Infineon Technologies 제품 - 다이오드 - RF

부품 번호	제조업체	설명	패키지	재고	Voltage - Peak Reverse (Max)	Current - Max	Capacitance @ Vr, F	Resistance @ If, F	Power Dissipation (Max)	Operating Temperature	Package / Case	Supplier Device Package
BAR6502VH6327XTSA1	Infineon Technologies	RF DIODE PIN 30V 250MW SC79-2 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 30V Current - Max: 100 mA Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz Resistance @ If, F: 900mOhm @ 10mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2	패키지: -	재고59,691	30V	100 mA	0.8pF @ 3V, 1MHz	900mOhm @ 10mA, 100MHz	250 mW	150°C (TJ)	SC-79, SOD-523	PG-SC79-2
BAT68E6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 8V 150MW SOT23-3 Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 8V Current - Max: 130 mA Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10Ohm @ 5mA, 10kHz Power Dissipation (Max): 150 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	재고42,471	8V	130 mA	1pF @ 0V, 1MHz	10Ohm @ 5mA, 10kHz	150 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BA89202LE6327	Infineon Technologies	RECTIFIER DIODE, 35V Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100 mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2-1	패키지: -	Request a Quote	35V	100 mA	1.1pF @ 3V, 1MHz	500mOhm @ 10mA, 100MHz	-	150°C (TJ)	SOD-882	PG-TSLP-2-1
BA895E6327	Infineon Technologies	PIN DIODE Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 50 mA Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-80 Supplier Device Package: SCD-80	패키지: -	Request a Quote	50V	50 mA	0.6pF @ 10V, 1MHz	7Ohm @ 10mA, 100MHz	-	150°C (TJ)	SC-80	SCD-80
BA89202VH6127XTSA1	Infineon Technologies	RF DIODE STANDARD 35V SC79-2 Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100 mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2	패키지: -	재고228,216	35V	100 mA	1.1pF @ 3V, 1MHz	500mOhm @ 10mA, 100MHz	-	150°C (TJ)	SC-79, SOD-523	PG-SC79-2
BAT1704E6583HTSA1	Infineon Technologies	BAT17 - RF MIXER AND DETECTOR SC Diode Type: Schottky - 1 Pair Series Connection Voltage - Peak Reverse (Max): 4V Current - Max: 130 mA Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Power Dissipation (Max): 150 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	Request a Quote	4V	130 mA	0.75pF @ 0V, 1MHz	15Ohm @ 5mA, 10kHz	150 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BAR6406WE6327	Infineon Technologies	RF PIN DIODE > ANTENNA SWITCH Diode Type: PIN - Single Voltage - Peak Reverse (Max): 150V Current - Max: 100 mA Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	150V	100 mA	0.35pF @ 20V, 1MHz	1.35Ohm @ 100mA, 100MHz	250 mW	150°C (TJ)	SC-70, SOT-323	SOT-323
BA595E6359HTMA1	Infineon Technologies	RF DIODE PIN 50V SC79-2 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 50 mA Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2-1	패키지: -	Request a Quote	50V	50 mA	0.6pF @ 10V, 1MHz	7Ohm @ 10mA, 100MHz	-	150°C (TJ)	SC-79, SOD-523	PG-SC79-2-1
