페이지 8 - Infineon Technologies 제품 - 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR505E6778HTSA1	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,280	500mA	50V	2.2k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR503E6393HTSA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,360	500mA	50V	2.2k	2.2k	40 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR198E6393HTSA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,296	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR192E6785HTSA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,216	100mA	50V	22k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR183E6359HTMA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,816	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR148E6393HTSA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,120	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR135E6359HTMA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,128	100mA	50V	10k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR133E6393HTSA1	Infineon Technologies	TRANS PREBIAS NPN SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 130MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,424	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	130MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 148W H6433	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고7,904	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR 569 E6327	Infineon Technologies	TRANS PREBIAS PNP 300MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,080	500mA	50V	4.7k	-	120 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	150MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 519 E6327	Infineon Technologies	TRANS PREBIAS NPN 300MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,104	500mA	50V	4.7k	-	120 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 512 B6327	Infineon Technologies	TRANS PREBIAS NPN 300MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,504	500mA	50V	4.7k	4.7k	60 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 503 B6327	Infineon Technologies	TRANS PREBIAS NPN 300MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,472	500mA	50V	2.2k	2.2k	40 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BCR 199T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고7,920	70mA	50V	47k	-	120 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-75, SOT-416	PG-SC-75
BCR 199L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고7,536	70mA	50V	47k	-	120 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BCR 199F E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSFP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고7,472	70mA	50V	47k	-	120 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	250mW	Surface Mount	SOT-723	PG-TSFP-3
BCR198WE6327BTSA1	Infineon Technologies	TRANS PREBIAS PNP 250MW SOT323-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고2,480	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR 198T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고4,272	70mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-75, SOT-416	PG-SC-75
BCR 198L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고2,784	70mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BCR 198F E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSFP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고4,832	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	250mW	Surface Mount	SOT-723	PG-TSFP-3
BCR198B6327HTLA1	Infineon Technologies	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,896	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	190MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3

BCR505E6778HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,280

500mA

50V

2.2k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR503E6393HTSA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,360

500mA

50V

2.2k

40 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR198E6393HTSA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,296

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR192E6785HTSA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,216

100mA

50V

22k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR183E6359HTMA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,816

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR148E6393HTSA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,120

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

100MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR135E6359HTMA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,128

100mA

50V

10k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

150MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR133E6393HTSA1

Infineon Technologies

TRANS PREBIAS NPN SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 130MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,424

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

130MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 148W H6433

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고7,904

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

100MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR 569 E6327

Infineon Technologies

TRANS PREBIAS PNP 300MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,080

500mA

50V

4.7k

-

120 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

150MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 519 E6327

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,104

500mA

50V

4.7k

-

120 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 512 B6327

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,504

500mA

50V

4.7k

60 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 503 B6327

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,472

500mA

50V

2.2k

40 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BCR 199T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고7,920

70mA

50V

47k

-

120 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-75, SOT-416

PG-SC-75

BCR 199L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고7,536

70mA

50V

47k

-

120 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BCR 199F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고7,472

70mA

50V

47k

-

120 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

250mW

Surface Mount

SOT-723

PG-TSFP-3

BCR198WE6327BTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고2,480

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BCR 198T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고4,272

70mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SC-75, SOT-416

PG-SC-75

BCR 198L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고2,784

70mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BCR 198F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고4,832

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

250mW

Surface Mount

SOT-723

PG-TSFP-3

BCR198B6327HTLA1

Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 190MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,896

100mA

50V

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

190MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3