페이지 30 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

IPP60R125CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 18A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고969

MOSFET (Metal Oxide)

600 V

18A (Tc)

10V

4.5V @ 390µA

36 nC @ 10 V

1503 pF @ 400 V

±20V

-

92W (Tc)

125mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IAUZ40N08S5N100ATMA1

Infineon Technologies

MOSFET N-CH 75V 80A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

패키지: -

재고18,810

MOSFET (Metal Oxide)

80 V

40A (Tc)

6V, 10V

3.8V @ 27µA

24.2 nC @ 10 V

1591 pF @ 40 V

±20V

-

68W (Tc)

10mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IAUS300N08S5N011TATMA1

Infineon Technologies

MOSFET N-CH 80V 300A HDSOP-16-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

패키지: -

재고2,010

MOSFET (Metal Oxide)

80 V

300A (Tj)

6V, 10V

3.8V @ 275µA

231 nC @ 10 V

16250 pF @ 40 V

±20V

-

375W (Tc)

1.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

IRFH3702TR2PBF

Infineon Technologies

MOSFET N-CH 30V 16A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3x3)
Package / Case: 8-PowerVDFN

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MOSFET (Metal Oxide)

30 V

16A (Ta), 42A (Tc)

-

2.35V @ 25µA

14 nC @ 4.5 V

1510 pF @ 15 V

-

7.1mOhm @ 16A, 10V

-

Surface Mount

8-PQFN (3x3)

8-PowerVDFN

IPTG039N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8
Package / Case: 8-PowerSMD, Gull Wing

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MOSFET (Metal Oxide)

150 V

21A (Ta), 190A (Tc)

8V, 10V

4.6V @ 243µA

93 nC @ 10 V

7300 pF @ 75 V

±20V

-

3.8W (Ta), 319W (Tc)

3.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8

8-PowerSMD, Gull Wing

ISC028N04NM5ATMA1

Infineon Technologies

40V 2.8M OPTIMOS MOSFET SUPERSO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

패키지: -

재고25,095

MOSFET (Metal Oxide)

40 V

24A (Ta), 121A (Tc)

7V, 10V

3.4V @ 30µA

38 nC @ 10 V

2700 pF @ 20 V

±20V

-

3W (Ta), 75W (Tc)

2.8mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IAUC100N10S5L054ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 101A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 64µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

100 V

101A (Tj)

4.5V, 10V

2.2V @ 64µA

53 nC @ 10 V

3744 pF @ 50 V

±20V

-

130W (Tc)

5.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

62-0258PBF

Infineon Technologies

MOSFET P-CH 30V 9.2A 8-SO

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IRF7821TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 13.6A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

30 V

13.6A (Ta)

4.5V, 10V

1V @ 250µA

14 nC @ 4.5 V

1010 pF @ 15 V

±20V

-

2.5W (Ta)

9.1mOhm @ 13A, 10V

-55°C ~ 155°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IRFC3205B

Infineon Technologies

MOSFET 55V 110A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 110A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 8mOhm @ 110A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

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MOSFET (Metal Oxide)

55 V

110A

-

8mOhm @ 110A, 10V

-

Surface Mount

Die

IPD034N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고21,240

MOSFET (Metal Oxide)

60 V

100A (Tc)

10V

4V @ 93µA

130 nC @ 10 V

11000 pF @ 30 V

±20V

-

167W (Tc)

3.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP030N10N5XKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

100 V

120A (Tc)

6V, 10V

3.8V @ 184µA

139 nC @ 10 V

10300 pF @ 50 V

±20V

-

250W (Tc)

3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

AUIRFR4105TRL

Infineon Technologies

MOSFET N-CH 55V 20A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

55 V

20A (Tc)

-

4V @ 250µA

34 nC @ 10 V

700 pF @ 25 V

-

68W (Tc)

45mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC029N025SG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

25 V

24A (Ta), 100A (Tc)

4.5V, 10V

2V @ 80µA

41 nC @ 5 V

5090 pF @ 15 V

±20V

-

2.8W (Ta), 78W (Tc)

2.9mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPP80N06S207AKSA3

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

55 V

80A (Tc)

10V

4V @ 180µA

110 nC @ 10 V

3400 pF @ 25 V

±20V

-

250W (Tc)

6.6mOhm @ 68A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IRFC3415B

Infineon Technologies

MOSFET 150V 43A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 43A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 42mOhm @ 43A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

패키지: -

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MOSFET (Metal Oxide)

150 V

43A

10V

-

42mOhm @ 43A, 10V

-

Surface Mount

Die

IPA028N04NM3SXKSA1

Infineon Technologies

TRENCH <= 40V PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

패키지: -

재고1,500

MOSFET (Metal Oxide)

40 V

89A (Tc)

10V

4V @ 95µA

120 nC @ 10 V

9500 pF @ 20 V

±20V

-

38W (Tc)