BAR6404E6327HTSA1	Infineon Technologies	RF DIODE PIN 150V 250MW SOT23-3 Diode Type: PIN - 1 Pair Series Connection Voltage - Peak Reverse (Max): 150V Current - Max: 100 mA Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	재고18,000	150V	100 mA	0.35pF @ 20V, 1MHz	1.35Ohm @ 100mA, 100MHz	250 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BAT15-098LRH	Infineon Technologies	MIXER DIODE, LOW BARRIER, X BAND Diode Type: Schottky - 1 Pair Common Cathode Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: 4-XFDFN Supplier Device Package: PG-TSLP-4-7	패키지: -	Request a Quote	4V	110 mA	0.5pF @ 0V, 1MHz	-	100 mW	150°C (TJ)	4-XFDFN	PG-TSLP-4-7
BAT63-07WE6327	Infineon Technologies	MIXER DIODE, LOW BARRIER Diode Type: Schottky - 2 Independent Voltage - Peak Reverse (Max): 3V Current - Max: 100 mA Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: -	Request a Quote	3V	100 mA	0.85pF @ 0.2V, 1MHz	-	100 mW	150°C (TJ)	SC-82A, SOT-343	PG-SOT343-4
BAT15-098LRHE6327	Infineon Technologies	MIXER DIODE, LOW BARRIER, X BAND Diode Type: Schottky - 2 Independent Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TA) Package / Case: 4-XFDFN Supplier Device Package: PG-TSLP-4-7	패키지: -	Request a Quote	4V	110 mA	-	-	-	-55°C ~ 150°C (TA)	4-XFDFN	PG-TSLP-4-7
BAR141E6327HTSA1	Infineon Technologies	RF DIODE PIN 100V 250MW SOT23-3 Diode Type: PIN - 1 Pair Series Connection Voltage - Peak Reverse (Max): 100V Current - Max: 140 mA Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz Resistance @ If, F: 12Ohm @ 10mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	Request a Quote	100V	140 mA	0.5pF @ 50V, 1MHz	12Ohm @ 10mA, 100MHz	250 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BAR8602ELSE6327XTSA1	Infineon Technologies	RF PIN DIODE > ANTENNA SWITCH Diode Type: - Voltage - Peak Reverse (Max): - Current - Max: - Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-
BAR81WE6327	Infineon Technologies	PIN DIODE Diode Type: Standard - Single Voltage - Peak Reverse (Max): 30V Current - Max: 100 mA Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz Resistance @ If, F: 1Ohm @ 5mA, 100MHz Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: -	Request a Quote	30V	100 mA	0.9pF @ 3V, 1MHz	1Ohm @ 5mA, 100MHz	100 mW	150°C (TJ)	SC-82A, SOT-343	PG-SOT343-4
BAT15099E6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 4V 100MW SOT143-4 Diode Type: Schottky - 2 Independent Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT-143-3D	패키지: -	재고10,251	4V	110 mA	0.35pF @ 0V, 1MHz	-	100 mW	150°C (TJ)	TO-253-4, TO-253AA	PG-SOT-143-3D
BAR6406E6327HTSA1	Infineon Technologies	RF DIODE PIN 150V 250MW SOT23-3 Diode Type: PIN - 1 Pair Common Anode Voltage - Peak Reverse (Max): 150V Current - Max: 100 mA Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	재고56,049	150V	100 mA	0.35pF @ 20V, 1MHz	1.35Ohm @ 100mA, 100MHz	250 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BAT17-06WE6327	Infineon Technologies	RF MIXER/DETECTOR SCHOTTKY DIODE Diode Type: Schottky - 1 Pair Common Anode Voltage - Peak Reverse (Max): 4V Current - Max: 130 mA Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Power Dissipation (Max): 150 mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3-1	패키지: -	Request a Quote	4V	130 mA	0.75pF @ 0V, 1MHz	15Ohm @ 5mA, 10kHz	150 mW	150°C (TJ)	SC-70, SOT-323	PG-SOT323-3-1
BAT1902ELE6327XTMA1	Infineon Technologies	BAT19 - RF DIODE Diode Type: - Voltage - Peak Reverse (Max): - Current - Max: - Capacitance @ Vr, F: - Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-
