: 2.4GHz
Data Rate (Max): 2Mbps
Power - Output: 2dBm
Sensitivity: -90dBm
Memory Size: -
Serial Interfaces: I2C, SPI, UART
GPIO: -
Voltage - Supply: 1.8 V ~ 3.3 V
Current - Receiving: 63mA
Current - Transmitting: 63mA
Operating Temperature: -40°C ~ 85°C
Package / Case: 64-FBGA

패키지: 64-FBGA

재고17,460

TLP292-4(V4-TP,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

패키지: 16-SOIC (0.179", 4.55mm Width)

재고17,286

TLP626(BV,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

패키지: 4-DIP (0.300", 7.62mm)

재고18,852

TB67H401FTG(O,EL)

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC 1-CHANNE

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel, PWM
Technology: BiCDMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 6A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 47 V
Operating Temperature: -20°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-VQFN (7x7)

패키지: 48-VFQFN Exposed Pad

재고32,910

74HC14D

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT 6CH 14SOIC

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.3 V ~ 1.5 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

패키지: 14-SOIC (0.154", 3.90mm Width)

재고6,492

TCR3UG50A,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 5V 300MA 4WCSP-F

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.195V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

패키지: 4-XFBGA, WLCSP

재고43,290

TCR3DF335,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=3.35V DROPOUT=230

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.35V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.25V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

패키지: SC-74A, SOT-753

재고7,504

RN2104-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

재고18,000

2SC4738-GR-LXHF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 120 mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

재고14,370

TK095N65Z5-S1F-S

Toshiba Semiconductor and Storage

650V DTMOS6-HIGH SPEED DIODE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: -

Request a Quote

TK160F10N1L-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM(W)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

Request a Quote

RN1406-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: -

재고18,000

74HC4053FT

Toshiba Semiconductor and Storage

IC SWITCH SPDTX3 100OHM 16TSSOPB

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 100Ohm
Channel-to-Channel Matching (ΔRon): 5Ohm
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 38ns, 38ns
-3db Bandwidth: 200MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -50dB @ 1MHz
Operating Temperature: -40°C ~ 125°C
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOPB

패키지: -

재고7,425