페이지 47 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

SPW11N60S5

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-21
Package / Case: TO-247-3

패키지: -

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MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

5.5V @ 500µA

54 nC @ 10 V

1460 pF @ 25 V

±20V

-

125W (Tc)

380mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-21

TO-247-3

IRFC7314B

Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

±12V

-

ISC010N06NM5ATMA1

Infineon Technologies

OPTIMOS5 60 V POWER MOSFET IN SU

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

패키지: -

재고10,725

MOSFET (Metal Oxide)

60 V

39A (Ta), 330A (Tc)

6V, 10V

3.3V @ 147µA

143 nC @ 10 V

11000 pF @ 30 V

±20V

-

3W (Ta), 214W (Tc)

1.05mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IPB054N08N3GATMA1

Infineon Technologies

MOSFET N-CH 80V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고8,664

MOSFET (Metal Oxide)

80 V

80A (Tc)

6V, 10V

3.5V @ 90µA

69 nC @ 10 V

4750 pF @ 40 V

±20V

-

150W (Tc)

5.4mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IAUCN04S7N020ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

패키지: -

재고3,000

MOSFET (Metal Oxide)

40 V

-

10V

-

24 nC @ 10 V

-

-55°C ~ 175°C

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

IPP034N08N5XKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

80 V

120A (Tc)

6V, 10V

3.8V @ 108µA

87 nC @ 10 V

6240 pF @ 40 V

±20V

-

167W (Tc)

3.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPQC60R010S7AXTMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22
Package / Case: 22-PowerBSOP Module

패키지: -

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MOSFET (Metal Oxide)

600 V

50A (Tc)

12V

4.5V @ 3.08mA

318 nC @ 12 V

-

±20V

-

694W (Tc)

10mOhm @ 50A, 12V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22

22-PowerBSOP Module

IPZA60R080P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 37A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 129W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

패키지: -

재고9

MOSFET (Metal Oxide)

600 V

37A (Tc)

10V

4V @ 590µA

51 nC @ 10 V

2180 pF @ 400 V

±20V

-

129W (Tc)

80mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IMW120R007M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: -

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SiCFET (Silicon Carbide)

1200 V

225A (Tc)

15V, 18V

5.2V @ 47mA

220 nC @ 18 V

9170 nF @ 25 V

+20V, -5V

-

750W (Tc)

9.9mOhm @ 108A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IRF7201TRPBFXTMA1

Infineon Technologies

PLANAR <=40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8-902
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

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MOSFET (Metal Oxide)

30 V

7.3A (Tc)

4.5V, 10V

1V @ 250µA

28 nC @ 10 V

550 pF @ 25 V

±20V

-

2.5W (Tc)

30mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8-902

8-SOIC (0.154", 3.90mm Width)

IPDQ60R022S7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

패키지: -

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MOSFET (Metal Oxide)

600 V

24A (Tc)

12V

4.5V @ 1.44mA

150 nC @ 12 V

5639 pF @ 300 V

±20V

-

416W (Tc)

22mOhm @ 23A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPB042N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고113,505

MOSFET (Metal Oxide)

100 V

100A (Tc)

6V, 10V

3.5V @ 150µA

117 nC @ 10 V

8410 pF @ 50 V

±20V

-

214W (Tc)

4.2mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPP60R160P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 20A TO220-3-1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4V @ 350µA

31 nC @ 10 V

1317 pF @ 400 V

±20V

-

81W (Tc)

160mOhm @ 6.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BSZ240N12NS3GATMA1

Infineon Technologies

MOSFET N-CH 120V 37A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

패키지: -

재고11,250

MOSFET (Metal Oxide)

120 V

37A (Tc)

10V

4V @ 35µA

27 nC @ 10 V

1900 pF @ 60 V

±20V

-

66W (Tc)

24mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

AIMZH120R030M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

패키지: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

69A (Tc)

18V, 20V

5.1V @ 8.6mA

57 nC @ 20 V

1738 pF @ 800 V

+23V, -5V

-

326W (Tc)

38mOhm @ 27A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-11

TO-247-4

IQE006NE2LM5CGATMA1

Infineon Technologies

MOSFET N-CH 25V 41A/298A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

패키지: -

재고14,625

MOSFET (Metal Oxide)

25 V

41A (Ta), 298A (Tc)

-

2V @ 250µA

82.1 nC @ 10 V

5453 pF @ 12 V

±16V

-

2.1W (Ta), 89W (Tc)

650mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Through Hole

IPAK (TO-251AA)

TO-251-3 Short Leads, IPAK, TO-251AA

IQE022N06LM5CGATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-3
Package / Case: 9-PowerTDFN

패키지: -

재고10,725

MOSFET (Metal Oxide)

60 V

24A (Ta), 151A (Tc)

4.5V, 10V

2.3V @ 48µA

53 nC @ 10 V

4420 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

2.2mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-3

9-PowerTDFN

IPC60R070C6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IPDQ60R075CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

패키지: -

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MOSFET (Metal Oxide)

600 V

-

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IPB60R950C6ATMA1

Infineon Technologies

MOSFET N-CH 600V 4.4A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

600 V

4.4A (Tc)

10V

3.5V @ 130µA

13 nC @ 10 V

280 pF @ 100 V

±20V

-

37W (Tc)

950mOhm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AUIRFS4010TRL

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

100 V

180A (Tc)

-

4V @ 250µA

215 nC @ 10 V

9575 pF @ 50 V

-

375W (Tc)

4.7mOhm @ 106A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB017N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 180A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

패키지: -

재고27,000

MOSFET (Metal Oxide)

60 V

180A (Tc)

10V

4V @ 196µA

275 nC @ 10 V

23000 pF @ 30 V

±20V

-

250W (Tc)

1.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2PAK (6 Leads + Tab)

BSZ0945NDXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

IPL60R285P7AUMA1

Infineon Technologies

MOSFET N-CH 600V 13A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 59W (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

패키지: -

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MOSFET (Metal Oxide)

600 V

13A (Tc)

10V

4V @ 190µA

18 nC @ 10 V

761 pF @ 400 V

±20V

-

59W (Tc)

285mOhm @ 3.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IPB029N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고2,439

MOSFET (Metal Oxide)

60 V

26A (Ta), 120A (Tc)

6V, 10V

3.3V @ 80µA

102 nC @ 10 V

4600 pF @ 30 V

±20V

-

3.8W (Ta), 150W (Tc)

2.9mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRFR3711ZCTRPBF

Infineon Technologies

MOSFET N-CH 20V 93A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

20 V

93A (Tc)

-

2.45V @ 250µA

27 nC @ 4.5 V

2160 pF @ 10 V

-

5.7mOhm @ 15A, 10V

-

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IQE036N08NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

SPD07N60C3

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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MOSFET (Metal Oxide)

600 V

7.3A (Tc)

10V

3.9V @ 350µA

27 nC @ 10 V

790 pF @ 25 V

±20V

-

83W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPW11N60S5	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-21 Package / Case: TO-247-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	5.5V @ 500µA	54 nC @ 10 V	1460 pF @ 25 V	±20V	-	125W (Tc)	380mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-21	TO-247-3
IRFC7314B	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	±12V	-	-	-	-	-	-	-
ISC010N06NM5ATMA1	Infineon Technologies	OPTIMOS5 60 V POWER MOSFET IN SU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	패키지: -	재고10,725	MOSFET (Metal Oxide)	60 V	39A (Ta), 330A (Tc)	6V, 10V	3.3V @ 147µA	143 nC @ 10 V	11000 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	1.05mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IPB054N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고8,664	MOSFET (Metal Oxide)	80 V	80A (Tc)	6V, 10V	3.5V @ 90µA	69 nC @ 10 V	4750 pF @ 40 V	±20V	-	150W (Tc)	5.4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IAUCN04S7N020ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	패키지: -	재고3,000	MOSFET (Metal Oxide)	40 V	-	10V	-	24 nC @ 10 V	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IPP034N08N5XKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	3.8V @ 108µA	87 nC @ 10 V	6240 pF @ 40 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPQC60R010S7AXTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	4.5V @ 3.08mA	318 nC @ 12 V	-	±20V	-	694W (Tc)	10mOhm @ 50A, 12V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IPZA60R080P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 37A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	패키지: -	재고9	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	4V @ 590µA	51 nC @ 10 V	2180 pF @ 400 V	±20V	-	129W (Tc)	80mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IMW120R007M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 47mA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	225A (Tc)	15V, 18V	5.2V @ 47mA	220 nC @ 18 V	9170 nF @ 25 V	+20V, -5V	-	750W (Tc)	9.9mOhm @ 108A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF7201TRPBFXTMA1	Infineon Technologies	PLANAR <=40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8-902 Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7.3A (Tc)	4.5V, 10V	1V @ 250µA	28 nC @ 10 V	550 pF @ 25 V	±20V	-	2.5W (Tc)	30mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8-902	8-SOIC (0.154", 3.90mm Width)
IPDQ60R022S7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	12V	4.5V @ 1.44mA	150 nC @ 12 V	5639 pF @ 300 V	±20V	-	416W (Tc)	22mOhm @ 23A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPB042N10N3GATMA1	Infineon Technologies	MOSFET N-CH 100V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고113,505	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	3.5V @ 150µA	117 nC @ 10 V	8410 pF @ 50 V	±20V	-	214W (Tc)	4.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R160P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 20A TO220-3-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4V @ 350µA	31 nC @ 10 V	1317 pF @ 400 V	±20V	-	81W (Tc)	160mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BSZ240N12NS3GATMA1	Infineon Technologies	MOSFET N-CH 120V 37A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	패키지: -	재고11,250	MOSFET (Metal Oxide)	120 V	37A (Tc)	10V	4V @ 35µA	27 nC @ 10 V	1900 pF @ 60 V	±20V	-	66W (Tc)	24mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
AIMZH120R030M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	패키지: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	69A (Tc)	18V, 20V	5.1V @ 8.6mA	57 nC @ 20 V	1738 pF @ 800 V	+23V, -5V	-	326W (Tc)	38mOhm @ 27A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-11	TO-247-4
IQE006NE2LM5CGATMA1	Infineon Technologies	MOSFET N-CH 25V 41A/298A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251AA) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	패키지: -	재고14,625	MOSFET (Metal Oxide)	25 V	41A (Ta), 298A (Tc)	-	2V @ 250µA	82.1 nC @ 10 V	5453 pF @ 12 V	±16V	-	2.1W (Ta), 89W (Tc)	650mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IQE022N06LM5CGATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-3 Package / Case: 9-PowerTDFN	패키지: -	재고10,725	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.3V @ 48µA	53 nC @ 10 V	4420 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-3	9-PowerTDFN
IPC60R070C6UNSAWNX6SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPDQ60R075CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPB60R950C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 4.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.4A (Tc)	10V	3.5V @ 130µA	13 nC @ 10 V	280 pF @ 100 V	±20V	-	37W (Tc)	950mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AUIRFS4010TRL	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	180A (Tc)	-	4V @ 250µA	215 nC @ 10 V	9575 pF @ 50 V	-	-	375W (Tc)	4.7mOhm @ 106A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB017N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	패키지: -	재고27,000	MOSFET (Metal Oxide)	60 V	180A (Tc)	10V	4V @ 196µA	275 nC @ 10 V	23000 pF @ 30 V	±20V	-	250W (Tc)	1.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
BSZ0945NDXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL60R285P7AUMA1	Infineon Technologies	MOSFET N-CH 600V 13A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4V @ 190µA	18 nC @ 10 V	761 pF @ 400 V	±20V	-	59W (Tc)	285mOhm @ 3.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPB029N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고2,439	MOSFET (Metal Oxide)	60 V	26A (Ta), 120A (Tc)	6V, 10V	3.3V @ 80µA	102 nC @ 10 V	4600 pF @ 30 V	±20V	-	3.8W (Ta), 150W (Tc)	2.9mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFR3711ZCTRPBF	Infineon Technologies	MOSFET N-CH 20V 93A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	20 V	93A (Tc)	-	2.45V @ 250µA	27 nC @ 4.5 V	2160 pF @ 10 V	-	-	-	5.7mOhm @ 15A, 10V	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IQE036N08NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPD07N60C3	Infineon Technologies	MOSFET N-CH 600V 7.3A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.9V @ 350µA	27 nC @ 10 V	790 pF @ 25 V	±20V	-	83W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63