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Toshiba Semiconductor and Storage 제품

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hot TPC6104(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.5A VS6 2-3T1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고19,200
TK6A65W,S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5.8A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,924
SSM3K36MFV,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
패키지: SOT-723
재고568,950
2SD2406-Y(F)
Toshiba Semiconductor and Storage

TRANS NPN 80V 4A TO220NIS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
  • Current - Collector Cutoff (Max): 30µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
  • Power - Max: 25W
  • Frequency - Transition: 8MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
패키지: TO-220-3 Full Pack
재고7,280
RN2422TE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 200MW SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고4,224
RN4901,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고4,320
TA76431S,T6MURAF(J
Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
패키지: TO-226-3, TO-92-3 Long Body
재고6,352
TB67S101AFTG,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 47 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFQFN Exposed Pad
  • Supplier Device Package: 48-WQFN (7x7)
패키지: 48-WFQFN Exposed Pad
재고30,474
TC7WB66CFK,LF
Toshiba Semiconductor and Storage

IC DUAL BUS SWITCH US8

  • Type: Bus Switch
  • Circuit: 2 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
패키지: 8-VFSOP (0.091", 2.30mm Width)
재고7,632
TC4SU69FT5LFT
Toshiba Semiconductor and Storage

IC GATE INVERTER SGL SSOP5

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 3 V ~ 18 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Logic Level - Low: 1 V ~ 3 V
  • Logic Level - High: 4 V ~ 12 V
  • Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
패키지: SC-74A, SOT-753
재고2,912
TC74LCX245FTELM
Toshiba Semiconductor and Storage

IC BUS TRANSCEIVER 8BIT 20TSSOP

  • Logic Type: Transceiver, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
패키지: 20-TSSOP (0.173", 4.40mm Width)
재고7,760
TC75S51F,LF
Toshiba Semiconductor and Storage

IC OPAMP GP 5SSOP

  • Amplifier Type: General Purpose
  • Number of Circuits: 1
  • Output Type: -
  • Slew Rate: 0.5 V/µs
  • Gain Bandwidth Product: -
  • -3db Bandwidth: -
  • Current - Input Bias: 1pA
  • Voltage - Input Offset: 2mV
  • Current - Supply: 60µA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고28,164
74HCT4051D(BJ)
Toshiba Semiconductor and Storage

IC MUX/DEMUX 8X1 16SOIC

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: 8:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 120 Ohm
  • Channel-to-Channel Matching (ΔRon): 6 Ohm
  • Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): ±1 V ~ 5 V
  • Switch Time (Ton, Toff) (Max): 39ns, 32ns
  • -3db Bandwidth: 180MHz
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 3.5pF
  • Current - Leakage (IS(off)) (Max): 400nA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고49,014
TL1L2-NW0,L
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
  • Current - Test: 350mA
  • Voltage - Forward (Vf) (Typ): 2.85V
  • Lumens/Watt @ Current - Test: 133 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 1A
  • Viewing Angle: 120°
  • Mounting Type: Surface Mount
  • Package / Case: 1414 (3535 Metric)
  • Supplier Device Package: 3535
  • Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
  • Height - Seated (Max): 0.080" (2.03mm)
패키지: 1414 (3535 Metric)
재고6,714
TLP3106(TP,F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 4A 30V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 40 mOhm
  • Load Current: 4A
  • Voltage - Input: 1.33VDC
  • Voltage - Load: 0 ~ 30 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 6-SOP (0.173", 4.40mm)
  • Supplier Device Package: 6-SOP (2.54mm)
  • Relay Type: Relay
패키지: 6-SOP (0.173", 4.40mm)
재고2,808
TLP290-4(GB-TP,E)
Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

  • Number of Channels: 4
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 400% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.2V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고5,238
TLP292-4(V4GBTPE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.179", 4.55mm Width)
재고3,744
TLP2468(F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPN COLLECTOR 8SO

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Input Type: DC
  • Output Type: Open Collector
  • Current - Output / Channel: 25mA
  • Data Rate: 20MBd
  • Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,084
TB6585FG,8,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC, SENSO

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,368
TPH6R30ANL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 66A/45A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
재고33,678
TJ60S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고2,115
TC78B011FTG-EL
Toshiba Semiconductor and Storage

3-PHASE BRUSHLESS MOTOR CONTROLL

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: I2C
  • Technology: NMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 240mA
  • Voltage - Supply: 5.5V ~ 27V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (5x5)
패키지: -
재고22,260
TJ200F04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 200A TO220SM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
Request a Quote
TCR2DG21-LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.15V @ 100mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 70 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLCSP
  • Supplier Device Package: 4-WCSP (0.79x0.79)
패키지: -
Request a Quote
TCR8BM085A-L3F
Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.85V, DROPOUT=1

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.85V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.215V @ 800mA
  • Current - Output: 800mA
  • Current - Quiescent (Iq): 36 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
패키지: -
재고29,826
TRS8E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 8A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 28pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고12
RN1711-LF
Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
재고9,000
TCR8BM30A-L3F
Toshiba Semiconductor and Storage

800MA LDO, VOUT=3.0V, DROPOUT=17

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.285V @ 800mA
  • Current - Output: 800mA
  • Current - Quiescent (Iq): 36 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
패키지: -
재고29,910