페이지 15 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS1603WE6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고343,224	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	150°C (Max)
BAS21E6327HTSA1	Infineon Technologies	DIODE GEN PURP 200V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고515,196	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
MMBD914LT1HTSA1	Infineon Technologies	DIODE GEN PURP 100V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고281,166	100V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAS16E6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고371,280	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAT165E6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 750MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 740mV @ 750mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 40V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고286,830	40V	750mA (DC)	740mV @ 750mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 40V	12pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	150°C (Max)
BAS3010A03WE6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 1A SOD323-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 35pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: -65°C ~ 125°C	패키지: SC-76, SOD-323	재고280,902	30V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	35pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	-65°C ~ 125°C
BAS 52-02V H6327	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 45V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고1,137,378	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
PX8240HDNG008XTMA1	Infineon Technologies	LED PX8240HDNG008XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAS70-02W-E6327	Infineon Technologies	DIODE SCHOTTKY 70V 70MA SCD80-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	100 ps	100 nA @ 50 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	150°C
DZ600N08KHPSA1	Infineon Technologies	DIODE GEN PURP 800V 735A PB501-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB501-1 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	800 V	735A	1.4 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 800 V	-	Chassis Mount	Module	BG-PB501-1	150°C
D820N28TXPSA1	Infineon Technologies	DIODE GEN PURP 2.8KV 820A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800 V Current - Average Rectified (Io): 820A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 750 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	패키지: -	Request a Quote	2800 V	820A	1.25 V @ 750 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2800 V	-	Clamp On	DO-200AA, A-PUK	-	-40°C ~ 180°C
IDDD08G65C6XTMA1	Infineon Technologies	DIODE SIL CARB 650V 24A HDSOP-10 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 24A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 27 µA @ 420 V Capacitance @ Vr, F: 401pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고6,900	650 V	24A	-	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
DZ1100N22KHPSA2	Infineon Technologies	DIODE GP 2.2KV 1100A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 1100A Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고3	2200 V	1100A	1.11 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	80 mA @ 2200 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C
DD800S17HA_B2	Infineon Technologies	RECTIFIER DIODE MODULE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D950N22TB01XPSA1	Infineon Technologies	DIODE GEN PURP 2.2KV 1024A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 1024A Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, APuk Supplier Device Package: - Operating Temperature - Junction: 180°C	패키지: -	Request a Quote	2200 V	1024A	1.12 V @ 650 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Chassis Mount	DO-200AA, APuk	-	180°C
D5810N06TVFXPSA1	Infineon Technologies	DIODE GEN PURP 600V 5800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5800A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	패키지: -	Request a Quote	600 V	5800A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 180°C
D740N44TXPSA1	Infineon Technologies	DIODE GEN PURP 4.4KV 750A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4400 V Current - Average Rectified (Io): 750A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 mA @ 4400 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	패키지: -	Request a Quote	4400 V	750A	1.45 V @ 700 A	Standard Recovery >500ns, > 200mA (Io)	-	70 mA @ 4400 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
38DN06ELEMPRXPSA1	Infineon Technologies	DIODE GP 600V 5095A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5095A Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	패키지: -	Request a Quote	600 V	5095A	990 mV @ 4500 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	E-EUPEC-0	180°C (Max)
PX3746HDNG008XTMA1	Infineon Technologies	LED PX3746HDNG008XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
IDH05SG60CXKSA2	Infineon Technologies	DIODE SIL CARB 600V 5A TO220-2-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: 110pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	5A	2.3 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 600 V	110pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
D1481N65TXPSA1	Infineon Technologies	DIODE GEN PURP 6.5KV 2200A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6500 V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 6500 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	패키지: -	Request a Quote	6500 V	2200A	1.8 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 6500 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
D255N04BXPSA1	Infineon Technologies	DIODE GEN PURP 400V 255A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 255A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	패키지: -	Request a Quote	400 V	255A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 400 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 180°C
IDC28D120T6MX1SA2	Infineon Technologies	DIODE GP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	1200 V	50A	2.05 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
GATELEADMPWHPK1258XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D400N18BVFXPSA1	Infineon Technologies	DIODE GEN PURP 1.8KV 450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	패키지: -	Request a Quote	1800 V	450A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1800 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 180°C
ND89N12KXPSA1	Infineon Technologies	THYR / DIODE MODULE DK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 89A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1.2 kV Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	1200 V	89A	1.5 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1.2 kV	-	Chassis Mount	Module	-	150°C
IDK10G120C5XTMA1	Infineon Technologies	DIODE SIC 1.2KV 31.9A TO263-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 31.9A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18 µA @ 1200 V Capacitance @ Vr, F: 525pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고3	1200 V	31.9A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	525pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2-1	-55°C ~ 175°C
46DN06B02ELEMPRXPSA1	Infineon Technologies	DIODE GP 600V 7740A D-ELEM-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 7740A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: BG-D-ELEM-1 Operating Temperature - Junction: 180°C (Max)	패키지: -	Request a Quote	600 V	7740A	980 mV @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 600 V	-	Clamp On	DO-200AA, A-PUK	BG-D-ELEM-1	180°C (Max)

BAS1603WE6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고343,224

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

150°C (Max)

BAS21E6327HTSA1

Infineon Technologies

DIODE GEN PURP 200V 250MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고515,196

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

MMBD914LT1HTSA1

Infineon Technologies

DIODE GEN PURP 100V 250MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고281,166

100V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAS16E6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고371,280

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAT165E6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 750MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 750mA (DC)
Voltage - Forward (Vf) (Max) @ If: 740mV @ 750mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 40V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고286,830

40V

750mA (DC)

740mV @ 750mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 40V

12pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

150°C (Max)

BAS3010A03WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 1A SOD323-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SC-76, SOD-323

재고280,902

30V

1A

470mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

35pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

-65°C ~ 125°C

BAS 52-02V H6327

Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 750mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 45V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고1,137,378

45V

750mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 45V

10pF @ 10V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

PX8240HDNG008XTMA1

Infineon Technologies

LED PX8240HDNG008XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

BAS70-02W-E6327

Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C

패키지: -

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70 V

70mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

100 ps

100 nA @ 50 V

1.5pF @ 0V, 1MHz

Surface Mount

SC-80

PG-SCD80-2

150°C

DZ600N08KHPSA1

Infineon Technologies

DIODE GEN PURP 800V 735A PB501-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 735A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C

패키지: -

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800 V

735A

1.4 V @ 2200 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 800 V

-

Chassis Mount

Module

BG-PB501-1

150°C

D820N28TXPSA1

Infineon Technologies

DIODE GEN PURP 2.8KV 820A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2800 V
Current - Average Rectified (Io): 820A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 750 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2800 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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2800 V

820A

1.25 V @ 750 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2800 V

-

Clamp On

DO-200AA, A-PUK

-

-40°C ~ 180°C

IDDD08G65C6XTMA1

Infineon Technologies

DIODE SIL CARB 650V 24A HDSOP-10

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 24A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고6,900

650 V

24A

-

No Recovery Time > 500mA (Io)

0 ns

27 µA @ 420 V

401pF @ 1V, 1MHz

Surface Mount

10-PowerSOP Module

PG-HDSOP-10-1

-55°C ~ 175°C

DZ1100N22KHPSA2

Infineon Technologies

DIODE GP 2.2KV 1100A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 1100A
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고3

2200 V

1100A

1.11 V @ 3000 A

Standard Recovery >500ns, > 200mA (Io)

-

80 mA @ 2200 V

-

Chassis Mount

Module

-40°C ~ 150°C

DD800S17HA_B2

Infineon Technologies

RECTIFIER DIODE MODULE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

D950N22TB01XPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 1024A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 1024A
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, APuk
Supplier Device Package: -
Operating Temperature - Junction: 180°C

패키지: -

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2200 V

1024A

1.12 V @ 650 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2200 V

-

Chassis Mount

DO-200AA, APuk

-

180°C

D5810N06TVFXPSA1

Infineon Technologies

DIODE GEN PURP 600V 5800A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5800A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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600 V

5800A

-

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 600 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 180°C

D740N44TXPSA1

Infineon Technologies

DIODE GEN PURP 4.4KV 750A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Average Rectified (Io): 750A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 mA @ 4400 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

패키지: -

Request a Quote

4400 V

750A

1.45 V @ 700 A

Standard Recovery >500ns, > 200mA (Io)

-

70 mA @ 4400 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 160°C

38DN06ELEMPRXPSA1

Infineon Technologies

DIODE GP 600V 5095A E-EUPEC-0

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5095A
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)

패키지: -

Request a Quote

600 V

5095A

990 mV @ 4500 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 600 V

-

Clamp On

DO-200AB, B-PUK

E-EUPEC-0

180°C (Max)

PX3746HDNG008XTMA1

Infineon Technologies

LED PX3746HDNG008XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

IDH05SG60CXKSA2

Infineon Technologies

DIODE SIL CARB 600V 5A TO220-2-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

5A

2.3 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 600 V

110pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

D1481N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 2200A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6500 V
Current - Average Rectified (Io): 2200A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

패키지: -

Request a Quote

6500 V

2200A

1.8 V @ 2500 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 6500 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 160°C

D255N04BXPSA1

Infineon Technologies

DIODE GEN PURP 400V 255A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 255A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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400 V

255A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 400 V

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 180°C

IDC28D120T6MX1SA2

Infineon Technologies

DIODE GP 1.2KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

1200 V

50A

2.05 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

GATELEADMPWHPK1258XXPSA1

Infineon Technologies

STD THYR/DIODEN DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

D400N18BVFXPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 450A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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1800 V

450A

-

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 1800 V

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 180°C

ND89N12KXPSA1

Infineon Technologies

THYR / DIODE MODULE DK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 89A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1.2 kV
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

1200 V

89A

1.5 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1.2 kV

-

Chassis Mount

Module

-

150°C

IDK10G120C5XTMA1

Infineon Technologies

DIODE SIC 1.2KV 31.9A TO263-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 31.9A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고3

1200 V

31.9A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

-

18 µA @ 1200 V

525pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2-1

-55°C ~ 175°C

46DN06B02ELEMPRXPSA1

Infineon Technologies

DIODE GP 600V 7740A D-ELEM-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 7740A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)

패키지: -

Request a Quote

600 V

7740A

980 mV @ 6000 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 600 V

-

Clamp On

DO-200AA, A-PUK

BG-D-ELEM-1

180°C (Max)