BAT1704E6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 4V 150MW SOT23-3 Diode Type: Schottky - 1 Pair Series Connection Voltage - Peak Reverse (Max): 4V Current - Max: 130 mA Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Power Dissipation (Max): 150 mW Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	재고55,419	4V	130 mA	0.75pF @ 0V, 1MHz	15Ohm @ 5mA, 10kHz	150 mW	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BA885E7631HTMA1	Infineon Technologies	RF DIODE PIN 50V SC79-2 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 50 mA Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2-1	패키지: -	Request a Quote	50V	50 mA	0.6pF @ 10V, 1MHz	7Ohm @ 10mA, 100MHz	-	150°C (TJ)	SC-79, SOD-523	PG-SC79-2-1
BAT15-05W	Infineon Technologies	RF MIXER/DETECTOR SCHOTTKY DIODE Diode Type: Schottky - 1 Pair Common Cathode Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	4V	110 mA	0.5pF @ 0V, 1MHz	-	100 mW	150°C (TJ)	SC-70, SOT-323	SOT-323
BAT1804E6327HTSA1	Infineon Technologies	DIODE ARRAY GP 35V 100MA SOT23 Diode Type: PIN - 1 Pair Series Connection Voltage - Peak Reverse (Max): 35V Current - Max: 100 mA Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	재고31,728	35V	100 mA	1pF @ 20V, 1MHz	-	-	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23
BAT1504WH2110XTSA1	Infineon Technologies	RF DIODES PG-SOT323-3 Diode Type: Schottky - 1 Pair Series Connection Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: -	재고267,804	4V	110 mA	0.35pF @ 0V, 1MHz	5.8Ohm @ 50mA, 1MHz	100 mW	150°C (TJ)	SC-70, SOT-323	PG-SOT323-3
BAT62-02LSE6327	Infineon Technologies	MIXER DIODE, LOW BARRIER Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 40V Current - Max: 20 mA Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: 0201 (0603 Metric) Supplier Device Package: PG-TSSLP-2-1	패키지: -	Request a Quote	40V	20 mA	0.6pF @ 0V, 1MHz	-	100 mW	150°C (TJ)	0201 (0603 Metric)	PG-TSSLP-2-1
BAR61E6327HTSA1	Infineon Technologies	RF DIODE PIN 100V 250MW SOT143 Diode Type: PIN - PI Element Voltage - Peak Reverse (Max): 100V Current - Max: 140 mA Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz Resistance @ If, F: 12Ohm @ 10mA, 100MHz Power Dissipation (Max): 250 mW Operating Temperature: 150°C (TJ) Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	패키지: -	Request a Quote	100V	140 mA	0.5pF @ 50V, 1MHz	12Ohm @ 10mA, 100MHz	250 mW	150°C (TJ)	TO-253-4, TO-253AA	-
BAT15-05WH6327XTSA1	Infineon Technologies	RF MIXER/DETECTOR SCHOTTKY DIODE Diode Type: Schottky - 1 Pair Common Cathode Voltage - Peak Reverse (Max): 4V Current - Max: 110 mA Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz Power Dissipation (Max): 100 mW Operating Temperature: 150°C (TJ) Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	4V	110 mA	0.5pF @ 0V, 1MHz	5.5Ohm @ 50mA, 1MHz	100 mW	150°C (TJ)	SC-70, SOT-323	SOT-323
BAT1805E6327HTSA1	Infineon Technologies	PIN DIODE, 35V V(BR) Diode Type: - Voltage - Peak Reverse (Max): 35V Current - Max: 100 mA Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 5mA, 200MHz Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	Request a Quote	35V	100 mA	1pF @ 20V, 1MHz	700mOhm @ 5mA, 200MHz	-	150°C (TJ)	TO-236-3, SC-59, SOT-23-3	PG-SOT23

