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Toshiba Semiconductor and Storage 제품

기록 4,549
페이지  6/163
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TK4P60DB(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,016
TK11A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고6,528
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고2,496
SSM3J35CTC,L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.25A CST3C

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
패키지: SC-101, SOT-883
재고3,792
2SK2009TE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.2A SMINI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 3V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50MA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,352
TK25E60X5,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,696
2SA1020-O,F(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고5,184
2SA1020-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,560
1SS301,LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고2,976
TA58L09S,LS2PAIQ(J
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
패키지: TO-220-3 Full Pack
재고4,896
TCV7102F(TE12L,Q)
Toshiba Semiconductor and Storage

IC REG BUCK ADJ 3A SYNC 8SOP-ADV

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 5.5V
  • Current - Output: 3A
  • Frequency - Switching: 1.4MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-SOP Advance (5x5)
패키지: 8-PowerVDFN
재고6,512
TB62747AFNG,C8EL
Toshiba Semiconductor and Storage

IC LED DVR 16CH CC 24SSOP

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 26V
  • Current - Output / Channel: 45mA
  • Frequency: -
  • Dimming: -
  • Applications: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 24-SSOP
패키지: 24-LSSOP (0.220", 5.60mm Width)
재고20,766
hot TH58BVG2S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,232
TC7LX1104WBG(LC,AH
Toshiba Semiconductor and Storage

LEVEL SHIFTER 4BIT WCSP12

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 4
  • Voltage - VCCA: 1.2V ~ 3.6V
  • Voltage - VCCB: 1.2V ~ 3.6V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Tri-State, Non-Inverted
  • Data Rate: 200Mbps
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: Auto-Direction Sensing
  • Mounting Type: Surface Mount
  • Package / Case: 12-WFBGA, WLCSP
  • Supplier Device Package: 12-WCSP (1.2x1.6)
패키지: 12-WFBGA, WLCSP
재고6,240
TC74LVX174FTELM
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16TSSOP

  • Function: Master Reset
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 6
  • Clock Frequency: 95MHz
  • Max Propagation Delay @ V, Max CL: 12.8ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고2,848
DF5A6.2F(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 3VWM SMV

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 3V
  • Voltage - Breakdown (Min): 5.8V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 55pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고4,050
DF2B36FU,H3F
Toshiba Semiconductor and Storage

TVS DIODE 28VWM 40VC USC

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 32V
  • Voltage - Clamping (Max) @ Ipp: 40V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: 150W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: 6.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
패키지: SC-76, SOD-323
재고7,236
DF5A6.8JE,LM
Toshiba Semiconductor and Storage

TVS DIODE 5VWM SOT553

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V
  • Voltage - Breakdown (Min): 6.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 45pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: SOT-553
재고33,072
hot TCS20DLR,LF
Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR SOT23F

  • Function: Omnipolar Switch
  • Technology: Hall Effect
  • Polarization: Either
  • Sensing Range: ±4.4mT Trip, ±0.9mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 2.3 V ~ 5.5 V
  • Current - Supply (Max): 1.6mA (Typ)
  • Current - Output (Max): 5mA
  • Output Type: Open Drain
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: SOT-23F
패키지: SOT-23-3 Flat Leads
재고56,844
TLP626(TP1,F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 1mA
  • Current Transfer Ratio (Max): 1200% @ 1mA
  • Turn On / Turn Off Time (Typ): 10µs, 8µs
  • Rise / Fall Time (Typ): 8µs, 8µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고3,526
TLP2662(TP1,F)
Toshiba Semiconductor and Storage

OPTOISO 5KV 2CH OPN COL 8SMD

  • Number of Channels: 2
  • Inputs - Side 1/Side 2: 2/0
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Open Collector
  • Current - Output / Channel: 25mA
  • Data Rate: 10MBd
  • Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
  • Rise / Fall Time (Typ): 12ns, 3ns
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SMD
패키지: 8-SMD, Gull Wing
재고3,006
TLP5774(TP,E
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER SO6L

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 35kV/µs
  • Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
  • Pulse Width Distortion (Max): 50ns
  • Rise / Fall Time (Typ): 15ns, 8ns
  • Current - Output High, Low: 3A, 3A
  • Current - Peak Output: 4A
  • Voltage - Forward (Vf) (Typ): 1.65V
  • Current - DC Forward (If) (Max): 8mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 6-SO
  • Approvals: CQC, cUR, UR, VDE
패키지: 6-SOIC (0.295", 7.50mm Width)
재고5,040
TC78B015AFTG,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC FOR 1

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (5x5)
패키지: 36-WFQFN Exposed Pad
재고37,422
TC78B041FNG,EL
Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Speed
  • Output Configuration: High Side, Low Side
  • Interface: PWM
  • Technology: -
  • Step Resolution: -
  • Applications: Fan Controller
  • Current - Output: 2mA
  • Voltage - Supply: 6V ~ 16.5V
  • Voltage - Load: 4.5V ~ 5.3V
  • Operating Temperature: -40°C ~ 115°C
  • Mounting Type: Surface Mount
  • Package / Case: 30-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 30-SSOP
패키지: 30-LSSOP (0.220", 5.60mm Width)
재고3,472
TCKE805NA-RF
Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

  • Function: Electronic Fuse
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: 4.4V ~ 18V
  • Current - Output: 5A
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-WSONB (3x3)
패키지: -
재고99,165
SSM3K341TU-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 60V 6A SOT323F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
패키지: -
재고33,078
CRS15I30A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고8,940
RN2907-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고18,000