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부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,864 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC MOSFET DRIVER LIMITING 16SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고4,400 |
|
Single | 1 | IGBT, N-Channel MOSFET | 0 V ~ 18 V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER HIGH-SIDE 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,848 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고230,568 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,152 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 200mA, 350mA | Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,624 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 200mA, 350mA | Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,304 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고60,600 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고7,520 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HALF BRIDGE 600V 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고43,680 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Inverting, Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,304 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고75,936 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER SYNCH RECT 20-SSOP
|
패키지: 20-SSOP (0.209", 5.30mm Width) |
재고7,040 |
|
Synchronous | 2 | N-Channel MOSFET | 4 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-SSOP (0.209", 5.30mm Width) | 20-SSOP |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고55,920 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고190,116 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting, Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고38,484 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고3,952 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,800 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,208 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고67,512 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고91,512 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고17,472 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고6,224 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 16-SOIC
|
패키지: - |
재고19,872 |
|
Synchronous | 2 | IGBT | 13 V ~ 20 V | - | - | Non-Inverting | 600V | - | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
||
Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,808 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 125mA, 250mA | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고49,116 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 125mA, 250mA | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16-DIP
|
패키지: 14-DIP (0.300", 7.62mm), 12 Leads |
재고180,000 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 12 Leads | 14-PDIP |
||
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm), 13 Leads |
재고4,064 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 13 Leads | 14-PDIP |