BAR6502VH6327XTSA1

Infineon Technologies

RF DIODE PIN 30V 250MW SC79-2

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2

패키지: -

재고59,691

30V

100 mA

0.8pF @ 3V, 1MHz

900mOhm @ 10mA, 100MHz

250 mW

150°C (TJ)

SC-79, SOD-523

PG-SC79-2

BAT68E6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 8V 150MW SOT23-3

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 8V
Current - Max: 130 mA
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

재고42,471

8V

130 mA

1pF @ 0V, 1MHz

10Ohm @ 5mA, 10kHz

150 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BA89202LE6327

Infineon Technologies

RECTIFIER DIODE, 35V

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100 mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2-1

패키지: -

Request a Quote

35V

100 mA

1.1pF @ 3V, 1MHz

500mOhm @ 10mA, 100MHz

-

150°C (TJ)

SOD-882

PG-TSLP-2-1

BA895E6327

Infineon Technologies

PIN DIODE

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-80
Supplier Device Package: SCD-80

패키지: -

Request a Quote

50V

50 mA

0.6pF @ 10V, 1MHz

7Ohm @ 10mA, 100MHz

-

150°C (TJ)

SC-80

SCD-80

BA89202VH6127XTSA1

Infineon Technologies

RF DIODE STANDARD 35V SC79-2

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 35V
Current - Max: 100 mA
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2

패키지: -

재고228,216

35V

100 mA

1.1pF @ 3V, 1MHz

500mOhm @ 10mA, 100MHz

-

150°C (TJ)

SC-79, SOD-523

PG-SC79-2

BAT1704E6583HTSA1

Infineon Technologies

BAT17 - RF MIXER AND DETECTOR SC

Diode Type: Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 4V
Current - Max: 130 mA
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

Request a Quote

4V

130 mA

0.75pF @ 0V, 1MHz

15Ohm @ 5mA, 10kHz

150 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BAR6406WE6327

Infineon Technologies

RF PIN DIODE > ANTENNA SWITCH

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 150V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

Request a Quote

150V

100 mA

0.35pF @ 20V, 1MHz

1.35Ohm @ 100mA, 100MHz

250 mW

150°C (TJ)

SC-70, SOT-323

SOT-323

BA595E6359HTMA1

Infineon Technologies

RF DIODE PIN 50V SC79-2

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2-1

패키지: -

Request a Quote

50V

50 mA

0.6pF @ 10V, 1MHz

7Ohm @ 10mA, 100MHz

-

150°C (TJ)

SC-79, SOD-523

PG-SC79-2-1

BAR6404E6327HTSA1

Infineon Technologies

RF DIODE PIN 150V 250MW SOT23-3

Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 150V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

재고18,000

150V

100 mA

0.35pF @ 20V, 1MHz

1.35Ohm @ 100mA, 100MHz

250 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BAT15-098LRH

Infineon Technologies

MIXER DIODE, LOW BARRIER, X BAND

Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: 4-XFDFN
Supplier Device Package: PG-TSLP-4-7

패키지: -

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4V

110 mA

0.5pF @ 0V, 1MHz

-

100 mW

150°C (TJ)

4-XFDFN

PG-TSLP-4-7

BAT63-07WE6327

Infineon Technologies

MIXER DIODE, LOW BARRIER

Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 3V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

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3V

100 mA

0.85pF @ 0.2V, 1MHz

-

100 mW

150°C (TJ)

SC-82A, SOT-343

PG-SOT343-4

BAT15-098LRHE6327

Infineon Technologies

MIXER DIODE, LOW BARRIER, X BAND

Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -55°C ~ 150°C (TA)
Package / Case: 4-XFDFN
Supplier Device Package: PG-TSLP-4-7

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4V

110 mA

-

-55°C ~ 150°C (TA)

4-XFDFN

PG-TSLP-4-7

BAR141E6327HTSA1

Infineon Technologies

RF DIODE PIN 100V 250MW SOT23-3

Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 100V
Current - Max: 140 mA
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

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100V

140 mA

0.5pF @ 50V, 1MHz

12Ohm @ 10mA, 100MHz

250 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BAR8602ELSE6327XTSA1

Infineon Technologies

RF PIN DIODE > ANTENNA SWITCH

Diode Type: -
Voltage - Peak Reverse (Max): -
Current - Max: -
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

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-

BAR81WE6327

Infineon Technologies

PIN DIODE

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

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30V

100 mA

0.9pF @ 3V, 1MHz

1Ohm @ 5mA, 100MHz

100 mW

150°C (TJ)

SC-82A, SOT-343

PG-SOT343-4

BAT15099E6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 4V 100MW SOT143-4

Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT-143-3D

패키지: -

재고10,251

4V

110 mA

0.35pF @ 0V, 1MHz

-

100 mW

150°C (TJ)

TO-253-4, TO-253AA

PG-SOT-143-3D

BAR6406E6327HTSA1

Infineon Technologies

RF DIODE PIN 150V 250MW SOT23-3

Diode Type: PIN - 1 Pair Common Anode
Voltage - Peak Reverse (Max): 150V
Current - Max: 100 mA
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

