페이지 19 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

IRFC140NB

Infineon Technologies

MOSFET 100V 33A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 33A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 44mOhm @ 33A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

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MOSFET (Metal Oxide)

100 V

33A

10V

-

44mOhm @ 33A, 10V

-

Surface Mount

Die

IRF6216TRPBF-1

Infineon Technologies

MOSFET P-CH 150V 2.2A SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

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MOSFET (Metal Oxide)

150 V

2.2A (Ta)

10V

5V @ 250µA

49 nC @ 10 V

1280 pF @ 25 V

±20V

-

2.5W (Ta)

240mOhm @ 1.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

IPW60R299CPFKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

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MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

3.5V @ 440µA

29 nC @ 10 V

1100 pF @ 100 V

±20V

-

96W (Tc)

299mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPT014N08NM5ATMA1

Infineon Technologies

MOSFET N-CH 80V 37A/331A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

패키지: -

재고6,627

MOSFET (Metal Oxide)

80 V

37A (Ta), 331A (Tc)

6V, 10V

3.8V @ 280µA

200 nC @ 10 V

14000 pF @ 40 V

±20V

-

300W (Tc)

1.4mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

BSO613SPVGXUMA1

Infineon Technologies

MOSFET P-CH 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8-6
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

재고67,197

MOSFET (Metal Oxide)

60 V

3.44A (Ta)

10V

4V @ 1mA

30 nC @ 10 V

875 pF @ 25 V

±20V

-

2.5W (Ta)

130mOhm @ 3.44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8-6

8-SOIC (0.154", 3.90mm Width)

AIMZHN120R120M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-14
Package / Case: TO-247-4

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SiC (Silicon Carbide Junction Transistor)

1200 V

22A (Tc)

18V, 20V

5.1V @ 2.2mA

18 nC @ 20 V

458 pF @ 800 V

+23V, -5V

-

133W (Tc)

150mOhm @ 7A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-14

TO-247-4

SPB07N60C3ATMA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

650 V

7.3A (Tc)

10V

3.9V @ 350µA

27 nC @ 10 V

790 pF @ 25 V

±20V

-

83W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPD088N06N3GBTMA1

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

60 V

50A (Tc)

10V

4V @ 34µA

48 nC @ 10 V

3900 pF @ 30 V

±20V

-

71W (Tc)

8.8mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRF7380TRPBFXTMA1

Infineon Technologies

PLANAR 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

64-2098PBF

Infineon Technologies

MOSFET N-CH 30V 75A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

AIMBG120R080M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고2,901

SiCFET (Silicon Carbide)

1200 V

30A

-

-55°C ~ 175°C

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPP019N08NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고3,000

MOSFET (Metal Oxide)

80 V

32A (Ta), 191A (Tc)

6V, 10V

3.8V @ 194µA

186 nC @ 10 V

8700 pF @ 40 V

±20V

-

3.8W (Ta), 250W (Tc)

1.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IGT40R070D1ATMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

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GaNFET (Gallium Nitride)

400 V

31A (Tc)

-

1.6V @ 2.6mA

-

382 pF @ 320 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IPB65R110CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 31.2A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

650 V

31.2A (Tc)

10V

4.5V @ 1.3mA

118 nC @ 10 V

3240 pF @ 100 V

±20V

-

277.8W (Tc)

110mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB65R110CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 31.2A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고5,940

MOSFET (Metal Oxide)

650 V

31.2A (Tc)

10V

4.5V @ 1.3mA

118 nC @ 10 V

3240 pF @ 100 V

±20V

-

277.8W (Tc)

110mOhm @ 12.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AIMBG120R010M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 187A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고1,575

SiCFET (Silicon Carbide)

1200 V

187A

-

-55°C ~ 175°C

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IAUT200N08S5N023ATMA1

Infineon Technologies

MOSFET N-CH 80V 200A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

패키지: -

재고19,455

MOSFET (Metal Oxide)

80 V

200A (Tc)

6V, 10V

3.8V @ 130µA

110 nC @ 10 V

7670 pF @ 40 V

±20V

-

200W (Tc)

