페이지 44 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-841
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  44/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGB4086PBF
Infineon Technologies

IGBT 300V 70A 160W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/112ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고15,000
300V
70A
-
2.96V @ 15V, 120A
160W
-
Standard
65nC
36ns/112ns
196V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG7PH46UPBF
Infineon Technologies

IGBT 1200V 130A 469W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 469W
  • Switching Energy: 2.56mJ (on), 1.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 45ns/410ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고7,072
1200V
130A
160A
2V @ 15V, 40A
469W
2.56mJ (on), 1.78mJ (off)
Standard
220nC
45ns/410ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH42UD1PBF
Infineon Technologies

IGBT 1200V 85A 313W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 313W
  • Switching Energy: 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: -/270ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,072
1200V
85A
200A
2V @ 15V, 30A
313W
1.21mJ (off)
Standard
180nC
-/270ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH35UPBF
Infineon Technologies

IGBT 1200V 55A 210W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 210W
  • Switching Energy: 1.06mJ (on), 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,800
1200V
55A
60A
2.2V @ 15V, 20A
210W
1.06mJ (on), 620µJ (off)
Standard
85nC
30ns/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH35UD1PBF
Infineon Technologies

IGBT 1200V 50A 179W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 179W
  • Switching Energy: 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: -/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,896
1200V
50A
150A
2.2V @ 15V, 20A
179W
620µJ (off)
Standard
85nC
-/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH30K10PBF
Infineon Technologies

IGBT 1200V 33A 210W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 33A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
  • Power - Max: 210W
  • Switching Energy: 530µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 14ns/110ns
  • Test Condition: 600V, 9A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,336
1200V
33A
27A
2.35V @ 15V, 9A
210W
530µJ (on), 380µJ (off)
Standard
45nC
14ns/110ns
600V, 9A, 22 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH30K10DPBF
Infineon Technologies

IGBT 1200V 30A 180W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
  • Power - Max: 180W
  • Switching Energy: 530µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 14ns/110ns
  • Test Condition: 600V, 9A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,280
1200V
30A
27A
2.35V @ 15V, 9A
180W
530µJ (on), 380µJ (off)
Standard
45nC
14ns/110ns
600V, 9A, 22 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG6S330UPBF
Infineon Technologies

IGBT 330V 70A 160W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 39ns/120ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고26,712
330V
70A
-
2.1V @ 15V, 70A
160W
-
Standard
86nC
39ns/120ns
196V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG6IC30UPBF
Infineon Technologies

IGBT 600V 25A 37W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.88V @ 15V, 120A
  • Power - Max: 37W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 20ns/160ns
  • Test Condition: 400V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고7,728
600V
25A
-
2.88V @ 15V, 120A
37W
-
Standard
79nC
20ns/160ns
400V, 25A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRG6IC30U-110P
Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A
  • Power - Max: 43W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고6,608
330V
28A
-
2.38V @ 15V, 120A
43W
-
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
SKW30N60HSFKSA1
Infineon Technologies

IGBT 600V 41A 250W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.15mJ
  • Input Type: Standard
  • Gate Charge: 141nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): 125ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,344
600V
41A
112A
3.15V @ 15V, 30A
250W
1.15mJ
Standard
141nC
20ns/250ns
400V, 30A, 11 Ohm, 15V
125ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SKW20N60HSFKSA1
Infineon Technologies

IGBT 600V 36A 178W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: 178W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,560
600V
36A
80A
3.15V @ 15V, 20A
178W
690µJ
Standard
100nC
18ns/207ns
400V, 20A, 16 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SKW20N60FKSA1
Infineon Technologies

IGBT 600V 40A 179W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 179W
  • Switching Energy: 440µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 36ns/225ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고4,432
600V
40A
80A
2.4V @ 15V, 20A
179W
440µJ (on), 330µJ (off)
Standard
100nC
36ns/225ns
400V, 20A, 16 Ohm, 15V
300ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SKW15N120FKSA1
Infineon Technologies

IGBT 1200V 30A 198W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 198W
  • Switching Energy: 1.9mJ
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Test Condition: 800V, 15A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,136
1200V
30A
52A
3.6V @ 15V, 15A
198W
1.9mJ
Standard
130nC
18ns/580ns
800V, 15A, 33 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SKW07N120FKSA1
Infineon Technologies

IGBT 1200V 16.5A 125W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 16.5A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 1mJ
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 27ns/440ns
  • Test Condition: 800V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고3,680
1200V
16.5A
27A
3.6V @ 15V, 8A
125W
1mJ
Standard
70nC
27ns/440ns
800V, 8A, 47 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SKP15N60XKSA1
Infineon Technologies

IGBT 600V 31A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고4,688
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SKP10N60AXKSA1
Infineon Technologies

IGBT 600V 20A 92W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,968
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SKP06N60XKSA1
Infineon Technologies

IGBT 600V 12A 68W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
  • Power - Max: 68W
  • Switching Energy: 215µJ
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 25ns/220ns
  • Test Condition: 400V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고2,688
600V
12A
24A
2.4V @ 15V, 6A
68W
215µJ
Standard
32nC
25ns/220ns
400V, 6A, 50 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SKP04N60XKSA1
Infineon Technologies

IGBT 600V 9.4A 50W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9.4A
  • Current - Collector Pulsed (Icm): 19A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
  • Power - Max: 50W
  • Switching Energy: 131µJ
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 22ns/237ns
  • Test Condition: 400V, 4A, 67 Ohm, 15V
  • Reverse Recovery Time (trr): 180ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,408
600V
9.4A
19A
2.4V @ 15V, 4A
50W
131µJ
Standard
24nC
22ns/237ns
400V, 4A, 67 Ohm, 15V
180ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SKP02N60XKSA1
Infineon Technologies

IGBT 600V 6A 30W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,552
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SKB15N60HSATMA1
Infineon Technologies

IGBT 600V 27A 138W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
  • Power - Max: 138W
  • Switching Energy: 530µJ
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 13ns/209ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 111ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,192
600V
27A
60A
3.15V @ 15V, 15A
138W
530µJ
Standard
80nC
13ns/209ns
400V, 15A, 23 Ohm, 15V
111ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
hot SKB15N60 E8151
Infineon Technologies

IGBT 600V 31A 139W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고72,000
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SKB15N60ATMA1
Infineon Technologies

IGBT 600V 31A 139W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,080
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SKB10N60AATMA1
Infineon Technologies

IGBT 600V 20A 92W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,384
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SKB06N60HSATMA1
Infineon Technologies

IGBT 600V 12A 68W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A
  • Power - Max: 68W
  • Switching Energy: 190µJ
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 11ns/196ns
  • Test Condition: 400V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,184
600V
12A
24A
3.15V @ 15V, 6A
68W
190µJ
Standard
33nC
11ns/196ns
400V, 6A, 50 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
SKB04N60ATMA1
Infineon Technologies

IGBT 600V 9.4A 50W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9.4A
  • Current - Collector Pulsed (Icm): 19A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
  • Power - Max: 50W
  • Switching Energy: 131µJ
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 22ns/237ns
  • Test Condition: 400V, 4A, 67 Ohm, 15V
  • Reverse Recovery Time (trr): 180ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,408
600V
9.4A
19A
2.4V @ 15V, 4A
50W
131µJ
Standard
24nC
22ns/237ns
400V, 4A, 67 Ohm, 15V
180ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SKB02N60E3266ATMA1
Infineon Technologies

IGBT 600V 6A 30W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,968
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SKB02N60ATMA1
Infineon Technologies

IGBT 600V 6A 30W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,296
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3