페이지 190 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

IRFSL4310PBF

Infineon Technologies

MOSFET N-CH 100V 130A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고5,056

MOSFET (Metal Oxide)

100V

130A (Tc)

10V

4V @ 250µA

250nC @ 10V

7670pF @ 50V

±20V

-

300W (Tc)

7 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

IPP60R099CPAAKSA1

Infineon Technologies

MOSFET N-CH 600V 31A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고6,960

MOSFET (Metal Oxide)

600V

31A (Tc)

10V

3.5V @ 1.2mA

80nC @ 10V

2800pF @ 100V

±20V

-

255W (Tc)

105 mOhm @ 18A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPI60R099CPAAKSA1

Infineon Technologies

MOSFET N-CH 60V 31A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고3,504

MOSFET (Metal Oxide)

600V

31A (Tc)

10V

3.5V @ 1.2mA

80nC @ 10V

2800pF @ 100V

±20V

-

255W (Tc)

105 mOhm @ 18A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPI60R099CPXKSA1

Infineon Technologies

MOSFET N-CH 60V 31A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고3,312

MOSFET (Metal Oxide)

600V

31A (Tc)

10V

3.5V @ 1.2mA

80nC @ 10V

2800pF @ 100V

±20V

-

255W (Tc)

99 mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPB60R060C7ATMA1

Infineon Technologies

MOSFET N-CH 600V TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

재고2,128

MOSFET (Metal Oxide)

650V

35A (Tc)

10V

4V @ 800µA

68nC @ 10V

2850pF @ 400V

±20V

-

162W (Tc)

60 mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

IRLS3036-7PPBF

Infineon Technologies

MOSFET N-CH 60V 240A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

재고112,776

MOSFET (Metal Oxide)

60V

240A (Tc)

4.5V, 10V

2.5V @ 250µA

160nC @ 4.5V

11270pF @ 50V

±16V

-

380W (Tc)

1.9 mOhm @ 180A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IPI200N25N3 G

Infineon Technologies

MOSFET N-CH 250V 64A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고4,096

MOSFET (Metal Oxide)

250V

64A (Tc)

10V

4V @ 270µA

86nC @ 10V

7100pF @ 100V

±20V

-

300W (Tc)

20 mOhm @ 64A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPC60R125C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,392

-

IPP60R060P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고5,072

-

IPA60R060P7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고7,504

-

IRFPS3815PBF

Infineon Technologies

MOSFET N-CH 150V 105A SUPER247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 441W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: SUPER-247 (TO-274AA)
Package / Case: TO-274AA

패키지: TO-274AA

재고4,480

MOSFET (Metal Oxide)

150V

105A (Tc)

10V

5V @ 250µA

390nC @ 10V

6810pF @ 25V

±30V

-

441W (Tc)

15 mOhm @ 63A, 10V

-55°C ~ 175°C (TJ)

Through Hole

SUPER-247 (TO-274AA)

TO-274AA

IPL60R065C7AUMA1

Infineon Technologies

MOSFET HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고6,656

-

IPP65R110CFDAAKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고7,824

MOSFET (Metal Oxide)

650V

31.2A (Tc)

10V

4.5V @ 1.3mA

118nC @ 10V

3240pF @ 100V

±20V

-

277.8W (Tc)

110 mOhm @ 12.7A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPB017N10N5LFATMA1

Infineon Technologies

MOSFET N-CH 100V D2PAK-7

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,488

-

SIPC30N60CFDX1SA1

Infineon Technologies

MOSFET COOL MOS 600V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,920

-

IPB407N30NATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,520

MOSFET (Metal Oxide)

300V

44A (Tc)

10V

4V @ 270µA

87nC @ 10V

7180pF @ 100V

±20V

-

300W (Tc)

40.7 mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI110N20N3GAKSA1

Infineon Technologies

MOSFET N-CH 200V 88A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고3,760

MOSFET (Metal Oxide)

200V

88A (Tc)

10V

4V @ 270µA

87nC @ 10V

7100pF @ 100V

±20V

-

300W (Tc)

11 mOhm @ 88A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

IPW65R150CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 195.3W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고6,912

MOSFET (Metal Oxide)

650V

22.4A (Tc)

10V

4.5V @ 900µA

86nC @ 10V

2340pF @ 100V

±20V

-

195.3W (Tc)

150 mOhm @ 9.3A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IRF200S234

Infineon Technologies

TRENCH_MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,144

-

IPP051N15N5AKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,592

-

IPI051N15N5AKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,024

-

IPT210N25NFDATMA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,512

-

IRLS4030PBF

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,512

MOSFET (Metal Oxide)

100V

180A (Tc)

4.5V, 10V

2.5V @ 250µA

130nC @ 4.5V

11360pF @ 50V

±16V

-

370W (Tc)

4.3 mOhm @ 110A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRFP4409

Infineon Technologies

MOSFET N-CH 300V 38A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5168pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 69 mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