2.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IRF6217TRPBF-1

Infineon Technologies

MOSFET P-CH 150V 700MA 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 420mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

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MOSFET (Metal Oxide)

150 V

700mA (Ta)

10V

5V @ 250µA

9 nC @ 10 V

150 pF @ 25 V

±20V

-

2.5W (Ta)

2.4Ohm @ 420mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IRFB4020PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

200 V

18A (Tc)

10V

4.9V @ 100µA

29 nC @ 10 V

1200 pF @ 50 V

±20V

-

100W (Tc)

100mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-904

TO-220-3

IPD26DP06NMSAUMA1

Infineon Technologies

MOSFET P-CH 60V TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

60 V

-

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB60R120P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 26A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고8,850

MOSFET (Metal Oxide)

600 V

26A (Tc)

10V

4V @ 410µA

36 nC @ 10 V

1544 pF @ 400 V

±20V

-

95W (Tc)

120mOhm @ 8.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPLK70R1K2P7ATMA1

Infineon Technologies

MOSFET N-CH 700V TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

700 V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

ISK057N04LM6ATLA1

Infineon Technologies

MOSFET N-CH 40V 64A 6VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-6-1
Package / Case: 6-PowerVDFN

패키지: -

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MOSFET (Metal Oxide)

40 V

64A (Tc)

4.5V, 10V

2.3V @ 250µA

12 nC @ 10 V

870 pF @ 20 V

±20V

-

2.1W (Ta), 39.1W (Tc)

5.75mOhm @ 20A, 10V

-55°C ~ 155°C (TJ)

Surface Mount

PG-VSON-6-1

6-PowerVDFN

IPC60R070CFD7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

BSC014N06NSTATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TDSON-8 FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

패키지: -

재고28,521

MOSFET (Metal Oxide)

60 V

100A (Tc)

6V, 10V

3.3V @ 120µA

104 nC @ 10 V

8125 pF @ 30 V

±20V

-

3W (Ta), 188W (Tc)

1.45mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPB016N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고2,880

MOSFET (Metal Oxide)

80 V

170A (Tc)

6V, 10V

3.8V @ 267µA

255 nC @ 10 V

12000 pF @ 40 V

±20V

-

300W (Tc)

1.65mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPL65R1K5C6SE8211ATMA1

Infineon Technologies

IPL65R1K5 - 650V AND 700V COOLMO

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

IGLD60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 15A LSON-8

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-LSON-8-1
Package / Case: 8-LDFN Exposed Pad

패키지: -

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GaNFET (Gallium Nitride)

