Fairchild/ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Fairchild/ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 343
페이지  1/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FGH40T65SPD_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 267W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16mJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 16ns/37ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고82,056
650V
80A
120A
2.4V @ 15V, 40A
267W
1.16mJ (on), 280µJ (off)
Standard
35nC
16ns/37ns
400V, 40A, 6 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot HGTG11N120CND
Fairchild/ON Semiconductor

IGBT 1200V 43A 298W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
  • Power - Max: 298W
  • Switching Energy: 950µJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/180ns
  • Test Condition: 960V, 11A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고166,644
1200V
43A
80A
2.4V @ 15V, 11A
298W
950µJ (on), 1.3mJ (off)
Standard
100nC
23ns/180ns
960V, 11A, 10 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGB40T65SPD_F085
Fairchild/ON Semiconductor

IGBT FIELD STOP 650V 80A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 970µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,872
650V
80A
120A
2.4V @ 15V, 40A
267W
970µJ (on), 280µJ (off)
Standard
36nC
18ns/35ns
400V, 40A, 6 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
ISL9V5045S3ST_F085
Fairchild/ON Semiconductor

IGBT 480V 51A 300W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 480V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고17,232
480V
51A
-
1.6V @ 4V, 10A
300W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot FGD3040G2_F085
Fairchild/ON Semiconductor

IGBT 400V 41A 150W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고156,000
400V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
-/4.8µs
300V, 6.5A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
FGH30N60LSDTU
Fairchild/ON Semiconductor

IGBT 600V 60A 480W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
  • Power - Max: 480W
  • Switching Energy: 1.1mJ (on), 21mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 18ns/250ns
  • Test Condition: 400V, 30A, 6.8 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,848
600V
60A
90A
1.4V @ 15V, 30A
480W
1.1mJ (on), 21mJ (off)
Standard
225nC
18ns/250ns
400V, 30A, 6.8 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot FGL35N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 70A 368W TO264

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
  • Power - Max: 368W
  • Switching Energy: 2.5mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 34ns/172ns
  • Test Condition: 600V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 337ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264-3
패키지: TO-264-3, TO-264AA
재고7,680
1200V
70A
105A
2.2V @ 15V, 35A
368W
2.5mJ (on), 1.7mJ (off)
Standard
210nC
34ns/172ns
600V, 35A, 10 Ohm, 15V
337ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264-3
FGA30N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 60A 339W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 339W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 730ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고6,276
1200V
60A
90A
2V @ 15V, 30A
339W
-
Standard
208nC
-
-
730ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGH30S130P
Fairchild/ON Semiconductor

IGBT 1300V 60A 500W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1300V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 500W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,184
1300V
60A
90A
2.3V @ 15V, 30A
500W
-
Standard
78nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot HGTG20N60A4
Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 105µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 15ns/73ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고432,624
600V
70A
280A
2.7V @ 15V, 20A
290W
105µJ (on), 150µJ (off)
Standard
142nC
15ns/73ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGA20N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 40A 298W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 298W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 137nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 447ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고26,808
1200V
40A
60A
2V @ 15V, 20A
298W
-
Standard
137nC
-
-
447ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot SGL160N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 160A 250W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
  • Power - Max: 250W
  • Switching Energy: 2.5mJ (on), 1.76mJ (off)
  • Input Type: Standard
  • Gate Charge: 345nC
  • Td (on/off) @ 25°C: 40ns/90ns
  • Test Condition: 300V, 80A, 3.9 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고5,856
600V
160A
300A
2.6V @ 15V, 80A
250W
2.5mJ (on), 1.76mJ (off)
Standard
345nC
40ns/90ns
300V, 80A, 3.9 Ohm, 15V
95ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot HGTG30N60A4D
Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 280µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 390V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고126,420
600V
75A
240A
2.6V @ 15V, 30A
463W
280µJ (on), 240µJ (off)
Standard
225nC
25ns/150ns
390V, 30A, 3 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot HGTG30N60A4
Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 280µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 390V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고120,384
600V
75A
240A
2.6V @ 15V, 30A
463W
280µJ (on), 240µJ (off)
Standard
225nC
25ns/150ns
390V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FGL40N120ANDTU
Fairchild/ON Semiconductor

IGBT 1200V 64A 500W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 2.3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 15ns/110ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고161,328
1200V
64A
160A
3.2V @ 15V, 40A
500W
2.3mJ (on), 1.1mJ (off)
Standard
220nC
15ns/110ns
600V, 40A, 5 Ohm, 15V
112ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot FGL60N100BNTD
Fairchild/ON Semiconductor

IGBT 1000V 60A 180W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 140ns/630ns
  • Test Condition: 600V, 60A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): 1.2µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고250,032
1000V
60A
120A
2.9V @ 15V, 60A
180W
-
Standard
275nC
140ns/630ns
600V, 60A, 51 Ohm, 15V
1.2µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
FGY75N60SMD
Fairchild/ON Semiconductor

IGBT 600V 150A 750W POWER-247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: 750W
  • Switching Energy: 2.3mJ (on), 770µJ (off)
  • Input Type: Standard
  • Gate Charge: 248nC
  • Td (on/off) @ 25°C: 24ns/136ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Exposed Pad
  • Supplier Device Package: PowerTO-247-3
패키지: TO-247-3 Exposed Pad
재고16,296
600V
150A
225A
2.5V @ 15V, 75A
750W
2.3mJ (on), 770µJ (off)
Standard
248nC
24ns/136ns
400V, 75A, 3 Ohm, 15V
55ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Exposed Pad
PowerTO-247-3
hot FGA25N120ANTDTU
Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
  • Power - Max: 312W
  • Switching Energy: 4.1mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/190ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고42,600
1200V
50A
90A
2.65V @ 15V, 50A
312W
4.1mJ (on), 960µJ (off)
Standard
200nC
50ns/190ns
600V, 25A, 10 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot FGH40T100SMD
Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 333W
  • Switching Energy: 2.35mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 265nC
  • Td (on/off) @ 25°C: 29ns/285ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 78ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고236,052
1000V
80A
120A
2.3V @ 15V, 40A
333W
2.35mJ (on), 1.15mJ (off)
Standard
265nC
29ns/285ns
600V, 40A, 10 Ohm, 15V
78ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGA60N65SMD
Fairchild/ON Semiconductor

IGBT 650V 120A 600W TO3P

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.54mJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 189nC
  • Td (on/off) @ 25°C: 18ns/104ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 47ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고7,656
650V
120A
180A
2.5V @ 15V, 60A
600W
1.54mJ (on), 450µJ (off)
Standard
189nC
18ns/104ns
400V, 60A, 3 Ohm, 15V
47ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot HGTG10N120BND
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 850µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고85,680
1200V
35A
80A
2.7V @ 15V, 10A
298W
850µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
ISL9V5036P3_F085
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO220AA-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고8,760
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot ISL9V3040P3
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고324,540
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
ISL9V5045S3ST
Fairchild/ON Semiconductor

IGBT 480V 51A 300W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 480V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,764
480V
51A
-
1.6V @ 4V, 10A
300W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot ISL9V5036S3ST
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,820
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot ISL9V3040D3ST
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고1,348,140
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
HGTD1N120BNS9A
Fairchild/ON Semiconductor

IGBT 1200V 5.3A 60W TO252AA

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 5.3A
  • Current - Collector Pulsed (Icm): 6A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
  • Power - Max: 60W
  • Switching Energy: 70µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 15ns/67ns
  • Test Condition: 960V, 1A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고48,402
1200V
5.3A
6A
2.9V @ 15V, 1A
60W
70µJ (on), 90µJ (off)
Standard
14nC
15ns/67ns
960V, 1A, 82 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
FGD3440G2_F085
Fairchild/ON Semiconductor

IGBT 400V 26.9A 166W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 26.9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: -/5.3µs
  • Test Condition: 300V, 6.5A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고49,326
400V
26.9A
-
1.2V @ 4V, 6A
166W
-
Logic
24nC
-/5.3µs
300V, 6.5A, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA