페이지 30 - Infineon Technologies 제품 - PMIC - 게이트 구동기 | Heisener Electronics
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Infineon Technologies 제품 - PMIC - 게이트 구동기

기록 986
페이지  30/36
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot TDA21106
Infineon Technologies

IC DRIVER DUAL HS MOSFET 8DSO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 45V
  • Rise / Fall Time (Typ): 20ns, 15ns
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고59,700
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
4A, 4A
Non-Inverting
45V
20ns, 15ns
-25°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
FZL4146GGEGHUMA1
Infineon Technologies

IC DRIVER CIRCUIT QUAD PDSO-20-7

  • Driven Configuration: High-Side
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 40 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.4V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-20-7
패키지: 20-SOIC (0.295", 7.50mm Width)
재고6,400
Synchronous
4
P-Channel MOSFET
4.5 V ~ 40 V
0.7V, 2.4V
-
Non-Inverting
-
-
-25°C ~ 125°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
P-DSO-20-7
2ED020I12-F
Infineon Technologies

IC DRIVER IGBT 2-CHAN PDSO-18-1

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 0 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width) 18 leads
  • Supplier Device Package: PG-DSO-18
패키지: 20-SOIC (0.295", 7.50mm Width) 18 leads
재고4,848
Independent
2
IGBT, N-Channel MOSFET
0 V ~ 18 V
-
1A, 2A
Inverting
1200V
-
-
Surface Mount
20-SOIC (0.295", 7.50mm Width) 18 leads
PG-DSO-18
111-4095PBF
Infineon Technologies

IC MOSFET DRIVER N-CHAN 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 2V, 2.15V
  • Current - Peak Output (Source, Sink): 2A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,192
Single
1
N-Channel MOSFET
12 V ~ 18 V
2V, 2.15V
2A, 7A
Non-Inverting
-
18ns, 10ns
-25°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR21362SPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고81,612
3-Phase
6
IGBT, N-Channel MOSFET
11.5 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting, Non-Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IR2135SPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고2,240
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
250mA, 500mA
Inverting
600V
90ns, 40ns
125°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
hot IR21362JTRPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고46,968
3-Phase
6
IGBT, N-Channel MOSFET
11.5 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting, Non-Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
hot IR21362STRPBF
Infineon Technologies

IC DRIVER BRIDGE 3PHASE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.295", 7.50mm Width)
재고2,000
3-Phase
6
IGBT, N-Channel MOSFET
11.5 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting, Non-Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IR2113-1PBF
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 14DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 13 Leads
재고5,152
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
600V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 13 Leads
14-PDIP
IR2112-2PBF
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 12 Leads
재고6,544
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 12 Leads
14-PDIP
hot IR2155PBF
Infineon Technologies

IC DRIVER HALF BRIDGE OSC 8DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 45ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고10,068
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
-
250mA, 500mA
RC Input Circuit
600V
80ns, 45ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
IR2110-2PBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 12 Leads
재고5,088
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 12 Leads
14-PDIP
98-0119PBF
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 12 Leads
재고6,240
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
600V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 12 Leads
14-PDIP
IR2112-1PBF
Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 14DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 13 Leads
재고6,992
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 13 Leads
14-PDIP
98-0334PBF
Infineon Technologies

IC DRIVER 3PHASE 600V 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고6,016
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
hot IR21365JPBF
Infineon Technologies

IC DRIVER 3PHASE 600V 44PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고14,820
3-Phase
6
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
hot IR21368PBF
Infineon Technologies

IC DRIVER 3PHASE 600V 28DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고12,144
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
hot IR2114SS
Infineon Technologies

IC DRIVER HALF-BRIDGE 24-SSOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 24ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 24-SSOP
패키지: 24-SSOP (0.209", 5.30mm Width)
재고60,360
Independent
2
IGBT
11.5 V ~ 20 V
0.8V, 2V
2A, 3A
Non-Inverting
600V
24ns, 7ns
-40°C ~ 150°C (TJ)
Surface Mount
24-SSOP (0.209", 5.30mm Width)
24-SSOP
IR3103
Infineon Technologies

PWR MOD 180W GATE DRIVER 11-SIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 11-SIP, 9 Leads
  • Supplier Device Package: 11-SIP
패키지: 11-SIP, 9 Leads
재고3,728
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
-
Non-Inverting
500V
-
-40°C ~ 150°C (TJ)
Through Hole
11-SIP, 9 Leads
11-SIP
IR2110-1PBF
Infineon Technologies

IC DRIVER HIGH/LOW SID 14DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm), 13 Leads
재고3,488
Independent
2
IGBT, N-Channel MOSFET
3.3 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
25ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm), 13 Leads
14-PDIP
hot IR2214SS
Infineon Technologies

IC DRIVER HALF BRIDGE SGL 24SSOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 24ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 24-SSOP
패키지: 24-SSOP (0.209", 5.30mm Width)
재고64,860
Independent
2
IGBT
11.5 V ~ 20 V
0.8V, 2V
2A, 3A
Non-Inverting
1200V
24ns, 7ns
-40°C ~ 150°C (TJ)
Surface Mount
24-SSOP (0.209", 5.30mm Width)
24-SSOP
hot IR22141SS
Infineon Technologies

IC DRIVER HALF BRIDGE SGL 24SSOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 24ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 24-SSOP
패키지: 24-SSOP (0.209", 5.30mm Width)
재고24,888
Independent
2
IGBT
11.5 V ~ 20 V
0.8V, 2V
2A, 3A
Non-Inverting
1200V
24ns, 7ns
-40°C ~ 150°C (TJ)
Surface Mount
24-SSOP (0.209", 5.30mm Width)
24-SSOP
hot IR2011STR
Infineon Technologies

HI/LO SIDE DRVR 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고52,692
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.2V
1A, 1A
Inverting
200V
35ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2011S
Infineon Technologies

HI/LO SIDE DRVR 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고314,196
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.2V
1A, 1A
Inverting
200V
35ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2011
Infineon Technologies

HI/LO SIDE DRVR 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 35ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고4,640
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.2V
1A, 1A
Inverting
200V
35ns, 20ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
IR3101
Infineon Technologies

IC POWER MODULE 1.6A 500V 11-SIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 11-SIP, 9 Leads
  • Supplier Device Package: 11-SIP
패키지: 11-SIP, 9 Leads
재고5,664
Independent
2
N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
-
Non-Inverting
500V
-
-40°C ~ 150°C (TJ)
Through Hole
11-SIP, 9 Leads
11-SIP
hot IR2304
Infineon Technologies

IC DRIVER HALF-BRIDGE 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 60mA, 130mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 200ns, 100ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고6,816
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.3V
60mA, 130mA
Non-Inverting
600V
200ns, 100ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
IR2085STR
Infineon Technologies

IC DRVR HALF-BRDG SELF-OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,304
Independent
2
N-Channel MOSFET
10 V ~ 15 V
-
1A, 1A
RC Input Circuit
100V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC