페이지 6 - Infineon Technologies 제품 - 다이오드 - RF | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - RF

기록 183
페이지  6/7
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Peak Reverse (Max)
Current - Max
Capacitance @ Vr, F
Resistance @ If, F
Power Dissipation (Max)
Operating Temperature
Package / Case
Supplier Device Package
BA895H6327XTSA1
Infineon Technologies

DIODE RF SW 50V 50MA SCD80

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 50mA
  • Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
  • Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고7,168
50V
50mA
0.6pF @ 10V, 1MHz
7 Ohm @ 10mA, 100MHz
-
150°C (TJ)
SC-80
PG-SCD80-2
BA89202VH6433XTMA1
Infineon Technologies

DIODE RF SW 35V 100MA SC79

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
패키지: SC-79, SOD-523
재고5,184
35V
100mA
1.1pF @ 3V, 1MHz
500 mOhm @ 10mA, 100MHz
-
150°C (TJ)
SC-79, SOD-523
PG-SC79-2
BA892H6770XTSA1
Infineon Technologies

DIODE RF SW 35V 100MA SCD80

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고3,968
35V
100mA
1.1pF @ 3V, 1MHz
500 mOhm @ 10mA, 100MHz
-
150°C (TJ)
SC-80
PG-SCD80-2
BA892H6433XTMA1
Infineon Technologies

DIODE RF SW 35V 100MA SCD80

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고2,448
35V
100mA
1.1pF @ 3V, 1MHz
500 mOhm @ 10mA, 100MHz
-
150°C (TJ)
SC-80
PG-SCD80-2
BA892H6127XTSA1
Infineon Technologies

DIODE RF SW 35V 100MA SCD80

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고4,256
35V
100mA
1.1pF @ 3V, 1MHz
500 mOhm @ 10mA, 100MHz
-
150°C (TJ)
SC-80
PG-SCD80-2
BAT 63-02V E6327
Infineon Technologies

DIODE SCHOTTKY 3V 100MA SC-79

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 3V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
패키지: SC-79, SOD-523
재고5,520
3V
100mA
0.85pF @ 0.2V, 1MHz
-
100mW
150°C (TJ)
SC-79, SOD-523
PG-SC79-2
BAT 15-02LS E6327
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 110mA
  • Capacitance @ Vr, F: -
  • Resistance @ If, F: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2
패키지: 2-XFDFN
재고5,408
4V
110mA
-
-
-
-
2-XFDFN
PG-TSSLP-2
BAR 90-081LS E6327
Infineon Technologies

DIODE ARRAY 80V 100MA TSSLP-8

  • Diode Type: PIN - 4 Independent
  • Voltage - Peak Reverse (Max): 80V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
  • Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 8-XFDFN
  • Supplier Device Package: PG-TSSLP-8
패키지: 8-XFDFN
재고6,704
80V
100mA
0.35pF @ 1V, 1MHz
800 mOhm @ 10mA, 100MHz
150mW
150°C (TJ)
8-XFDFN
PG-TSSLP-8
BAR6704E6327HTSA1
Infineon Technologies

DIODE SIL PIN 150V 200MA SOT-23

  • Diode Type: PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 150V
  • Current - Max: 200mA
  • Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
  • Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,944
150V
200mA
0.55pF @ 5V, 1MHz
1 Ohm @ 10mA, 100MHz
250mW
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAR 50-02V E6768
Infineon Technologies

DIODE SIL PIN 50V 100MA SC-79

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
  • Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
패키지: SC-79, SOD-523
재고3,328
50V
100mA
0.4pF @ 5V, 1MHz
4.5 Ohm @ 10mA, 100MHz
250mW
150°C (TJ)
SC-79, SOD-523
PG-SC79-2
BAT 62-02W E6327
Infineon Technologies

DIODE SCHOTTKY 40V 20MA SCD-80

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고2,960
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
SC-80
PG-SCD80-2
BAR81WE6327BTSA1
Infineon Technologies

DIODE RF SGL 30V 100MA SOT-343

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 30V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
  • Resistance @ If, F: 1 Ohm @ 5mA, 100MHz
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고7,776
30V
100mA
0.9pF @ 3V, 1MHz
1 Ohm @ 5mA, 100MHz
100mW
150°C (TJ)
SC-82A, SOT-343
PG-SOT343-4
BAR 64-02V E6327
Infineon Technologies

DIODE RF SGL 150V 100MA SC-79

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 150V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
  • Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
패키지: SC-79, SOD-523
재고7,072
150V
100mA
0.35pF @ 20V, 1MHz
1.35 Ohm @ 100mA, 100MHz
250mW
150°C (TJ)
SC-79, SOD-523
PG-SC79-2
BAT 68-08S E6327
Infineon Technologies

DIODE SCHOTTKY 8V 130MA SOT-363

  • Diode Type: Schottky - 3 Independent
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고2,704
8V
130mA
1pF @ 0V, 1MHz
10 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BAT 68-07W E6327
Infineon Technologies

DIODE SCHOTTKY 8V 130MA SOT-343

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고7,472
8V
130mA
1pF @ 0V, 1MHz
10 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-82A, SOT-343
PG-SOT343-4
BAT6806WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY RF CA SOT-323

  • Diode Type: Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고4,000
8V
130mA
1pF @ 0V, 1MHz
10 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-70, SOT-323
PG-SOT323-3
BAT6806E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 8V 130MA SOT-23

  • Diode Type: Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,832
8V
130mA
1pF @ 0V, 1MHz
10 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAT6804WE6327BTSA1
Infineon Technologies

DIODE SCHOTTKY RF SERIES SOT-323

  • Diode Type: Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 8V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고7,920
8V
130mA
1pF @ 0V, 1MHz
10 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-70, SOT-323
PG-SOT323-3
BAT 62-09S E6327
Infineon Technologies

DIODE SCHOTTKY 40V 20MA SOT-363

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고3,824
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BAT6207WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 40V 20MA SOT-343

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고6,848
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
SC-82A, SOT-343
PG-SOT343-4
BAT6207L4E6433XTMA1
Infineon Technologies

DIODE SCHOTTKY 40V 20MA TSLP-4

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 4-XFDFN
  • Supplier Device Package: PG-TSLP-4
패키지: 4-XFDFN
재고7,456
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
4-XFDFN
PG-TSLP-4
BAT6207L4E6327XT
Infineon Technologies

DIODE SCHOTTKY 40V 20MA TSLP-4

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 4-XFDFN
  • Supplier Device Package: PG-TSLP-4
패키지: 4-XFDFN
재고5,680
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
4-XFDFN
PG-TSLP-4
BAT6202LE6327XTMA1
Infineon Technologies

DIODE SCHOTTKY 40V 20MA TSLP-2

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
패키지: SOD-882
재고3,904
40V
20mA
0.6pF @ 0V, 1MHz
-
100mW
150°C (TJ)
SOD-882
PG-TSLP-2
BAT1706WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY RF CA SOT-323

  • Diode Type: Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
  • Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고6,080
4V
130mA
0.75pF @ 0V, 1MHz
15 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-70, SOT-323
PG-SOT323-3
BAT1705WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY RF CC SOT-323

  • Diode Type: Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
  • Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고7,056
4V
130mA
0.75pF @ 0V, 1MHz
15 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-70, SOT-323
PG-SOT323-3
BAT1705E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 4V 130MA SOT-23

  • Diode Type: Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
  • Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,176
4V
130mA
0.75pF @ 0V, 1MHz
15 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAT1704WE6327HTSA1
Infineon Technologies

DIODE SCHOTTKY RF SERIES SOT-323

  • Diode Type: Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 130mA
  • Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
  • Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
  • Power Dissipation (Max): 150mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고3,392
4V
130mA
0.75pF @ 0V, 1MHz
15 Ohm @ 5mA, 10kHz
150mW
150°C (TJ)
SC-70, SOT-323
PG-SOT323-3
BAT 15-099LRH E6327
Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-4

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 4V
  • Current - Max: 110mA
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 4-XFDFN
  • Supplier Device Package: PG-TSLP-4
패키지: 4-XFDFN
재고7,264
4V
110mA
0.35pF @ 0V, 1MHz
-
100mW
150°C (TJ)
4-XFDFN
PG-TSLP-4