페이지 4 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  4/52
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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIGC08T60EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC08T60EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIKBE50N65RF5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 96A TO263-7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 326 W
  • Switching Energy: 0.12mJ (on), 0.09mJ (off)
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 16.8ns/136ns
  • Test Condition: 400V, 25A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: PG-TO263-7-U04
패키지: -
재고201
650 V
96 A
150 A
2.1V @ 15V, 50A
326 W
0.12mJ (on), 0.09mJ (off)
Standard
108 nC
16.8ns/136ns
400V, 25A, 9Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-U04
IKN01N60RC2ATMA1
Infineon Technologies

IGBT 600V 2.2A SOT223-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 2.2 A
  • Current - Collector Pulsed (Icm): 3 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
  • Power - Max: 5.1 W
  • Switching Energy: 25.1µJ (on), 13.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 9 nC
  • Td (on/off) @ 25°C: 5.6ns/80ns
  • Test Condition: 400V, 1A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 59.5 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-3
패키지: -
재고8,133
600 V
2.2 A
3 A
2.3V @ 15V, 1A
5.1 W
25.1µJ (on), 13.5µJ (off)
Standard
9 nC
5.6ns/80ns
400V, 1A, 49Ohm, 15V
59.5 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-3
SIGC61T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKW40N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 76A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
  • Power - Max: 230.8 W
  • Switching Energy: 1.05mJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 235 nC
  • Td (on/off) @ 25°C: 20ns/310ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고2,730
650 V
76 A
120 A
1.65V @ 15V, 40A
230.8 W
1.05mJ (on), 590µJ (off)
Standard
235 nC
20ns/310ns
400V, 40A, 10Ohm, 15V
85 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGC11T120T8LX1SA1
Infineon Technologies

IGBT 1200V 8A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
1200 V
-
24 A
2.07V @ 15V, 8A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKW50N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 82 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 428 W
  • Switching Energy: 2.8mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 29ns/170ns
  • Test Condition: 600V, 50A, 2.3Ohm, 15V
  • Reverse Recovery Time (trr): 165 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고1,347
1200 V
82 A
150 A
2V @ 15V, 50A
428 W
2.8mJ (on), 2.2mJ (off)
Standard
290 nC
29ns/170ns
600V, 50A, 2.3Ohm, 15V
165 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IQFH39N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC28T60SEX1SA2
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
2.05V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIMDQ75R040M1HXUMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKZA40N120CS7XKSA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고609
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKFW60N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 77A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 77 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 138 W
  • Switching Energy: 1.23mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 20ns/127ns
  • Test Condition: 400V, 50A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): 77 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
패키지: -
재고15
650 V
77 A
200 A
1.7V @ 15V, 50A
138 W
1.23mJ (on), 550µJ (off)
Standard
120 nC
20ns/127ns
400V, 50A, 8.2Ohm, 15V
77 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IKZA75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 240µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
패키지: -
재고858
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
240µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IKW50N60TAFKSA1
Infineon Technologies

IGBT TRENCH/FS 600V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333 W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 143 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
Request a Quote
600 V
80 A
150 A
2V @ 15V, 50A
333 W
2.6mJ
Standard
310 nC
26ns/299ns
400V, 50A, 7Ohm, 15V
143 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
AIGB40N65H5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
재고195
650 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKU04N60R
Infineon Technologies

IGBT TRENCH 600V 8A TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75 W
  • Switching Energy: 240µJ
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: PG-TO251-3
패키지: -
Request a Quote
600 V
8 A
12 A
2.1V @ 15V, 4A
75 W
240µJ
Standard
27 nC
14ns/146ns
400V, 4A, 43Ohm, 15V
43 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IKW75N65ET7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 333 W
  • Switching Energy: 2.17mJ (on), 1.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 435 nC
  • Td (on/off) @ 25°C: 28ns/310ns
  • Test Condition: 400V, 75A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고1,362
650 V
80 A
225 A
1.65V @ 15V, 75A
333 W
2.17mJ (on), 1.23mJ (off)
Standard
435 nC
28ns/310ns
400V, 75A, 4.7Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IPF011N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW75N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
  • Power - Max: 395 W
  • Switching Energy: 450µJ (on), 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 164 nC
  • Td (on/off) @ 25°C: 22ns/145ns
  • Test Condition: 400V, 75A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고630
650 V
80 A
300 A
1.7V @ 15V, 75A
395 W
450µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SIGC81T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC81T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKW50N60TFKSA1
Infineon Technologies

IGBT TRENCH FS 600V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333 W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 143 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
재고8,511
600 V
80 A
150 A
2V @ 15V, 50A
333 W
2.6mJ
Standard
310 nC
26ns/299ns
400V, 50A, 7Ohm, 15V
143 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IKQ75N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 82 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 549 W
  • Switching Energy: 5.28mJ (on), 1.76mJ (off)
  • Input Type: Standard
  • Gate Charge: 518 nC
  • Td (on/off) @ 25°C: 56ns/470ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 149 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-U01
패키지: -
재고1,644
1200 V
82 A
300 A
2.15V @ 15V, 75A
549 W
5.28mJ (on), 1.76mJ (off)
Standard
518 nC
56ns/470ns
-
149 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-U01
IHW40N120R5XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
  • Power - Max: 394 W
  • Switching Energy: 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: -/420ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고1,404
1200 V
80 A
120 A
1.85V @ 15V, 40A
394 W
1.6mJ (off)
Standard
310 nC
-/420ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKWH100N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 140A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
  • Power - Max: 427 W
  • Switching Energy: 3.58mJ (on), 2.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 199 nC
  • Td (on/off) @ 25°C: 32ns/240ns
  • Test Condition: 400V, 100A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 106 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
패키지: -
재고648
650 V
140 A
400 A
1.65V @ 15V, 100A
427 W
3.58mJ (on), 2.37mJ (off)
Standard
199 nC
32ns/240ns
400V, 100A, 10Ohm, 15V
106 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
SIGC42T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
SIGC08T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
1.9V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die