Infineon Technologies 제품 - RF 스위치

BGS13PN10E6327XTSA1

Infineon Technologies

CMOS SWITCH

Frequency - Lower: 500MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 17dB @ 6GHz (typ)
Insertion Loss @ Frequency: 1.5dB @ 6GHz
IIP3: 76dBm (typ)
Topology: -
Circuit: SP3T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8 V ~ 3.6 V
RF Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고8,910

6GHz

17dB @ 6GHz (typ)

1.5dB @ 6GHz

76dBm (typ)

-

SP3T

-

50 Ohm

-40°C ~ 85°C

1.8 V ~ 3.6 V

-

BGS12PN10E6327XTSA1

Infineon Technologies

CMOS SWITCH

Frequency - Lower: 500MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 20dB @ 6GHz (typ)
Insertion Loss @ Frequency: 0.6dB @ 6GHz
IIP3: -
Topology: -
Circuit: SPDT
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8 V ~ 3.6 V
RF Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,232

6GHz

20dB @ 6GHz (typ)

0.6dB @ 6GHz

-

SPDT

-

50 Ohm

-30°C ~ 85°C

1.8 V ~ 3.6 V

-

BGSA11GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,124

-

BGS12S3N6E6327XTSA1

Infineon Technologies

IC RF SWITCH CMOS 6TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,246

-

BGS14AN16E6327XTSA1

Infineon Technologies

IC SWITCH RF SP4T TSNP16-6

Frequency - Lower: 100MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 27dB @ 2.69Hz (typ)
Insertion Loss @ Frequency: 0.69dB @ 2.69GHz
IIP3: -
Topology: Reflective
Circuit: SP4T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.85 V ~ 4.7 V
RF Type: W-CDMA
Package / Case: 16-WFQFN Exposed Pad
Supplier Device Package: PG-TSNP-16-6

패키지: 16-WFQFN Exposed Pad

재고27,642

3GHz

27dB @ 2.69Hz (typ)

0.69dB @ 2.69GHz

-

Reflective

SP4T

-

50 Ohm

-30°C ~ 85°C

2.85 V ~ 4.7 V

W-CDMA

16-WFQFN Exposed Pad

PG-TSNP-16-6

BGS22W2L10E6327XTSA1

Infineon Technologies

IC SWITCH RF DPDT TSLP10-1

Frequency - Lower: 100MHz
Frequency - Upper: 2GHz
Isolation @ Frequency: 27dB @ 1.91Hz (typ)
Insertion Loss @ Frequency: 0.39dB @ 1.91GHz
IIP3: -
Topology: Reflective
Circuit: DPDT
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: General Purpose
Package / Case: 10-XFQFN
Supplier Device Package: TSLP-10-1

패키지: 10-XFQFN

재고60,456

2GHz

27dB @ 1.91Hz (typ)

0.39dB @ 1.91GHz

-

Reflective

DPDT

-

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.6 V

General Purpose

10-XFQFN

TSLP-10-1

BGSF110GN26E6327XTSA1

Infineon Technologies

IC SWITCH RF 26TSNP

Frequency - Lower: 100MHz
Frequency - Upper: 3.8GHz
Isolation @ Frequency: 40dB @ 3GHz (typ)
Insertion Loss @ Frequency: 1.3dB @ 3GHz
IIP3: -
Topology: -
Circuit: SP10T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.3 V
RF Type: GSM, LTE, W-CDMA
Package / Case: 26-WFQFN Exposed Pad
Supplier Device Package: PG-TSNP-26-2

패키지: 26-WFQFN Exposed Pad

재고6,894

3.8GHz

40dB @ 3GHz (typ)

1.3dB @ 3GHz

-

SP10T

-

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.3 V

GSM, LTE, W-CDMA

26-WFQFN Exposed Pad

PG-TSNP-26-2

BGSF1717MN26E6327XTSA1

Infineon Technologies

IC SWITCH RF 26TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 26-VFQFN Exposed Pad
Supplier Device Package: PG-TSNP-26-3

패키지: 26-VFQFN Exposed Pad

재고4,230

-

26-VFQFN Exposed Pad

PG-TSNP-26-3

BGS16MN14E6327XTSA1

Infineon Technologies

IC SWITCH RF 14TSNP

Frequency - Lower: 100MHz
Frequency - Upper: 2.7GHz
Isolation @ Frequency: 33dB @ 2GHz
Insertion Loss @ Frequency: 0.45dB @ 2GHz
IIP3: -
Topology: -
Circuit: SP6T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5 V ~ 5.5 V
RF Type: WCDMA
Package / Case: 14-WFQFN Exposed Pad
Supplier Device Package: PG-TSNP-14-3

