페이지 3 - EPC 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
EPC2040ENGR	EPC	TRANS GAN 25V BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 6V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 28 mOhm @ 1.5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고4,480
EPC2031ENGR	EPC	TRANS GAN 60V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,792
EPC2029ENGR	EPC	TRANS GAN 80V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고6,336
EPC8002ENGR	EPC	TRANS GAN 65V 2A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고3,120
EPC2039ENGRT	EPC	TRANS GAN 80V 6.8A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고4,608
EPC2012	EPC	TRANS GAN 200V 3A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 100V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고29,382
EPC2015	EPC	TRANS GAN 40V 33A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	패키지: Die	재고22,938
EPC2014	EPC	TRANS GAN 40V 10A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	패키지: Die	재고269,130
EPC2031ENGRT	EPC	MOSFET NCH 60V 31A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고55,554
EPC2010C	EPC	TRANS GAN 200V 22A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (7-Solder Bar) Package / Case: Die	패키지: Die	재고109,092
EPC8010	EPC	TRANS GAN 100V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고52,914
EPC8009	EPC	TRANS GAN 65V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: Die	재고23,238
EPC2014C	EPC	TRANS GAN 40V 10A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (5-Solder Bar) Package / Case: Die	패키지: Die	재고824,184
EPC2100ENG	EPC	TRANS GAN 2N-CH 30V BUMPED DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,296
EPC2102ENGRT	EPC	MOSFET ARRAY 2N-CH 60V DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tj) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,752
EPC2108ENGRT	EPC	TRANS GAN 3N-CH BUMPED DIE FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V, 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	패키지: 9-VFBGA	재고23,700
EPC2304ENGRT	EPC	TRANS GAN 200V .005OHM 3X5PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 7-QFN (3x5) Package / Case: 7-PowerWQFN	패키지: -	재고115,131
EPC23103ENGRT	EPC	IC GAN EPOWER STAGE 100V 20A Output Configuration: Half Bridge Applications: DC Motors, DC-DC Converters Interface: Logic Load Type: Capacitive and Resistive Technology: Gallium Nitride (GaN) FETs Rds On (Typ): 7.6mOhm LS + HS Current - Output / Channel: 25A Current - Peak Output: 109A Voltage - Supply: 10V ~ 80V Voltage - Load: 10V ~ 80V Operating Temperature: -40°C ~ 125°C (TJ) Features: Bootstrap Circuit, Slew Rate Controlled Fault Protection: ESD, Over Voltage, Short Circuit Mounting Type: Surface Mount, Wettable Flank Package / Case: 13-PowerWFQFN Supplier Device Package: 13-WQFN-HR (3.5x5)	패키지: -	재고12,414
EPC2215	EPC	GAN TRANS 200V 8MOHM BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고25,461
EPC2218	EPC	GANFET N-CH 100V DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고124,368
EPC2207	EPC	TRANS GAN 200V DIE .022OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고46,158
EPC2104	EPC	GANFET 2N-CH 100V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	재고13,416
EPC2055	EPC	GANFET N-CH 40V 29A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1111 pF @ 20 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고86,289
EPC2065	EPC	GAN FET 80V .0036OHM 8BUMP DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고12,258
EPC2066	EPC	TRANSISTOR GAN 40V .001OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 28mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고26,142
EPC2045	EPC	GANFET N-CH 100V 16A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고155,760
EPC2619	EPC	TRANS GAN 100V .0042 OHM 6LGA FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	재고9,858
EPC2304	EPC	Linear IC's FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 102A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 7-QFN (3x5) Package / Case: 7-PowerWQFN	패키지: -	Request a Quote

EPC2040ENGR

EPC

TRANS GAN 25V BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 6V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 1.5A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고4,480

EPC2031ENGR

EPC

TRANS GAN 60V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,792

EPC2029ENGR

EPC

TRANS GAN 80V 31A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고6,336

EPC8002ENGR

EPC

TRANS GAN 65V 2A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고3,120

EPC2039ENGRT

EPC

TRANS GAN 80V 6.8A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고4,608

EPC2012

EPC

TRANS GAN 200V 3A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 100V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고29,382

EPC2015

EPC

TRANS GAN 40V 33A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die

패키지: Die

재고22,938

EPC2014

EPC

TRANS GAN 40V 10A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V
Vgs (Max): +6V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

패키지: Die

재고269,130

EPC2031ENGRT

EPC

MOSFET NCH 60V 31A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고55,554

EPC2010C

EPC

TRANS GAN 200V 22A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (7-Solder Bar)
Package / Case: Die

패키지: Die

재고109,092

EPC8010

EPC

TRANS GAN 100V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.48nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 50V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고52,914

EPC8009

EPC

TRANS GAN 65V 2.7A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고23,238

EPC2014C

EPC

TRANS GAN 40V 10A BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die

패키지: Die

재고824,184

EPC2100ENG

EPC

TRANS GAN 2N-CH 30V BUMPED DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,296

EPC2102ENGRT

EPC

MOSFET ARRAY 2N-CH 60V DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,752

EPC2108ENGRT

EPC

TRANS GAN 3N-CH BUMPED DIE

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V, 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

패키지: 9-VFBGA

재고23,700

EPC2304ENGRT

EPC

TRANS GAN 200V .005OHM 3X5PQFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Package / Case: 7-PowerWQFN

패키지: -

재고115,131

EPC23103ENGRT

EPC

IC GAN EPOWER STAGE 100V 20A

Output Configuration: Half Bridge
Applications: DC Motors, DC-DC Converters
Interface: Logic
Load Type: Capacitive and Resistive
Technology: Gallium Nitride (GaN) FETs
Rds On (Typ): 7.6mOhm LS + HS
Current - Output / Channel: 25A
Current - Peak Output: 109A
Voltage - Supply: 10V ~ 80V
Voltage - Load: 10V ~ 80V
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Bootstrap Circuit, Slew Rate Controlled
Fault Protection: ESD, Over Voltage, Short Circuit
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 13-PowerWFQFN
Supplier Device Package: 13-WQFN-HR (3.5x5)

패키지: -

재고12,414

EPC2215

EPC

GAN TRANS 200V 8MOHM BUMPED DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고25,461

EPC2218

EPC

GANFET N-CH 100V DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고124,368

EPC2207

EPC

TRANS GAN 200V DIE .022OHM

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고46,158

EPC2104

EPC

GANFET 2N-CH 100V 23A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

재고13,416

EPC2055

EPC

GANFET N-CH 40V 29A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1111 pF @ 20 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고86,289

EPC2065

EPC

GAN FET 80V .0036OHM 8BUMP DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 40 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고12,258

EPC2066

EPC

TRANSISTOR GAN 40V .001OHM

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고26,142

EPC2045

EPC

GANFET N-CH 100V 16A DIE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고155,760

EPC2619

EPC

TRANS GAN 100V .0042 OHM 6LGA

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

재고9,858

EPC2304

EPC

Linear IC's

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Package / Case: 7-PowerWQFN

패키지: -

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