페이지 49 - Toshiba Semiconductor and Storage 제품 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  49/163
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TPC8026(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
패키지: 8-SOIC (0.173", 4.40mm Width)
재고7,840
TK7J90E,S1E
Toshiba Semiconductor and Storage

MOSFET N-CH 900V TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고6,252
SSM3J118TU(TE85L)
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 650mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고29,628
TPN11006NL,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 17A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고6,224
2SC2229-Y(MIT1,F,M
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,512
HN1C01FU-GR,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,888
RN1906(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고2,496
1SS294,LF
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA SMINI

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Capacitance @ Vr, F: 25pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
  • Operating Temperature - Junction: 125°C (Max)
패키지: TO-236-3, SC-59, SOT-23-3
재고3,312
TCR2EN115,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 1.15V 200MA 4SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.15V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
패키지: 4-XFDFN Exposed Pad
재고2,864
TCR2LF33,LM(CT
Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 2µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고92,382
TC58BVG1S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고4,864
TC4SU11F(T5L,F,T)
Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 3 V ~ 18 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Logic Level - Low: 1 V ~ 3 V
  • Logic Level - High: 4 V ~ 12 V
  • Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
패키지: SC-74A, SOT-753
재고3,568
TC7SH86FSTPL3
Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP FSV

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: fSV
  • Package / Case: SOT-953
패키지: SOT-953
재고3,120
TC74HC14AFELF
Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14SOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.3 V ~ 1.5 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOP
  • Package / Case: 14-SOIC (0.173", 4.40mm Width)
패키지: 14-SOIC (0.173", 4.40mm Width)
재고23,952
74HC02D(BJ)
Toshiba Semiconductor and Storage

IC GATE NOR QUAD 2 IN 14SOIC

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOIC
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
패키지: 14-SOIC (0.154", 3.90mm Width)
재고21,780
TL1F2-NW0,L
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.85V
  • Lumens/Watt @ Current - Test: 133 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 550mA
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 2020 (5050 Metric)
  • Supplier Device Package: 6450
  • Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
  • Height - Seated (Max): 0.057" (1.45mm)
패키지: 2020 (5050 Metric)
재고8,766
TODX2353(F)
Toshiba Semiconductor and Storage

TXRX MOD OPTICAL 500KBPS 650NM

  • Data Rate: 500kbps
  • Wavelength: 650nm
  • Applications: General Purpose
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Connector Type: JIS F07
  • Mounting Type: Through Hole
패키지: -
재고6,192
DF2B7AFS,L3M
Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 5.5V (Max)
  • Voltage - Breakdown (Min): 5.8V
  • Voltage - Clamping (Max) @ Ipp: 20V
  • Current - Peak Pulse (10/1000µs): 4A (8/20µs)
  • Power - Peak Pulse: 80W
  • Power Line Protection: No
  • Applications: -
  • Capacitance @ Frequency: 8.5pF @ 1MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
패키지: SOD-923
재고6,588
DF2B6M4SL,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 25VC SL2-2

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 5.5V (Max)
  • Voltage - Breakdown (Min): 5.6V
  • Voltage - Clamping (Max) @ Ipp: 25V
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: 30W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.2pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
패키지: 0201 (0603 Metric)
재고90,918
hot TLP222G(F)
Toshiba Semiconductor and Storage

IC PHOTOCOUPLER PHOTORELAY 4-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
  • Relay Type: Relay
패키지: 4-DIP (0.300", 7.62mm)
재고709,092
TLP4006G(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 8-DIP

  • Circuit: DPST-NO/NC (1 Form A and B)
  • Output Type: AC, DC
  • On-State Resistance (Max): 25 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Relay Type: Relay
패키지: 8-DIP (0.300", 7.62mm)
재고6,408
hot TLP176GA(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 35 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
패키지: 4-SOP (0.173", 4.40mm)
재고6,804
TC78H621FNG,EL
Toshiba Semiconductor and Storage

BRUSHED DC MOTOR DRIVER DUAL-CHA

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고82,752
TK11S10N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고11,667
TCR5RG14A-LF
Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT: 1.4V

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.4V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 13 µA
  • Current - Supply (Max): -
  • PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSPF (0.65x0.65)
패키지: -
재고492
RN2909-LF-CT
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR47KOHM Q1BER22KOH

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고9,000
RN2111-LF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고9,000
CRS09-TE85L
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
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