패키지: 14-WFQFN Exposed Pad

재고4,230

2.7GHz

33dB @ 2GHz

0.45dB @ 2GHz

-

SP6T

-

50 Ohm

-30°C ~ 85°C

2.5 V ~ 5.5 V

WCDMA

14-WFQFN Exposed Pad

PG-TSNP-14-3

BGS18MN14E6327XTSA1

Infineon Technologies

IC SWITCH RF 14TSNP

Frequency - Lower: 100MHz
Frequency - Upper: 2.7GHz
Isolation @ Frequency: 29dB @ 2GHz (typ)
Insertion Loss @ Frequency: 0.8dB @ 2GHz
IIP3: -
Topology: -
Circuit: SP8T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5 V ~ 5.5 V
RF Type: LTE, W-CDMA
Package / Case: 14-WFQFN Exposed Pad
Supplier Device Package: PG-TSNP-14-3

패키지: 14-WFQFN Exposed Pad

재고7,542

2.7GHz

29dB @ 2GHz (typ)

0.8dB @ 2GHz

-

SP8T

-

50 Ohm

-30°C ~ 85°C

2.5 V ~ 5.5 V

LTE, W-CDMA

14-WFQFN Exposed Pad

PG-TSNP-14-3

BGSX22GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 10-XFQFN
Supplier Device Package: PG-TSNP-10-1

패키지: 10-XFQFN

재고3,330

-

10-XFQFN

PG-TSNP-10-1

BGSA14GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 10-XFQFN
Supplier Device Package: PG-TSNP-10-1

패키지: 10-XFQFN

재고6,894

-

10-XFQFN

PG-TSNP-10-1

BGSA13GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 10-XFQFN
Supplier Device Package: PG-TSNP-10-1

패키지: 10-XFQFN

재고4,428

-

10-XFQFN

PG-TSNP-10-1

BGSA12GN10E6327XTSA1

Infineon Technologies

IC SWITCH RF 10TSNP

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 10-XFQFN
Supplier Device Package: PG-TSNP-10-1

패키지: 10-XFQFN

재고2,286

-

10-XFQFN

PG-TSNP-10-1

BGS22WL10E6327XTSA1

Infineon Technologies

IC SWITCH RF DPDT TSLP10-1

Frequency - Lower: 100MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 24dB @ 2.69GHz (typ)
Insertion Loss @ Frequency: 0.45dB @ 2.69GHz
IIP3: -
Topology: Reflective
Circuit: DPDT
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: General Purpose
Package / Case: 10-XFQFN
Supplier Device Package: TSLP-10-1

패키지: 10-XFQFN

재고7,452

3GHz

24dB @ 2.69GHz (typ)

0.45dB @ 2.69GHz

-

Reflective

DPDT

-

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.6 V

General Purpose

10-XFQFN

TSLP-10-1

BGS 12AL7-4 E6327

Infineon Technologies

IC SW SPDT 30MHZ - 3GHZ TSLP7-4

Frequency - Lower: 30MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 25dB @ 2GHz (typ)
Insertion Loss @ Frequency: 0.5dB @ 2GHz
IIP3: -
Topology: Reflective
Circuit: SPDT
P1dB: -
Features: DC Blocked, Single Line Control
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: General Purpose
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: TSLP-7-4

패키지: 6-XFDFN Exposed Pad

재고4,788

3GHz

25dB @ 2GHz (typ)

0.5dB @ 2GHz

-

Reflective

SPDT

-

DC Blocked, Single Line Control

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.6 V

General Purpose

6-XFDFN Exposed Pad

TSLP-7-4

BGS14GA14E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: 100MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 27dB @ 6GHz (typ)
Insertion Loss @ Frequency: 0.65dB @ 6GHz
IIP3: -
Topology: -
Circuit: SP4T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
RF Type: -
Package / Case: 14-UFQFN Exposed Pad
Supplier Device Package: ATSLP-14-5

패키지: 14-UFQFN Exposed Pad

재고6,048

6GHz

27dB @ 6GHz (typ)

0.65dB @ 6GHz

-

SP4T

-

50 Ohm

-30°C ~ 85°C

3V

-

14-UFQFN Exposed Pad

ATSLP-14-5

BGS13GA14E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: 100MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 27dB @ 6GHz (typ)
Insertion Loss @ Frequency: 0.65dB @ 6GHz
IIP3: -
Topology: -
Circuit: SP3T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
RF Type: -
Package / Case: 14-UFQFN Exposed Pad
Supplier Device Package: ATSLP-14-4