2.8mOhm @ 89A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

BSC070N10NS5SCATMA1

Infineon Technologies

MOSFET N-CH 100V 14A/82A 8SWSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Package / Case: 8-PowerWDFN

패키지: -

재고5,433

MOSFET (Metal Oxide)

100 V

14A (Ta), 82A (Tc)

6V, 10V

3.8V @ 50µA

38 nC @ 10 V

2700 pF @ 50 V

±20V

-

3W (Ta), 100W (Tc)

7mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WSON-8-2

8-PowerWDFN

AUIRFR024NTRL

Infineon Technologies

MOSFET N-CH 55V 17A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

55 V

17A (Tc)

-

4V @ 250µA

20 nC @ 10 V

370 pF @ 25 V

-

45W (Tc)

75mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP040N06NXKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

60 V

80A (Tc)

6V, 10V

3.3V @ 50µA

44 nC @ 10 V

3375 pF @ 30 V

±20V

-

3W (Ta), 107W (Tc)

4mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

AIMZHN120R020M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-14
Package / Case: TO-247-4

패키지: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

100A (Tc)

18V, 20V

5.1V @ 13.7mA

82 nC @ 20 V

2667 pF @ 800 V

+23V, -5V

-

429W (Tc)

25mOhm @ 43A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-14

TO-247-4

IAUCN10S5L094DATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

BSC882N03MSG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 34 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

34 V

22A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

55 nC @ 10 V

4300 pF @ 15 V

±20V

-

2.5W (Ta), 69W (Tc)

2.6mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

BUZ32HXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

200 V

9.5A (Tc)

10V

4V @ 1mA

-

530 pF @ 25 V

±20V

-

75W (Tc)

400mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IAUA250N04S6N006AUMA1

Infineon Technologies

MOSFET_(20V 40V) PG-HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 145µA
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-4
Package / Case: 5-PowerSFN

패키지: -

재고24,231

MOSFET (Metal Oxide)

40 V

450A (Tj)

7V, 10V

3V @ 145µA

169 nC @ 10 V

11064 pF @ 25 V

±20V

-

250W (Tc)

0.64mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-4

5-PowerSFN

IQE050N08NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-4
Package / Case: 8-PowerTDFN

패키지: -

재고27,870

MOSFET (Metal Oxide)

80 V

16A (Ta), 101A (Tc)

6V, 10V

3.8V @ 49µA

43.2 nC @ 10 V

2900 pF @ 40 V

±20V

-

2.5W (Ta), 100W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-4

8-PowerTDFN

94-2309PBF

Infineon Technologies

IC MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

IQE220N15NM5CGATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-3
Package / Case: 9-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

150 V

44A (Tc)

10V

4.6V @ 46µA

18.3 nC @ 10 V

1400 pF @ 75 V

±20V

-

2.5W (Ta), 100W (Tc)

22mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-3

9-PowerTDFN

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP60R125CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V 18A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고969	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	92W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IAUZ40N08S5N100ATMA1	Infineon Technologies	MOSFET N-CH 75V 80A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	패키지: -	재고18,810	MOSFET (Metal Oxide)	80 V	40A (Tc)	6V, 10V	3.8V @ 27µA	24.2 nC @ 10 V	1591 pF @ 40 V	±20V	-	68W (Tc)	10mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IAUS300N08S5N011TATMA1	Infineon Technologies	MOSFET N-CH 80V 300A HDSOP-16-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	패키지: -	재고2,010	MOSFET (Metal Oxide)	80 V	300A (Tj)	6V, 10V	3.8V @ 275µA	231 nC @ 10 V	16250 pF @ 40 V	±20V	-	375W (Tc)	1.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
IRFH3702TR2PBF	Infineon Technologies	MOSFET N-CH 30V 16A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3x3) Package / Case: 8-PowerVDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A (Ta), 42A (Tc)	-	2.35V @ 25µA	14 nC @ 4.5 V	1510 pF @ 15 V	-	-	-	7.1mOhm @ 16A, 10V	-	Surface Mount	8-PQFN (3x3)	8-PowerVDFN
IPTG039N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 243µA Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8 Package / Case: 8-PowerSMD, Gull Wing	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	21A (Ta), 190A (Tc)	8V, 10V	4.6V @ 243µA	93 nC @ 10 V	7300 pF @ 75 V	±20V	-	3.8W (Ta), 319W (Tc)	3.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8	8-PowerSMD, Gull Wing
ISC028N04NM5ATMA1	Infineon Technologies	40V 2.8M OPTIMOS MOSFET SUPERSO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	패키지: -	재고25,095	MOSFET (Metal Oxide)	40 V	24A (Ta), 121A (Tc)	7V, 10V	3.4V @ 30µA	38 nC @ 10 V	2700 pF @ 20 V	±20V	-	3W (Ta), 75W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IAUC100N10S5L054ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 101A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 64µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	101A (Tj)	4.5V, 10V	2.2V @ 64µA	53 nC @ 10 V	3744 pF @ 50 V	±20V	-	130W (Tc)	5.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
62-0258PBF	Infineon Technologies	MOSFET P-CH 30V 9.2A 8-SO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7821TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 13.6A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13.6A (Ta)	4.5V, 10V	1V @ 250µA	14 nC @ 4.5 V	1010 pF @ 15 V	±20V	-	2.5W (Ta)	9.1mOhm @ 13A, 10V	-55°C ~ 155°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRFC3205B	Infineon Technologies	MOSFET 55V 110A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 110A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8mOhm @ 110A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	Request a Quote	MOSFET (Metal Oxide)	55 V	110A	-	-	-	-	-	-	-	8mOhm @ 110A, 10V	-	Surface Mount	Die	Die
IPD034N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고21,240	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP030N10N5XKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 184µA Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	6V, 10V	3.8V @ 184µA	139 nC @ 10 V	10300 pF @ 50 V	±20V	-	250W (Tc)	3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AUIRFR4105TRL	Infineon Technologies	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	55 V	20A (Tc)	-	4V @ 250µA	34 nC @ 10 V	700 pF @ 25 V	-	-	68W (Tc)	45mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC029N025SG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	25 V	24A (Ta), 100A (Tc)	4.5V, 10V	2V @ 80µA	41 nC @ 5 V	5090 pF @ 15 V	±20V	-	2.8W (Ta), 78W (Tc)	2.9mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPP80N06S207AKSA3	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4V @ 180µA	110 nC @ 10 V	3400 pF @ 25 V	±20V	-	250W (Tc)	6.6mOhm @ 68A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFC3415B	Infineon Technologies	MOSFET 150V 43A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 43A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 42mOhm @ 43A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	43A	10V	-	-	-	-	-	-	42mOhm @ 43A, 10V	-	Surface Mount	Die	Die
IPA028N04NM3SXKSA1	Infineon Technologies	TRENCH <= 40V PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	패키지: -	재고1,500	MOSFET (Metal Oxide)	40 V	89A (Tc)	10V	4V @ 95µA	120 nC @ 10 V	9500 pF @ 20 V	±20V	-	38W (Tc)	2.8mOhm @ 89A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
BSC070N10NS5SCATMA1	Infineon Technologies	MOSFET N-CH 100V 14A/82A 8SWSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WSON-8-2 Package / Case: 8-PowerWDFN	패키지: -	재고5,433	MOSFET (Metal Oxide)	100 V	14A (Ta), 82A (Tc)	6V, 10V	3.8V @ 50µA	38 nC @ 10 V	2700 pF @ 50 V	±20V	-	3W (Ta), 100W (Tc)	7mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WSON-8-2	8-PowerWDFN
AUIRFR024NTRL	Infineon Technologies	MOSFET N-CH 55V 17A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	55 V	17A (Tc)	-	4V @ 250µA	20 nC @ 10 V	370 pF @ 25 V	-	-	45W (Tc)	75mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP040N06NXKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	6V, 10V	3.3V @ 50µA	44 nC @ 10 V	3375 pF @ 30 V	±20V	-	3W (Ta), 107W (Tc)	4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AIMZHN120R020M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-14 Package / Case: TO-247-4	패키지: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	100A (Tc)	18V, 20V	5.1V @ 13.7mA	82 nC @ 20 V	2667 pF @ 800 V	+23V, -5V	-	429W (Tc)	25mOhm @ 43A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-14	TO-247-4
IAUCN10S5L094DATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC882N03MSG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	34 V	22A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	55 nC @ 10 V	4300 pF @ 15 V	±20V	-	2.5W (Ta), 69W (Tc)	2.6mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BUZ32HXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9.5A (Tc)	10V	4V @ 1mA	-	530 pF @ 25 V	±20V	-	75W (Tc)	400mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IAUA250N04S6N006AUMA1	Infineon Technologies	MOSFET_(20V 40V) PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 450A (Tj) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 145µA Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-4 Package / Case: 5-PowerSFN	패키지: -	재고24,231	MOSFET (Metal Oxide)	40 V	450A (Tj)	7V, 10V	3V @ 145µA	169 nC @ 10 V	11064 pF @ 25 V	±20V	-	250W (Tc)	0.64mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-4	5-PowerSFN
IQE050N08NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-4 Package / Case: 8-PowerTDFN	패키지: -	재고27,870	MOSFET (Metal Oxide)	80 V	16A (Ta), 101A (Tc)	6V, 10V	3.8V @ 49µA	43.2 nC @ 10 V	2900 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-4	8-PowerTDFN
94-2309PBF	Infineon Technologies	IC MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE220N15NM5CGATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-3 Package / Case: 9-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	4.6V @ 46µA	18.3 nC @ 10 V	1400 pF @ 75 V	±20V	-	2.5W (Ta), 100W (Tc)	22mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-3	9-PowerTDFN