페이지 8 - Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-841
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품 - 다이오드 - 정류기 - 어레이

기록 353
페이지  8/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
BAT5405WH6327XTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT323

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고7,888
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
150°C (Max)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BAT5404WH6327XTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT323

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고4,432
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
150°C (Max)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BAT6404E6433HTMA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,872
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAT5406E6327HTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,328
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAT5405E6327HTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,200
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAV170E6433HTMA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5nA @ 75V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,144
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
1.5µs
5nA @ 75V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAV70WH6327XTSA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT323

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 150nA @ 70V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고6,032
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
150nA @ 70V
150°C (Max)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
IDW20G120C5BFKSA1
Infineon Technologies

DIODE 1.2KV 20A RAPID2 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 31A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 83µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,072
Silicon Carbide Schottky
1200V
31A
1.65V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
83µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW20C65D2XKSA1
Infineon Technologies

DIODE 650V 20A RAPID2 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고10,296
Standard
650V
10A
2.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDP30C65D2XKSA1
Infineon Technologies

DIODE 650V 30A RAPID2 TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 31ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고9,228
Standard
650V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
31ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-220-3
PG-TO220-3
BAT 240A E6327
Infineon Technologies

DIODE ARRAY SCHOTTKY 240V SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 240V
  • Current - Average Rectified (Io) (per Diode): 400mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 400mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,400
Schottky
240V
400mA (DC)
900mV @ 400mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 200V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAS 40-05 B5003
Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,648
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
100ps
1µA @ 30V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
MMBD7000LT1HTSA1
Infineon Technologies

DIODE ARRAY GP 100V 200MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 100V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,400
Standard
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 100V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
IDW40G120C5BFKSA1
Infineon Technologies

DIODE GEN PURP 1200V 55A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 55A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 166µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,200
Silicon Carbide Schottky
1200V
55A (DC)
1.65V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
166µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW30C65D2XKSA1
Infineon Technologies

DIODE 650V 30A RAPID2 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고10,572
Standard
650V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW60C65D1XKSA1
Infineon Technologies

DIODE 650V 60A RAPID 1 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 66ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,140
Standard
650V
30A
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
66ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW30C65D1XKSA1
Infineon Technologies

DIODE 650V 30A RAPID1 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 71ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고9,600
Standard
650V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
71ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDP20C65D2XKSA1
Infineon Technologies

DIODE 650V 20A RAPID2 TO220-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고9,024
Standard
650V
10A
2.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
28ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-220-3
PG-TO220-3
BAT 18-04 E6327
Infineon Technologies

DIODE ARRAY GP 35V 100MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 120ns
  • Current - Reverse Leakage @ Vr: 20nA @ 20V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,192
Standard
35V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
120ns
20nA @ 20V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAV70E6327HTSA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 150nA @ 70V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고5,360
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
150nA @ 70V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BAV70E6433HTMA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 150nA @ 70V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,816
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
150nA @ 70V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
IDW30G120C5BFKSA1
Infineon Technologies

DIODE GEN PURP 1200V 44A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 44A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 124µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,008
Silicon Carbide Schottky
1200V
44A (DC)
1.65V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
124µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW15G120C5BFKSA1
Infineon Technologies

DIODE SCHOTKY 1200V 24A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 24A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 62µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,668
Silicon Carbide Schottky
1200V
24A (DC)
1.6V @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
62µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW10G120C5BFKSA1
Infineon Technologies

DIODE SCHOTTKY 1.2KV 10A TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 17A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,728
Silicon Carbide Schottky
1200V
17A
1.65V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 1200V
-55°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW80C65D2XKSA1
Infineon Technologies

DIODE 650V 80A CC RAPID2 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,880
Standard
650V
40A
2.2V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
36ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
IDW80C65D1XKSA1
Infineon Technologies

DIODE 650V 80A CC RAPID1 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 77ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,472
Standard
650V
40A
1.7V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
77ns
40µA @ 650V
-40°C ~ 175°C
Through Hole
TO-247-3
PG-TO247-3
BAS16SH6327XTSA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT363

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고82,140
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
150°C (Max)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BAS28E6327HTSA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT143

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고42,474
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 75V
150°C (Max)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4