페이지 2 - EPC 제품 | Heisener Electronics
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EPC 제품

기록 103
페이지  2/4
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EPC2015CENGR
EPC

TRANS GAN 40V 36A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (11-Solder Bar)
  • Package / Case: Die
패키지: Die
재고4,336
EPC8009ENGR
EPC

TRANS GAN 65V 4.1A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 32.5V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 138 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고4,864
EPC8004ENGR
EPC

TRANS GAN 40V 4.4A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고7,360
EPC2801
EPC

TRANS GAN 100V 25A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고2,288
EPC8007ENGR
EPC

TRANS GAN 40V 3.8A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 20V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고6,272
EPC2047ENGRT
EPC

TRANS GAN 200V BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고2,672
EPC2033ENGRT
EPC

TRANS GAN 150V 31A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고14,268
EPC2039
EPC

TRANS GAN 80V BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고1,616,796
EPC2018
EPC

TRANS GAN 150V 12A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
  • Vgs (Max): +6V, -5V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고52,842
EPC2024
EPC

MOSFET NCH 40V 60A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 19mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고28,356
EPC8002
EPC

TRANS GAN 65V 2.7A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 65V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고607,644
EPC2033
EPC

TRANS GAN 150V 7MOHM BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고31,656
EPC2022
EPC

TRANS GAN 100V 3MOHM BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고48,558
EPC2021
EPC

TRANS GAN 80V 90A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 14mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고25,038
EPC2029
EPC

TRANS GAN 80V 31A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고32,184
EPC2012C
EPC

TRANS GAN 200V 5A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die Outline (4-Solder Bar)
  • Package / Case: Die
패키지: Die
재고196,962
EPC2036
EPC

TRANS GAN 100V 1A BUMPED DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고5,327,856
EPC2105ENGRT
EPC

MOSFET 2NCH 80V 9.5A DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고46,992
EPC2361ENGRT
EPC

TRANS GAN 100V .001OHM 7QFN

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고16,950
EPC23102ENGRT
EPC

IC HALF BRIDGE DRIVER 35A 13WQFN

  • Output Configuration: Half Bridge
  • Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
  • Interface: Logic, PWM
  • Load Type: Inductive, Capacitive, Resistive
  • Technology: Gallium Nitride (GaN) FETs
  • Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
  • Current - Output / Channel: 35A
  • Current - Peak Output: -
  • Voltage - Supply: 4.5V ~ 5.5V
  • Voltage - Load: 10V ~ 80V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 13-PowerWFQFN
  • Supplier Device Package: 13-WQFN-HR (3.5x5)
패키지: -
Request a Quote
EPC2216
EPC

GANFET N-CH 15V 3.4A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 15 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
재고116,046
EPC2204
EPC

TRANS GAN 100V DIE 5.6MOHM

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
재고177,651
EPC2206
EPC

GANFET N-CH 80V 90A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
재고182,820
EPC2100
EPC

GANFET 2N-CH 30V 10A/40A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고690
EPC2054
EPC

TRANS GAN 200V DIE 43MOHM

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 100 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
Request a Quote
EPC2067
EPC

TRANS GAN .0015OHM 40V 14LGA

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 69A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 18mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3267 pF @ 20 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.55mOhm @ 37A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: -
재고13,467
EPC2306
EPC

TRANS GAN 100V .0038OHM 3X5PQFN

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 7-QFN (3x5)
  • Package / Case: 7-PowerWQFN
패키지: -
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EPC23104ENGRT
EPC

IC GAN EPOWER STAGE 100V 10A

  • Output Configuration: Half Bridge
  • Applications: DC Motors, DC-DC Converters
  • Interface: Logic
  • Load Type: Capacitive and Resistive
  • Technology: Gallium Nitride (GaN) FETs
  • Rds On (Typ): 7.6mOhm LS + HS
  • Current - Output / Channel: 15A
  • Current - Peak Output: 78A
  • Voltage - Supply: 10V ~ 80V
  • Voltage - Load: 10V ~ 80V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Features: Bootstrap Circuit, Slew Rate Controlled
  • Fault Protection: ESD, Over Voltage, Short Circuit
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 13-PowerWFQFN
  • Supplier Device Package: 13-WQFN-HR (3.5x5)
패키지: -
재고24,159