페이지 5 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  5/52
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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKFW50N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 74A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 127 W
  • Switching Energy: 860µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 19ns/130ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 69 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
패키지: -
재고642
650 V
74 A
160 A
1.7V @ 15V, 40A
127 W
860µJ (on), 400µJ (off)
Standard
95 nC
19ns/130ns
400V, 40A, 10Ohm, 15V
69 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
SIGC61T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC61T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC156T60NR2CX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 180ns/285ns
  • Test Condition: 300V, 200A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
200 A
600 A
2.5V @ 15V, 200A
-
-
Standard
-
180ns/285ns
300V, 200A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKW40N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 82 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
  • Power - Max: 330 W
  • Switching Energy: 1.69mJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 36ns/336ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 120 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-U06
패키지: -
Request a Quote
1200 V
82 A
160 A
2.15V @ 15V, 40A
330 W
1.69mJ (on), 920µJ (off)
Standard
290 nC
36ns/336ns
-
120 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-U06
IKW15N120BH6XKSA1
Infineon Technologies

IGBT 1200 V 15A TO247-3-46

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 200 W
  • Switching Energy: 700µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 18ns/240ns
  • Test Condition: 600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr): 340 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
패키지: -
Request a Quote
1200 V
30 A
60 A
2.3V @ 15V, 15A
200 W
700µJ (on), 550µJ (off)
Standard
92 nC
18ns/240ns
600V, 15A, 22Ohm, 15V
340 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-41
IKB40N65ES5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 79A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 79 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: 860µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 19ns/130ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 73 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: -
재고27,576
650 V
79 A
160 A
1.74V @ 15V, 40A
230 W
860µJ (on), 400µJ (off)
Standard
95 nC
19ns/130ns
400V, 40A, 10Ohm, 15V
73 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
AIMDQ75R008M1HXUMA1
Infineon Technologies

AUTOMOTIVE_SICMOS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGC50B60PB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
-
-
1.65V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IRGC50B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
-
1.35V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IRG4IBC30WPBF-INF
Infineon Technologies

COPACK IGBT W/ULTRAFAST SOFT REC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 17 A
  • Current - Collector Pulsed (Icm): 92 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 45 W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51 nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO220 Full Pack
패키지: -
Request a Quote
600 V
17 A
92 A
2.7V @ 15V, 12A
45 W
130µJ (on), 130µJ (off)
Standard
51 nC
25ns/99ns
480V, 12A, 23Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO220 Full Pack
SGW20N60HS
Infineon Technologies

IGBT NPT 600V 36A TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 36 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: 178 W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 100 nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
Request a Quote
600 V
36 A
80 A
3.15V @ 15V, 20A
178 W
690µJ
Standard
100 nC
18ns/207ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IQFH47N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IQFH55N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC42T60NCX1SA6
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
SIGC42T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
SIGC42T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
SIGC42T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 43ns/130ns
  • Test Condition: 300V, 50A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
43ns/130ns
300V, 50A, 3.3Ohm, 15V
-
-55°C ~ 150°C
Surface Mount
Die
Die
IHW30N120R5XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 235 nC
  • Td (on/off) @ 25°C: -/330ns
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고621
1200 V
60 A
90 A
1.85V @ 15V, 30A
330 W
1.1mJ (off)
Standard
235 nC
-/330ns
600V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
ISC119N20NM6ATMA1
Infineon Technologies

IGBT TRENCH 100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGP20N65H5XKSA1
Infineon Technologies

IGBT 650V 42A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 42 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125 W
  • Switching Energy: 170µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48 nC
  • Td (on/off) @ 25°C: 18ns/156ns
  • Test Condition: 400V, 10A, 32Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
패키지: -
재고1,308
650 V
42 A
60 A
2.1V @ 15V, 20A
125 W
170µJ (on), 60µJ (off)
Standard
48 nC
18ns/156ns
400V, 10A, 32Ohm, 15V
-
-
Through Hole
TO-220-3
PG-TO220-3-1
IGD15N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 57.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
  • Power - Max: 100 W
  • Switching Energy: 230µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 30ns/117ns
  • Test Condition: 400V, 11.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고1,944
650 V
30 A
57.5 A
1.9V @ 15V, 11.5A
100 W
230µJ (on), 110µJ (off)
Standard
37 nC
30ns/117ns
400V, 11.5A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IKY150N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
  • Power - Max: 621 W
  • Switching Energy: 2.3mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 300 nC
  • Td (on/off) @ 25°C: 44ns/343ns
  • Test Condition: 400V, 150A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-2
패키지: -
재고624
650 V
160 A
600 A
1.65V @ 15V, 150A
621 W
2.3mJ (on), 2.9mJ (off)
Standard
300 nC
44ns/343ns
400V, 150A, 10Ohm, 15V
65 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-2
IKD15N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 28A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 28 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 115.4 W
  • Switching Energy: 570µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 72 nC
  • Td (on/off) @ 25°C: 18ns/374ns
  • Test Condition: 400V, 15A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 129 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고13,224
600 V
28 A
45 A
2.3V @ 15V, 15A
115.4 W
570µJ (on), 350µJ (off)
Standard
72 nC
18ns/374ns
400V, 15A, 49Ohm, 15V
129 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
SIGC07T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC07T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC07T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 24ns/248ns
  • Test Condition: 400V, 6A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
24ns/248ns
400V, 6A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IHW25N140R5LXKSA1
Infineon Technologies

IGBT 1400V 68A TO247-44

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 246 W
  • Switching Energy: -, 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: -/195ns
  • Test Condition: 25V, 25A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
패키지: -
재고696
1400 V
68 A
75 A
1.9V @ 15V, 25A
246 W
-, 110µJ (off)
Standard
150 nC
-/195ns
25V, 25A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44