페이지 4 - Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이

기록 353
페이지  4/13
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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DD171N16KAHPSA1
Infineon Technologies

DIODE MODULE DK

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DD104N14KKHPSA1
Infineon Technologies

DIODE MOD GP 1400V 104A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
패키지: -
Request a Quote
Standard
1400 V
104A
1.4 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD231N22KHPSA1
Infineon Technologies

DIODE MODULE GP 2.2KV 261A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 261A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
2200 V
261A
1.55 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
25 mA @ 2200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
BAW56E6433
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 150 nA @ 70 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
Request a Quote
Standard
80 V
200mA (DC)
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
150 nA @ 70 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD171N12KHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 171A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1200 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD1200S33K2CB3S2NDSA1
Infineon Technologies

DIODE MOD GP 3300V 1200A AIHV130

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 1200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-3
패키지: -
Request a Quote
Standard
3300 V
1200A (DC)
3.5 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV130-3
DD380N22KXPSA1
Infineon Technologies

RECTIFIER DIODE MODULE

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DD700N22KHPSA3
Infineon Technologies

DIODE MODULE GP 2.2KV 700A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고9
Standard
2200 V
700A
1.36 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD500S33HE3BOSA1
Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 500A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
패키지: -
Request a Quote
Standard
3300 V
500A (DC)
3.85 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHVB130-3
BAS4006WE6327
Infineon Technologies

DIODE ARR SCHOT 40V 120MA SOT323

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: -
Request a Quote
Schottky
40 V
120mA (DC)
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
1 µA @ 30 V
150°C (Max)
Surface Mount
SC-70, SOT-323
SOT-323
BAT6406E6327HTSA1
Infineon Technologies

DIODE ARR SCHOTT 40V 250MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
재고214,008
Schottky
40 V
250mA
750 mV @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
5 ns
2 µA @ 30 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD104N18KHPSA2
Infineon Technologies

DIODE MODULE GP 1800V 104A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1.8 kV
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1800 V
104A
1.4 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1.8 kV
150°C
Chassis Mount
Module
Module
EDD480N22P60HPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB60ECO-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60ECO-1
패키지: -
Request a Quote
Standard
2200 V
480A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
Module
BG-PB60ECO-1
DD500S33HE3BPSA1
Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
패키지: -
재고6
Standard
3300 V
-
3.85 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHVB130-3
DD600S16K4NOSA1
Infineon Technologies

DIODE MODULE GP 600V 600A

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 600A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
600 V
600A (DC)
2.8 V @ 600 A
Standard Recovery >500ns, > 200mA (Io)
-
4 mA @ 1600 V
150°C
Chassis Mount
Module
-
DDB6U104N18RRBOSA1
Infineon Technologies

DIODE MODULE GP 1800V

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1800 V
-
-
-
-
-
-
Chassis Mount
Module
Module
DD104N16KKHPSA1
Infineon Technologies

DIODE MOD GP 1600V 104A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 104A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
패키지: -
Request a Quote
Standard
1600 V
104A
1.4 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD1000S33HE3BOSA1
Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 1000A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
패키지: -
Request a Quote
Standard
3300 V
1000A (DC)
3.85 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHVB130-3
DD261N20KHPSA1
Infineon Technologies

DIODE MODULE GP 2000V 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
2000 V
260A
1.42 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2000 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD600S65K3NOSA1
Infineon Technologies

DIODE MOD GP 6500V AIHV130-6

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -50°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-6
패키지: -
재고6
Standard
6500 V
-
3.5 V @ 600 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-50°C ~ 125°C
Chassis Mount
Module
A-IHV130-6
DD700N22KXPSA1
Infineon Technologies

DIODE MOD 2200V 700A BGPB60E2A-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2.2 kV
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60E2A-1
패키지: -
Request a Quote
-
2200 V
700A
1.36 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2.2 kV
150°C
Chassis Mount
Module
BG-PB60E2A-1
DD1000S33HE3BPSA1
Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
패키지: -
Request a Quote
Standard
3300 V
-
3.85 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHVB130-3
DD390N16SHPSA1
Infineon Technologies

DIODE MOD GP 1600V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 390A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
패키지: -
재고9
Standard
1600 V
390A
1.34 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 1600 V
-40°C ~ 125°C
Chassis Mount
Module
BG-PB50SB-1
DD180N22SHPSA1
Infineon Technologies

DIODE MOD GP 2200V 226A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 226A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
패키지: -
Request a Quote
Standard
2200 V
226A
-
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2200 V
-40°C ~ 135°C
Chassis Mount
Module
BG-PB34SB-1
DD1200S33K2CB3NOSA1
Infineon Technologies

DIODE MOD GP 3300V 1200A AIHV130

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 1200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV130-3
패키지: -
Request a Quote
Standard
3300 V
1200A (DC)
3.5 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV130-3
DD89N12KAHPSA1
Infineon Technologies

DIODE MOD GP 1200V 89A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
패키지: -
Request a Quote
Standard
1200 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD435N36KHPSA1
Infineon Technologies

DIODE MODULE GP 3600V 573A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io) (per Diode): 573A
  • Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Standard
3600 V
573A
1.71 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 3600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
IDFW60C65D1XKSA1
Infineon Technologies

DIODE ARRAY GP 650V 56A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 56A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 112 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
패키지: -
재고720
Standard
650 V
56A (DC)
1.75 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
112 ns
40 µA @ 650 V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3-AI