페이지 14 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

기록 805
페이지  14/29
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부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDL10G65C5XUMA2
Infineon Technologies

DIODE SIL CARB 650V 10A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 180 µA @ 650 V
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,969
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
180 µA @ 650 V
300pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
DZ600N18KHPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 600A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고33
1800 V
600A
-
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1800 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
BAS3005A02VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 30 V
  • Capacitance @ Vr, F: 15pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
재고42,630
30 V
500mA
500 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 30 V
15pF @ 5V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
-55°C ~ 125°C
D921S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1630A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1630A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
패키지: -
Request a Quote
4500 V
1630A
2.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4500 V
-
Chassis Mount
DO-200AD
-
-40°C ~ 140°C
D1030N22TPRXOSA1
Infineon Technologies

DIODE GP 2.2KV 1030A D5726K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1030A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: BG-D5726K-1
  • Operating Temperature - Junction: 160°C (Max)
패키지: -
Request a Quote
2200 V
1030A
1.11 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
-
Clamp On
DO-200AB, B-PUK
BG-D5726K-1
160°C (Max)
IDWD40E65E7XKSA1
Infineon Technologies

HOME APPLIANCES 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 89 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고720
650 V
50A
2.1 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
89 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
BAS16B5003
Infineon Technologies

DIODE GP 80V 250MA SOT23-3-11

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-11
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
80 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-11
150°C
BAS16B5000
Infineon Technologies

DIODE GP 80V 250MA SOT23-3-11

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-11
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
80 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3-11
150°C
IDWD60E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고720
-
-
-
-
-
-
-
-
-
-
-
D8320N06TVFXPSA1
Infineon Technologies

DIODE GEN PURP 600V 8320A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8320A
  • Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: -25°C ~ 150°C
패키지: -
Request a Quote
600 V
8320A
795 mV @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 600 V
-
Chassis Mount
DO-200AD
-
-25°C ~ 150°C
D1031SH45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1450A
  • Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
패키지: -
Request a Quote
4500 V
1450A
4.2 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4500 V
-
Chassis Mount
DO-200AD
-
0°C ~ 140°C
BAT54E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고73,947
30 V
200mA
800 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
150°C (Max)
D1030N22TXPSA1
Infineon Technologies

DIODE GEN PURP 2.2KV 1030A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1030A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
2200 V
1030A
1.11 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDK02G120C5XTMA1
Infineon Technologies

DIODE SIC 1.2KV 11.8A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 11.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 182pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,664
1200 V
11.8A
1.65 V @ 2 A
No Recovery Time > 500mA (Io)
-
18 µA @ 1200 V
182pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
IDFW40E65D1EXKSA1
Infineon Technologies

DIODE GP 650V 42A TO247-3-AI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 42A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 76 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고720
650 V
42A
2.1 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
76 ns
40 µA @ 650 V
-
Through Hole
TO-247-3
PG-TO247-3-AI
-40°C ~ 175°C
GATELEADWHRD762XPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
AIDW12S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 650 V
  • Capacitance @ Vr, F: 363pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
12A
1.7 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 650 V
363pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
SIDC05D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
1.95 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDL04G65C5XUMA2
Infineon Technologies

DIODE SIL CARBIDE 650V 4A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 650 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고10,341
650 V
4A
1.7 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 650 V
130pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
ND171N14KHPSA1
Infineon Technologies

DIODE GEN PURP 1.4KV 104A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1400 V
104A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1400 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
SIDC03D60F6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 6A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
6A
1.6 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC03D60F6X1SA2
Infineon Technologies

DIODE GP 600V 6A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
600 V
6A
1.6 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
D4810N28TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.8KV 4810A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 4810A
  • Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
2800 V
4810A
1.078 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 2800 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 150°C
PX8244HDMG008XTMA1
Infineon Technologies

LED PX8244HDMG008XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC56D60E6X1SA1
Infineon Technologies

DIODE GP 600V 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
600 V
150A
1.25 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
D270N36TXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 270A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 270A
  • Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
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3600 V
270A
1.36 V @ 250 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 3600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 150°C
D650N02TXPSA1
Infineon Technologies

DIODE GEN PURP 200V 650A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 650A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
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200 V
650A
950 mV @ 450 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 200 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
D1821SH45TS05XOSA1
Infineon Technologies

DIODE GP 4.5KV 1710A D10026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1710A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200, Variant
  • Supplier Device Package: BG-D10026K-1
  • Operating Temperature - Junction: -
패키지: -
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4500 V
1710A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
DO-200, Variant
BG-D10026K-1
-