패키지: TO-247-3

재고109,572

MOSFET (Metal Oxide)

300V

38A (Tc)

10V

5V @ 250µA

125nC @ 10V

5168pF @ 50V

±20V

-

341W (Tc)

69 mOhm @ 24A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

SIPC46N60C3X1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,272

-

AUIRFP4110

Infineon Technologies

MOSFET N-CH 100V 120A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

패키지: TO-247-3

재고6,384

MOSFET (Metal Oxide)

100V

120A (Tc)

10V

4V @ 250µA

210nC @ 10V

9620pF @ 50V

±20V

-

370W (Tc)

4.5 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPC90R340C3X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고2,336

-

SPW20N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고12,828

MOSFET (Metal Oxide)

650V

20.7A (Tc)

10V

5V @ 1mA

124nC @ 10V

2400pF @ 25V

±20V

-

208W (Tc)

220 mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFSL4310PBF	Infineon Technologies	MOSFET N-CH 100V 130A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고5,056	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4V @ 250µA	250nC @ 10V	7670pF @ 50V	±20V	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP60R099CPAAKSA1	Infineon Technologies	MOSFET N-CH 600V 31A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고6,960	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPI60R099CPAAKSA1	Infineon Technologies	MOSFET N-CH 60V 31A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고3,504	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	105 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPI60R099CPXKSA1	Infineon Technologies	MOSFET N-CH 60V 31A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고3,312	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	99 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB60R060C7ATMA1	Infineon Technologies	MOSFET N-CH 600V TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	재고2,128	MOSFET (Metal Oxide)	650V	35A (Tc)	10V	4V @ 800µA	68nC @ 10V	2850pF @ 400V	±20V	-	162W (Tc)	60 mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
IRLS3036-7PPBF	Infineon Technologies	MOSFET N-CH 60V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	재고112,776	MOSFET (Metal Oxide)	60V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	160nC @ 4.5V	11270pF @ 50V	±16V	-	380W (Tc)	1.9 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPI200N25N3 G	Infineon Technologies	MOSFET N-CH 250V 64A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고4,096	MOSFET (Metal Oxide)	250V	64A (Tc)	10V	4V @ 270µA	86nC @ 10V	7100pF @ 100V	±20V	-	300W (Tc)	20 mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPC60R125C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,392	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,072	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고7,504	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFPS3815PBF	Infineon Technologies	MOSFET N-CH 150V 105A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 441W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 63A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	패키지: TO-274AA	재고4,480	MOSFET (Metal Oxide)	150V	105A (Tc)	10V	5V @ 250µA	390nC @ 10V	6810pF @ 25V	±30V	-	441W (Tc)	15 mOhm @ 63A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
IPL60R065C7AUMA1	Infineon Technologies	MOSFET HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP65R110CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고7,824	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	277.8W (Tc)	110 mOhm @ 12.7A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPB017N10N5LFATMA1	Infineon Technologies	MOSFET N-CH 100V D2PAK-7 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC30N60CFDX1SA1	Infineon Technologies	MOSFET COOL MOS 600V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB407N30NATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,520	MOSFET (Metal Oxide)	300V	44A (Tc)	10V	4V @ 270µA	87nC @ 10V	7180pF @ 100V	±20V	-	300W (Tc)	40.7 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI110N20N3GAKSA1	Infineon Technologies	MOSFET N-CH 200V 88A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고3,760	MOSFET (Metal Oxide)	200V	88A (Tc)	10V	4V @ 270µA	87nC @ 10V	7100pF @ 100V	±20V	-	300W (Tc)	11 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPW65R150CFDAFKSA1	Infineon Technologies	MOSFET N-CH 650V TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고6,912	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 900µA	86nC @ 10V	2340pF @ 100V	±20V	-	195.3W (Tc)	150 mOhm @ 9.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF200S234	Infineon Technologies	TRENCH_MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,144	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP051N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,592	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI051N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,024	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT210N25NFDATMA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,512	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLS4030PBF	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,512	MOSFET (Metal Oxide)	100V	180A (Tc)	4.5V, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	±16V	-	370W (Tc)	4.3 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFP4409	Infineon Technologies	MOSFET N-CH 300V 38A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5168pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	패키지: TO-247-3	재고109,572	MOSFET (Metal Oxide)	300V	38A (Tc)	10V	5V @ 250µA	125nC @ 10V	5168pF @ 50V	±20V	-	341W (Tc)	69 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIPC46N60C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,272	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFP4110	Infineon Technologies	MOSFET N-CH 100V 120A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	패키지: TO-247-3	재고6,384	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	9620pF @ 50V	±20V	-	370W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPC90R340C3X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPW20N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고12,828	MOSFET (Metal Oxide)	650V	20.7A (Tc)	10V	5V @ 1mA	124nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	220 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3