페이지 6 - Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이

기록 353
페이지  6/13
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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
DD100N16SHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 130A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 130A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고69
Standard
1600 V
130A
-
-
-
-
-
Chassis Mount
Module
Module
DD170N16SHPSA1
Infineon Technologies

DIODE MOD GP 1600V 165A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9 mA @ 1600 V
  • Operating Temperature - Junction: 135°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
패키지: -
재고90
Standard
1600 V
165A
-
-
-
9 mA @ 1600 V
135°C (Max)
Chassis Mount
Module
BG-PB34SB-1
EDD630N16P60HPSA1
Infineon Technologies

DIODE MOD GP 1600V BGPB60ECO-1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 630A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60ECO-1
패키지: -
Request a Quote
Standard
1600 V
630A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
Module
BG-PB60ECO-1
DD89N12KHPSA2
Infineon Technologies

DIODE MODULE GP 1200V 89A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1.2 kV
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1200 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1.2 kV
150°C
Chassis Mount
Module
Module
DD89N12KHPSA1
Infineon Technologies

DIODE MODULE GP 1200V 89A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고39
Standard
1200 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD400S33KL2CNOSA1
Infineon Technologies

DIODE MODULE GP 3300V AIHV73-3

  • Diode Configuration: -
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV73-3
패키지: -
Request a Quote
Standard
3300 V
-
2.6 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV73-3
DD435N34KHPSA1
Infineon Technologies

DIODE MODULE GP 3400V 573A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3400 V
  • Current - Average Rectified (Io) (per Diode): 573A
  • Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 3400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고6
Standard
3400 V
573A
1.71 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 3400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD180N20SHPSA1
Infineon Technologies

DIODE MOD GP 2000V 226A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io) (per Diode): 226A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
패키지: -
Request a Quote
Standard
2000 V
226A
-
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2000 V
-40°C ~ 135°C
Chassis Mount
Module
BG-PB34SB-1
DD61S12KHPSA1
Infineon Technologies

DIODE MODULE GP 1200V 76A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 76A
  • Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 230 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1200 V
76A
1.62 V @ 230 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1200 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD260N12KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1200 V
260A
1.32 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
150°C
Chassis Mount
Module
Module
DZ3600S17K3B2NOSA1
Infineon Technologies

DIODE MOD GP 1700V AIHM190-1

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHM190-1
패키지: -
Request a Quote
Standard
1700 V
-
2.2 V @ 3600 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHM190-1
DD540N22KTIMHPSA1
Infineon Technologies

DIODE MOD GP 2200V 540A BGPB60AT

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 540A
  • Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB60AT-1
패키지: -
Request a Quote
Standard
2200 V
540A
1.48 V @ 1.7 kA
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
150°C (Max)
Chassis Mount
Module
BG-PB60AT-1
DD1200S17H4B2BOSA2
Infineon Technologies

DIODE MOD GP 1700V AGIHMB130-1

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHMB130-1
패키지: -
재고3
Standard
1700 V
-
2.1 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 150°C
Chassis Mount
Module
AG-IHMB130-1
BAT6404E6327HTSA1
Infineon Technologies

DIODE ARR SCHOTT 40V 250MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 30 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
재고283,758
Schottky
40 V
250mA
750 mV @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
5 ns
2 µA @ 30 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD89N16KKHPSA1
Infineon Technologies

DIODE MOD GP 1600V 89A POWRBLOK

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 89A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK™ Module
  • Supplier Device Package: POW-R-BLOK™ Module
패키지: -
Request a Quote
Standard
1600 V
89A
1.5 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
150°C
Chassis Mount
POW-R-BLOK™ Module
POW-R-BLOK™ Module
DD340N18SHPSA1
Infineon Technologies

DIODE MOD GP 1800V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
패키지: -
Request a Quote
Standard
1800 V
330A
-
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 1800 V
-40°C ~ 135°C
Chassis Mount
Module
BG-PB50SB-1
DD380N16KHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 380A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 380A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1600 V
380A
1.4 V @ 1600 A
Standard Recovery >500ns, > 200mA (Io)
-
25 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD230S24KHPSA1
Infineon Technologies

DIODE MODULE GP 2400V 261A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io) (per Diode): 261A
  • Voltage - Forward (Vf) (Max) @ If: 1.74 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 160 mA @ 2400 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
2400 V
261A
1.74 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
160 mA @ 2400 V
150°C
Chassis Mount
Module
Module
ND89N08KHPSA1
Infineon Technologies

DIODE MOD POWERBLOCK PB20-1

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DD200S33K2CC1NOSA1
Infineon Technologies

DIODE MOD GP 3300V 200A AIHV73-3

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io) (per Diode): 200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: A-IHV73-3
패키지: -
Request a Quote
Standard
3300 V
200A (DC)
3.5 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-40°C ~ 125°C
Chassis Mount
Module
A-IHV73-3
DD171N16KHPSA1
Infineon Technologies

DIODE MODULE GP 1.6KV 171A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Standard
1600 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-40°C ~ 150°C
Chassis Mount
Module
Module
DD171N16KHPSA2
Infineon Technologies

DIODE MODULE GP 1600V 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고81
Standard
1600 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
150°C
Chassis Mount
Module
-
BAT5404E6327HTSA1
Infineon Technologies

DIODE ARR SCHOTT 30V 200MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
재고1,633,650
Schottky
30 V
200mA (DC)
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
BAS7006B5003
Infineon Technologies

DIODE ARR SCHOTT 70V 70MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
Request a Quote
Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD171N12KAHPSA2
Infineon Technologies

DIODE MODULE GP 1200V 171A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
1200 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
150°C
Chassis Mount
Module
-
BAS4005E6327HTSA1
Infineon Technologies

DIODE ARR SCHOTT 40V 120MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 1 µA @ 30 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
패키지: -
재고134,055
Schottky
40 V
120mA (DC)
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
1 µA @ 30 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
DD390N22STIMHPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 390A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
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Standard
2200 V
390A
1.34 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2200 V
150°C
Chassis Mount
Module
BG-PB50SB-1
BAS70-06B5000
Infineon Technologies

DIODE ARR SCHOT 70V 70MA SOT23-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io) (per Diode): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-3
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Schottky
70 V
70mA (DC)
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 50 V
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-3