600 V

15A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

114W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-LSON-8-1

8-LDFN Exposed Pad

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC140NB	Infineon Technologies	MOSFET 100V 33A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 44mOhm @ 33A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	33A	10V	-	-	-	-	-	-	44mOhm @ 33A, 10V	-	Surface Mount	Die	Die
IRF6216TRPBF-1	Infineon Technologies	MOSFET P-CH 150V 2.2A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2.2A (Ta)	10V	5V @ 250µA	49 nC @ 10 V	1280 pF @ 25 V	±20V	-	2.5W (Ta)	240mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPW60R299CPFKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	3.5V @ 440µA	29 nC @ 10 V	1100 pF @ 100 V	±20V	-	96W (Tc)	299mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPT014N08NM5ATMA1	Infineon Technologies	MOSFET N-CH 80V 37A/331A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	패키지: -	재고6,627	MOSFET (Metal Oxide)	80 V	37A (Ta), 331A (Tc)	6V, 10V	3.8V @ 280µA	200 nC @ 10 V	14000 pF @ 40 V	±20V	-	300W (Tc)	1.4mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
BSO613SPVGXUMA1	Infineon Technologies	MOSFET P-CH 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8-6 Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	재고67,197	MOSFET (Metal Oxide)	60 V	3.44A (Ta)	10V	4V @ 1mA	30 nC @ 10 V	875 pF @ 25 V	±20V	-	2.5W (Ta)	130mOhm @ 3.44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8-6	8-SOIC (0.154", 3.90mm Width)
AIMZHN120R120M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-14 Package / Case: TO-247-4	패키지: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	22A (Tc)	18V, 20V	5.1V @ 2.2mA	18 nC @ 20 V	458 pF @ 800 V	+23V, -5V	-	133W (Tc)	150mOhm @ 7A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-14	TO-247-4
SPB07N60C3ATMA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	10V	3.9V @ 350µA	27 nC @ 10 V	790 pF @ 25 V	±20V	-	83W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD088N06N3GBTMA1	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	4V @ 34µA	48 nC @ 10 V	3900 pF @ 30 V	±20V	-	71W (Tc)	8.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF7380TRPBFXTMA1	Infineon Technologies	PLANAR 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-2098PBF	Infineon Technologies	MOSFET N-CH 30V 75A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG120R080M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고2,901	SiCFET (Silicon Carbide)	1200 V	30A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPP019N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 194µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고3,000	MOSFET (Metal Oxide)	80 V	32A (Ta), 191A (Tc)	6V, 10V	3.8V @ 194µA	186 nC @ 10 V	8700 pF @ 40 V	±20V	-	3.8W (Ta), 250W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IGT40R070D1ATMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	패키지: -	Request a Quote	GaNFET (Gallium Nitride)	400 V	31A (Tc)	-	1.6V @ 2.6mA	-	382 pF @ 320 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPB65R110CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 31.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB65R110CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 31.2A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고5,940	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	4.5V @ 1.3mA	118 nC @ 10 V	3240 pF @ 100 V	±20V	-	277.8W (Tc)	110mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMBG120R010M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 187A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고1,575	SiCFET (Silicon Carbide)	1200 V	187A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IAUT200N08S5N023ATMA1	Infineon Technologies	MOSFET N-CH 80V 200A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	패키지: -	재고19,455	MOSFET (Metal Oxide)	80 V	200A (Tc)	6V, 10V	3.8V @ 130µA	110 nC @ 10 V	7670 pF @ 40 V	±20V	-	200W (Tc)	2.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IRF6217TRPBF-1	Infineon Technologies	MOSFET P-CH 150V 700MA 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 420mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	700mA (Ta)	10V	5V @ 250µA	9 nC @ 10 V	150 pF @ 25 V	±20V	-	2.5W (Ta)	2.4Ohm @ 420mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFB4020PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	4.9V @ 100µA	29 nC @ 10 V	1200 pF @ 50 V	±20V	-	100W (Tc)	100mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
IPD26DP06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	60 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R120P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 26A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고8,850	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	4V @ 410µA	36 nC @ 10 V	1544 pF @ 400 V	±20V	-	95W (Tc)	120mOhm @ 8.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPLK70R1K2P7ATMA1	Infineon Technologies	MOSFET N-CH 700V TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	700 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
ISK057N04LM6ATLA1	Infineon Technologies	MOSFET N-CH 40V 64A 6VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc) Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-6-1 Package / Case: 6-PowerVDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	40 V	64A (Tc)	4.5V, 10V	2.3V @ 250µA	12 nC @ 10 V	870 pF @ 20 V	±20V	-	2.1W (Ta), 39.1W (Tc)	5.75mOhm @ 20A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	PG-VSON-6-1	6-PowerVDFN
IPC60R070CFD7X7SA1	Infineon Technologies	MOSFET N-CH HI POWER WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC014N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TDSON-8 FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8125 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	패키지: -	재고28,521	MOSFET (Metal Oxide)	60 V	100A (Tc)	6V, 10V	3.3V @ 120µA	104 nC @ 10 V	8125 pF @ 30 V	±20V	-	3W (Ta), 188W (Tc)	1.45mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPB016N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고2,880	MOSFET (Metal Oxide)	80 V	170A (Tc)	6V, 10V	3.8V @ 267µA	255 nC @ 10 V	12000 pF @ 40 V	±20V	-	300W (Tc)	1.65mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPL65R1K5C6SE8211ATMA1	Infineon Technologies	IPL65R1K5 - 650V AND 700V COOLMO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGLD60R070D1AUMA1	Infineon Technologies	GANFET N-CH 600V 15A LSON-8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-LSON-8-1 Package / Case: 8-LDFN Exposed Pad	패키지: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	15A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	114W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad