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Toshiba Semiconductor and Storage 제품

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TK28N65W,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,660
RN4910(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고6,432
CCS15F40,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A CST2C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 40V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: CST2C
  • Operating Temperature - Junction: 150°C (Max)
패키지: 2-SMD, No Lead
재고96,660
1SS272TE85LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC61B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SC-61B
패키지: SC-61AA
재고4,560
TA76L431S(T6SOY,QM
Toshiba Semiconductor and Storage

IC REG LINEAR 0.5MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 0.5mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
패키지: TO-226-3, TO-92-3 Long Body
재고5,744
TA58L12S(FJTN,AQ)
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: LSTM
패키지: TO-220-3 Full Pack
재고5,568
TA58L05S(FJTN,QM)
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: 3-HSIP
패키지: TO-220-3 Full Pack
재고6,320
TCK22922G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.1 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 25 mOhm
  • Input Type: Non-Inverting
  • Features: Load Discharge, Slew Rate Controlled
  • Fault Protection: Reverse Current
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
패키지: 6-UFBGA, WLCSP
재고50,424
TC7USB221FT(EL,M)
Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 14-TSSOP

  • Type: Multiplexer/Demultiplexer
  • Circuit: 2 x 1:2
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고16,266
TC7SZ07FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V USV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Open Drain
  • Current - Output High, Low: -, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: 5-TSSOP, SC-70-5, SOT-353
재고7,632
TC74LCX541FK(EL,K)
Toshiba Semiconductor and Storage

IC BUFF/DVR 8BIT LOW V 20VSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 20-VSSOP
패키지: 20-VFSOP (0.118", 3.00mm Width)
재고23,304
TC7SZ34F,LJ(CT
Toshiba Semiconductor and Storage

IC BUFFER UHS SGL SMV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 32mA, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고27,894
TL2FL-NW0,L
Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

  • Color: White, Cool
  • CCT (K): 5000K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 26 lm (23 lm ~ 29 lm)
  • Current - Test: 65mA
  • Voltage - Forward (Vf) (Typ): 2.82V
  • Lumens/Watt @ Current - Test: 136 lm/W
  • CRI (Color Rendering Index): 70
  • Current - Max: 100mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3014 Metric)
  • Supplier Device Package: 3014
  • Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
  • Height - Seated (Max): 0.030" (0.77mm)
패키지: 1206 (3014 Metric)
재고2,016
LTA085C184F
Toshiba Semiconductor and Storage

LCD 8.5INCH 800X480 WVGA TOUCH

  • Display Type: TFT - Color
  • Display Mode: Transmissive
  • Touchscreen: Resistive
  • Diagonal Screen Size: 8.5" (215.90mm)
  • Viewing Area: 184.80mm W x 110.88mm H
  • Backlight: CCFL
  • Dot Pixels: 800 x 480 (WVGA)
  • Interface: Parallel, 18-Bit (RGB)
  • Graphics Color: Red, Green, Blue (RGB)
  • Background Color: -
패키지: -
재고4,608
TC35678FSG-002
Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

  • Type: TxRx + MCU
  • RF Family/Standard: Bluetooth
  • Protocol: Bluetooth v4.2
  • Modulation: GFSK
  • Frequency: 2.4GHz
  • Data Rate (Max): -
  • Power - Output: 0dBm
  • Sensitivity: -93dBm
  • Memory Size: 256kB Flash, 384kB ROM, 192kB RAM
  • Serial Interfaces: I2C, SPI
  • GPIO: 17
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Receiving: 3.3mA
  • Current - Transmitting: 3.3mA
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 60-VFQFN Exposed Pad
패키지: 60-VFQFN Exposed Pad
재고6,120
TLP748J(TP1,F)
Toshiba Semiconductor and Storage

OPTOISOLATOR 4KV SCR 6SMD

  • Output Type: SCR
  • Zero Crossing Circuit: No
  • Number of Channels: 1
  • Voltage - Isolation: 4000Vrms
  • Voltage - Off State: 600V
  • Static dV/dt (Min): 5V/µs
  • Current - LED Trigger (Ift) (Max): 10mA
  • Current - On State (It (RMS)) (Max): 150mA
  • Current - Hold (Ih): 1mA
  • Turn On Time: 15µs
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Gull Wing
  • Supplier Device Package: 6-SMD
  • Approvals: BSI, SEMKO, UR
패키지: 6-SMD, Gull Wing
재고112,800
TLP290(BL-TP,SE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 200% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
패키지: 4-SOIC (0.179", 4.55mm)
재고25,944
TLP2366(TPL,E
Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL SO6-5

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Push-Pull, Totem Pole
  • Current - Output / Channel: 10mA
  • Data Rate: 20MBd
  • Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Voltage - Forward (Vf) (Typ): 1.61V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
패키지: 6-SOIC (0.179", 4.55mm Width) 5 Leads
재고7,362
TMPM368FDFG
Toshiba Semiconductor and Storage

TX FAMILY MCU

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 80MHz
  • Connectivity: CANbus, EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART, USB
  • Peripherals: DMA, LVD, POR, WDT
  • Number of I/O: 59
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
  • Data Converters: A/D 8x12b, D/A 2x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
패키지: 100-LQFP
재고11,400
7UL1T02FU,LF
Toshiba Semiconductor and Storage

L-MOS LVP SERIES GATE NOR VCC:2.

  • Logic Type: NOR Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.1V ~ 0.4V
  • Logic Level - High: 2.2V ~ 2.48V
  • Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: 5-TSSOP, SC-70-5, SOT-353
재고45,690
TCR15AG12,LF
Toshiba Semiconductor and Storage

1500MA LDO VOUT1.2V DROPOUT120MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,552
RN1114-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 1 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고8,910
TK5P60W5-RVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고6,000
TK125V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
패키지: -
재고15,000
TCK423G-L3F
Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 2.7V ~ 28V
  • Logic Voltage - VIL, VIH: 0.4V, 1.2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WCSPG (0.8x1.2)
패키지: -
재고29,859
TRS8V65H-LQ
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A DFN8X8

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 520pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Operating Temperature - Junction: 175°C
패키지: -
재고13,500
TPC8227-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
TW070J120B-S1Q
Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5.8V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
  • Vgs (Max): ±25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
패키지: -
재고189