재고56,049

150V

100 mA

0.35pF @ 20V, 1MHz

1.35Ohm @ 100mA, 100MHz

250 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BAT17-06WE6327

Infineon Technologies

RF MIXER/DETECTOR SCHOTTKY DIODE

Diode Type: Schottky - 1 Pair Common Anode
Voltage - Peak Reverse (Max): 4V
Current - Max: 130 mA
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3-1

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4V

130 mA

0.75pF @ 0V, 1MHz

15Ohm @ 5mA, 10kHz

150 mW

150°C (TJ)

SC-70, SOT-323

PG-SOT323-3-1

BAT1902ELE6327XTMA1

Infineon Technologies

BAT19 - RF DIODE

Diode Type: -
Voltage - Peak Reverse (Max): -
Current - Max: -
Capacitance @ Vr, F: -
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

BAT1704E6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 4V 150MW SOT23-3

Diode Type: Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 4V
Current - Max: 130 mA
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Power Dissipation (Max): 150 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

재고55,419

4V

130 mA

0.75pF @ 0V, 1MHz

15Ohm @ 5mA, 10kHz

150 mW

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BA885E7631HTMA1

Infineon Technologies

RF DIODE PIN 50V SC79-2

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2-1

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50V

50 mA

0.6pF @ 10V, 1MHz

7Ohm @ 10mA, 100MHz

-

150°C (TJ)

SC-79, SOD-523

PG-SC79-2-1

BAT15-05W

Infineon Technologies

RF MIXER/DETECTOR SCHOTTKY DIODE

Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

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4V

110 mA

0.5pF @ 0V, 1MHz

-

100 mW

150°C (TJ)

SC-70, SOT-323

SOT-323

BAT1804E6327HTSA1

Infineon Technologies

DIODE ARRAY GP 35V 100MA SOT23

Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 35V
Current - Max: 100 mA
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

재고31,728

35V

100 mA

1pF @ 20V, 1MHz

-

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23

BAT1504WH2110XTSA1

Infineon Technologies

RF DIODES PG-SOT323-3

Diode Type: Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: -

재고267,804

4V

110 mA

0.35pF @ 0V, 1MHz

5.8Ohm @ 50mA, 1MHz

100 mW

150°C (TJ)

SC-70, SOT-323

PG-SOT323-3

BAT62-02LSE6327

Infineon Technologies

MIXER DIODE, LOW BARRIER

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 40V
Current - Max: 20 mA
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: 0201 (0603 Metric)
Supplier Device Package: PG-TSSLP-2-1

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40V

20 mA

0.6pF @ 0V, 1MHz

-

100 mW

150°C (TJ)

0201 (0603 Metric)

PG-TSSLP-2-1

BAR61E6327HTSA1

Infineon Technologies

RF DIODE PIN 100V 250MW SOT143

Diode Type: PIN - PI Element
Voltage - Peak Reverse (Max): 100V
Current - Max: 140 mA
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250 mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

패키지: -

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100V

140 mA

0.5pF @ 50V, 1MHz

12Ohm @ 10mA, 100MHz

250 mW

150°C (TJ)

TO-253-4, TO-253AA

-

BAT15-05WH6327XTSA1

Infineon Technologies

RF MIXER/DETECTOR SCHOTTKY DIODE

Diode Type: Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max): 4V
Current - Max: 110 mA
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Power Dissipation (Max): 100 mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

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4V

110 mA

0.5pF @ 0V, 1MHz

5.5Ohm @ 50mA, 1MHz

100 mW

150°C (TJ)

SC-70, SOT-323

SOT-323

BAT1805E6327HTSA1

Infineon Technologies

PIN DIODE, 35V V(BR)

Diode Type: -
Voltage - Peak Reverse (Max): 35V
Current - Max: 100 mA
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

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35V

100 mA

1pF @ 20V, 1MHz

700mOhm @ 5mA, 200MHz

-

150°C (TJ)

TO-236-3, SC-59, SOT-23-3

PG-SOT23