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제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220-FP
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23 nC @ 10 V | 440 pF @ 100 V | ±20V | - | 28W (Tc) | 600mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_(75V 120V( PG-HSOF-5
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패키지: - |
재고8,910 |
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MOSFET (Metal Oxide) | 80 V | 220A (Tj) | 6V, 10V | 3.8V @ 120µA | 105 nC @ 10 V | 7219 pF @ 40 V | ±20V | - | 211W (Tc) | 2.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-4 | 5-PowerSFN |
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Infineon Technologies |
SICFET N-CH 1.2KV 47A TO263
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패키지: - |
재고1,704 |
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SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | - | 5.7V @ 7.5mA | 46 nC @ 18 V | 1527 pF @ 800 V | +18V, -15V | - | 227W (Tc) | 63mOhm @ 16A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
SICFET N-CH 1.2KV 13A TO263
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패키지: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | - | 5.7V @ 1.6mA | 9.4 nC @ 18 V | 312 pF @ 800 V | +18V, -15V | - | 83W (Tc) | 294mOhm @ 4A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET_(120V 300V)
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 4V @ 83µA | 65 nC @ 10 V | 4355 pF @ 25 V | ±20V | - | 125W (Tc) | 11.6mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
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패키지: - |
재고1,500 |
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MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4.5V @ 390µA | 32 nC @ 10 V | 1566 pF @ 400 V | ±20V | - | 160W (Tc) | 125mOhm @ 7.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 2V @ 250µA | 20 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 9.1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V PG-TO247-3
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패키지: - |
재고1,149 |
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MOSFET (Metal Oxide) | 100 V | 290A (Tc) | 10V | 4V @ 250µA | 540 nC @ 10 V | 19860 pF @ 50 V | ±20V | - | 520W (Tc) | 2.6mOhm @ 180A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOG-8
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패키지: - |
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MOSFET (Metal Oxide) | 80 V | 32A (Ta), 253A (Tc) | 6V, 10V | 3.8V @ 159µA | 127 nC @ 10 V | 9200 pF @ 40 V | ±20V | - | 3.8W (Ta), 231W (Tc) | 1.8mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN56
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 20A (Ta), 54A (Tc) | - | 2.35V @ 50µA | 26 nC @ 4.5 V | 2360 pF @ 15 V | - | - | - | 4.8mOhm @ 20A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
TRENCH 40<-<100V PG-HSOF-8
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 454A (Tc) | 10V | 3.6V @ 250µA | 185 nC @ 10 V | 980 pF @ 30 V | ±20V | - | 278W (Tc) | 0.8mOhm @ 150A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 80V 165A 8HSOF
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패키지: - |
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MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 3.8V @ 108µA | 90 nC @ 10 V | 6370 pF @ 40 V | ±20V | - | 167W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 55V 3.8A SOT223
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 3.8A (Ta) | - | 2V @ 250µA | 48 nC @ 10 V | 870 pF @ 25 V | - | - | - | 40mOhm @ 3.8A, 10V | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
SIC DISCRETE
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패키지: - |
재고231 |
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SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 5.2V @ 47mA | 220 nC @ 18 V | 9170 nF @ 25 V | +20V, -5V | - | 750W (Tc) | 9.9mOhm @ 108A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-8 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8-SOIC
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 20A (Ta) | - | 2.32V @ 250µA | 51 nC @ 4.5 V | 4310 pF @ 15 V | - | - | - | 4mOhm @ 20A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 37A/366A HSOG-8
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패키지: - |
재고2,289 |
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MOSFET (Metal Oxide) | 100 V | 37A (Ta), 366A (Tc) | 6V, 10V | 3.8V @ 280µA | 211 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.4mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 25V 38A/100A TDSON
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패키지: - |
재고57,168 |
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MOSFET (Metal Oxide) | 25 V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 59 nC @ 10 V | 4200 pF @ 12 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 1.05mOhm @ 30A, 10V | - | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE
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패키지: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 300A HSOG-8
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패키지: - |
재고5,400 |
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MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 3.8V @ 230µA | 187 nC @ 10 V | 13178 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 6.1A (Tc) | 10V | 3.5V @ 220µA | 27 nC @ 10 V | 550 pF @ 100 V | ±20V | - | 60W (Tc) | 600mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH >=100V
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패키지: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH >=100V
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패키지: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 500V 14.1A TO252-3
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패키지: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 14.1A (Tc) | 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | 584 pF @ 100 V | ±20V | - | 73W (Tc) | 380mOhm @ 3.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
GAN HV
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패키지: - |
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GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-85 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
SIC DISCRETE
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패키지: - |
재고777 |
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SiCFET (Silicon Carbide) | 1200 V | 98A (Tc) | 15V, 18V | 5.2V @ 17.6mA | 83 nC @ 18 V | 3460 nF @ 25 V | +20V, -5V | - | 375W (Tc) | 26.9mOhm @ 41A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET 100V 14A DIE
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패키지: - |
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MOSFET (Metal Oxide) | 100 V | 14A | 10V | - | - | - | - | - | - | 200mOhm @ 14A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 60V 6.5A TO252-3
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패키지: - |
재고6,774 |
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MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 10V | 4V @ 270µA | 10.6 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 28W (Tc) | 250mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO247-3
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패키지: - |
재고648 |
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MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 3.9V @ 1mA | 117 nC @ 10 V | 2300 pF @ 100 V | ±20V | - | 227W (Tc) | 290mOhm @ 11A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |