페이지 67 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

SPA03N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 3.2A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

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MOSFET (Metal Oxide)

650 V

3.2A (Tc)

10V

3.9V @ 135µA

17 nC @ 10 V

400 pF @ 25 V

±20V

-

29.7W (Tc)

1.4Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IPP096N03LGHKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

30 V

35A (Tc)

4.5V, 10V

2.2V @ 250µA

15 nC @ 10 V

1600 pF @ 15 V

±20V

-

42W (Tc)

9.6mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPU06N03LZG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-21
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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MOSFET (Metal Oxide)

25 V

50A (Tc)

4.5V, 10V

2V @ 40µA

22 nC @ 5 V

2783 pF @ 15 V

±20V

-

83W (Tc)

5.1mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO251-3-21

TO-251-3 Short Leads, IPak, TO-251AA

IPT65R155CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

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-

650 V

-

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IPC60R380E6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

BSC430N25NSFDATMA1

Infineon Technologies

MOSFET N-CH 250V TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

패키지: -

재고27,393

MOSFET (Metal Oxide)

250 V

36A (Tc)

-

±20V

-

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IPC313N10N3RX1SA2

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

BSZ065N03LSATMA1

Infineon Technologies

MOSFET N-CH 30V 12A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

패키지: -

재고77,838

MOSFET (Metal Oxide)

30 V

12A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

10 nC @ 10 V

670 pF @ 15 V

±20V

-

2.1W (Ta), 26W (Tc)

6.5mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IQE220N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-5
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

150 V

7A (Ta), 44A (Tc)

8V, 10V

4.6V @ 46µA

18 nC @ 10 V

1400 pF @ 75 V

±20V

-

2.5W (Ta), 100W (Tc)

22mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-5

8-PowerTDFN

BSZ0911LSATMA1

Infineon Technologies

MOSFET N-CH 30V 12A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

패키지: -

재고88,755

MOSFET (Metal Oxide)

30 V

12A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

10 nC @ 10 V

670 pF @ 15 V

±20V

-

7mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPD60R280PFD7SAUMA1

Infineon Technologies

MOSFET N-CH 600V 12A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-344
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고5,043

MOSFET (Metal Oxide)

600 V

12A (Tc)

10V

4.5V @ 180µA

15.3 nC @ 10 V

656 pF @ 400 V

±20V

-

51W (Tc)

280mOhm @ 3.6A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-344

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP041N12N3GXKSA1

Infineon Technologies

MOSFET N-CH 120V 120A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고1,707

MOSFET (Metal Oxide)

120 V

120A (Tc)

10V

4V @ 270µA

211 nC @ 10 V

13800 pF @ 60 V

±20V

-

300W (Tc)

4.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

AUIRF9540N

Infineon Technologies

MOSFET P-CH 100V 23A TO220

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: -

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MOSFET (Metal Oxide)

100 V

23A (Tc)

10V

4V @ 250µA

97 nC @ 10 V

1300 pF @ 25 V

±20V

-

140W (Tc)

117mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IMBG65R048M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고2,727

SiCFET (Silicon Carbide)

650 V

45A (Tc)

18V

5.7V @ 6mA

33 nC @ 18 V

1118 pF @ 400 V

+23V, -5V

-

183W (Tc)

64mOhm @ 20.1A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

AUXNSF2804STRL7P

Infineon Technologies

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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-

IPP60R190P6XKSA1

Infineon Technologies

MOSFET N-CH 600V 20.2A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고9,558

MOSFET (Metal Oxide)

600 V

20.2A (Tc)

10V

4.5V @ 630µ

11 nC @ 10 V

1750 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 7.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPB65R190CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 17.5A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

650 V

17.5A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB65R190CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 17.5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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MOSFET (Metal Oxide)

650 V

17.5A (Tc)

10V

4.5V @ 730µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB039N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 160A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

패키지: -

재고50,184

MOSFET (Metal Oxide)

100 V

160A (Tc)

6V, 10V

3.5V @ 160µA

117 nC @ 10 V

8410 pF @ 50 V

±20V

-

214W (Tc)

3.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2PAK (6 Leads + Tab)

IPDD60R190G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 13A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

패키지: -

재고501

MOSFET (Metal Oxide)

600 V

13A (Tc)

10V

4V @ 210µA

18 nC @ 10 V

718 pF @ 400 V

±20V

-

76W (Tc)

190mOhm @ 4.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-10-1

10-PowerSOP Module

ISZ0501NLSATMA1

Infineon Technologies

25V, N-CH MOSFET, LOGIC LEVEL, P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-25
Package / Case: 8-PowerTDFN

패키지: -

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MOSFET (Metal Oxide)

25 V

40A (Tc)

4.5V, 10V

2V @ 250µA

13.6 nC @ 10 V

910 pF @ 12 V

±16V

-

30W (Tc)

3.9mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-25

8-PowerTDFN

IPP65R190CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 17.5A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고4,200

MOSFET (Metal Oxide)

650 V

17.5A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

BSC005N03LS5IATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 433A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

패키지: -

재고13,329

MOSFET (Metal Oxide)

30 V

42A (Ta), 433A (Tc)

4.5V, 10V

2V @ 10mA

128 nC @ 10 V

8000 pF @ 15 V

±20V

-

3W (Ta), 188W (Tc)

0.55mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPB60R299CPATMA1

Infineon Technologies

MOSFET N-CH 600V 11A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

Request a Quote

MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

3.5V @ 440µA

29 nC @ 10 V

1100 pF @ 100 V

±20V

-

96W (Tc)

299mOhm @ 6.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC0588NSIATMA1

Infineon Technologies

BSC0588- N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

-

IRF7416QTRPBF

Infineon Technologies

MOSFET P-CH 30V 10A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

Request a Quote

MOSFET (Metal Oxide)

30 V

10A (Ta)

-

1V @ 250µA

92 nC @ 10 V

1700 pF @ 25 V

-

20mOhm @ 5.6A, 10V

-

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IPF017N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 259A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

재고4,800

MOSFET (Metal Oxide)

80 V

259A (Tc)

6V, 10V

3.8V @ 194µA

186 nC @ 10 V

8700 pF @ 40 V

±20V

-

250W (Tc)

1.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPP076N12N3GXKSA1

Infineon Technologies

MOSFET N-CH 120V 100A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

패키지: -

재고753

MOSFET (Metal Oxide)

120 V

100A (Tc)

10V

4V @ 130µA

101 nC @ 10 V

6640 pF @ 60 V

±20V

-

188W (Tc)

7.6mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPA03N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 3.2A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	3.2A (Tc)	10V	3.9V @ 135µA	17 nC @ 10 V	400 pF @ 25 V	±20V	-	29.7W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IPP096N03LGHKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	15 nC @ 10 V	1600 pF @ 15 V	±20V	-	42W (Tc)	9.6mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPU06N03LZG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-21 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: -	Request a Quote	MOSFET (Metal Oxide)	25 V	50A (Tc)	4.5V, 10V	2V @ 40µA	22 nC @ 5 V	2783 pF @ 15 V	±20V	-	83W (Tc)	5.1mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3-21	TO-251-3 Short Leads, IPak, TO-251AA
IPT65R155CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	패키지: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPC60R380E6UNSAWNX6SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC430N25NSFDATMA1	Infineon Technologies	MOSFET N-CH 250V TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	패키지: -	재고27,393	MOSFET (Metal Oxide)	250 V	36A (Tc)	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IPC313N10N3RX1SA2	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ065N03LSATMA1	Infineon Technologies	MOSFET N-CH 30V 12A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	패키지: -	재고77,838	MOSFET (Metal Oxide)	30 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	10 nC @ 10 V	670 pF @ 15 V	±20V	-	2.1W (Ta), 26W (Tc)	6.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IQE220N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-5 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	150 V	7A (Ta), 44A (Tc)	8V, 10V	4.6V @ 46µA	18 nC @ 10 V	1400 pF @ 75 V	±20V	-	2.5W (Ta), 100W (Tc)	22mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-5	8-PowerTDFN
BSZ0911LSATMA1	Infineon Technologies	MOSFET N-CH 30V 12A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	패키지: -	재고88,755	MOSFET (Metal Oxide)	30 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	10 nC @ 10 V	670 pF @ 15 V	±20V	-	-	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPD60R280PFD7SAUMA1	Infineon Technologies	MOSFET N-CH 600V 12A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-344 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고5,043	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4.5V @ 180µA	15.3 nC @ 10 V	656 pF @ 400 V	±20V	-	51W (Tc)	280mOhm @ 3.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-344	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP041N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 120A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고1,707	MOSFET (Metal Oxide)	120 V	120A (Tc)	10V	4V @ 270µA	211 nC @ 10 V	13800 pF @ 60 V	±20V	-	300W (Tc)	4.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AUIRF9540N	Infineon Technologies	MOSFET P-CH 100V 23A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: -	Request a Quote	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	4V @ 250µA	97 nC @ 10 V	1300 pF @ 25 V	±20V	-	140W (Tc)	117mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IMBG65R048M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고2,727	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V	5.7V @ 6mA	33 nC @ 18 V	1118 pF @ 400 V	+23V, -5V	-	183W (Tc)	64mOhm @ 20.1A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AUXNSF2804STRL7P	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R190P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 20.2A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고9,558	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	4.5V @ 630µ	11 nC @ 10 V	1750 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPB65R190CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 17.5A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB65R190CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 17.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 730µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB039N10N3GATMA1	Infineon Technologies	MOSFET N-CH 100V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	패키지: -	재고50,184	MOSFET (Metal Oxide)	100 V	160A (Tc)	6V, 10V	3.5V @ 160µA	117 nC @ 10 V	8410 pF @ 50 V	±20V	-	214W (Tc)	3.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IPDD60R190G7XTMA1	Infineon Technologies	MOSFET N-CH 600V 13A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	패키지: -	재고501	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4V @ 210µA	18 nC @ 10 V	718 pF @ 400 V	±20V	-	76W (Tc)	190mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
ISZ0501NLSATMA1	Infineon Technologies	25V, N-CH MOSFET, LOGIC LEVEL, P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-25 Package / Case: 8-PowerTDFN	패키지: -	Request a Quote	MOSFET (Metal Oxide)	25 V	40A (Tc)	4.5V, 10V	2V @ 250µA	13.6 nC @ 10 V	910 pF @ 12 V	±16V	-	30W (Tc)	3.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-25	8-PowerTDFN
IPP65R190CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 17.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고4,200	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
BSC005N03LS5IATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 433A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	패키지: -	재고13,329	MOSFET (Metal Oxide)	30 V	42A (Ta), 433A (Tc)	4.5V, 10V	2V @ 10mA	128 nC @ 10 V	8000 pF @ 15 V	±20V	-	3W (Ta), 188W (Tc)	0.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPB60R299CPATMA1	Infineon Technologies	MOSFET N-CH 600V 11A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	3.5V @ 440µA	29 nC @ 10 V	1100 pF @ 100 V	±20V	-	96W (Tc)	299mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC0588NSIATMA1	Infineon Technologies	BSC0588- N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7416QTRPBF	Infineon Technologies	MOSFET P-CH 30V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	-	1V @ 250µA	92 nC @ 10 V	1700 pF @ 25 V	-	-	-	20mOhm @ 5.6A, 10V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPF017N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 259A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 194µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	재고4,800	MOSFET (Metal Oxide)	80 V	259A (Tc)	6V, 10V	3.8V @ 194µA	186 nC @ 10 V	8700 pF @ 40 V	±20V	-	250W (Tc)	1.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPP076N12N3GXKSA1	Infineon Technologies	MOSFET N-CH 120V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	패키지: -	재고753	MOSFET (Metal Oxide)	120 V	100A (Tc)	10V	4V @ 130µA	101 nC @ 10 V	6640 pF @ 60 V	±20V	-	188W (Tc)	7.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3