패키지: 14-UFQFN Exposed Pad

재고3,258

6GHz

27dB @ 6GHz (typ)

0.65dB @ 6GHz

-

SP3T

-

50 Ohm

-30°C ~ 85°C

3V

-

14-UFQFN Exposed Pad

ATSLP-14-4

BGS13S2N9E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: 100MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 23dB @ 3GHz (typ)
Insertion Loss @ Frequency: 0.55dB @ 3GHz
IIP3: -
Topology: -
Circuit: SP3T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8 V ~ 3.3 V
RF Type: -
Package / Case: 9-XFLGA
Supplier Device Package: TSNP-9-3

패키지: 9-XFLGA

재고4,464

3GHz

23dB @ 3GHz (typ)

0.55dB @ 3GHz

-

SP3T

-

50 Ohm

-40°C ~ 85°C

1.8 V ~ 3.3 V

-

9-XFLGA

TSNP-9-3

BGS18GA14E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: 100MHz
Frequency - Upper: 3.8GHz
Isolation @ Frequency: 33dB @ 3.5GHz (typ)
Insertion Loss @ Frequency: 0.7dB @ 3.5GHz
IIP3: -
Topology: -
Circuit: SP8T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
RF Type: -
Package / Case: 14-UFQFN Exposed Pad
Supplier Device Package: ATSLP-14-4

패키지: 14-UFQFN Exposed Pad

재고35,958

3.8GHz

33dB @ 3.5GHz (typ)

0.7dB @ 3.5GHz

-

SP8T

-

50 Ohm

-30°C ~ 85°C

3V

-

14-UFQFN Exposed Pad

ATSLP-14-4

BGS15MA12E6327XTSA1

Infineon Technologies

IC SWITCH RF 12ATSLP

Frequency - Lower: 100MHz
Frequency - Upper: 2.9GHz
Isolation @ Frequency: 25dB @ 2.5GHz (typ)
Insertion Loss @ Frequency: 0.45dB @ 2.5GHz
IIP3: -
Topology: -
Circuit: SP5T
P1dB: 30dBm
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2 V ~ 5.5 V
RF Type: WCDMA
Package / Case: 12-UFQFN Exposed Pad
Supplier Device Package: ATSLP-12-4

패키지: 12-UFQFN Exposed Pad

재고38,724

2.9GHz

25dB @ 2.5GHz (typ)

0.45dB @ 2.5GHz

-

SP5T

30dBm

-

50 Ohm

-30°C ~ 85°C

2.2 V ~ 5.5 V

WCDMA

12-UFQFN Exposed Pad

ATSLP-12-4

BGS13SN8E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 8-XFQFN
Supplier Device Package: PG-TSNP-8-1

패키지: 8-XFQFN

재고156,864

-

8-XFQFN

PG-TSNP-8-1

BGSF 18DM20 E6327

Infineon Technologies

IC SWITCH SP8T HP SPI 20PIN

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: SP8T
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: Cellular, 3G, GSM
Package / Case: -
Supplier Device Package: -

패키지: -

재고35,550

-

SP8T

-

Cellular, 3G, GSM

-

BGS 15AN16 E6327

Infineon Technologies

IC SWITCH WCDMA RF SP5T TSNP-16

Frequency - Lower: 100MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 27dB @ 2.69Hz
Insertion Loss @ Frequency: 0.65dB @ 2.69GHz
IIP3: -
Topology: Reflective
Circuit: SP5T
P1dB: -
Features: DC Blocked
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: -
RF Type: W-CDMA
Package / Case: 16-XFQFN Exposed Pad
Supplier Device Package: PG-TSNP-16-3

패키지: 16-XFQFN Exposed Pad

재고24,492

3GHz

27dB @ 2.69Hz

0.65dB @ 2.69GHz

-

Reflective

SP5T

-

DC Blocked

50 Ohm

-30°C ~ 85°C

-

W-CDMA

16-XFQFN Exposed Pad

PG-TSNP-16-3

BGS15GA14E6327XTSA1

Infineon Technologies

RF SWITCH

Frequency - Lower: 100MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 27dB @ 6GHz (typ)
Insertion Loss @ Frequency: 0.65dB @ 6GHz
IIP3: -
Topology: -
Circuit: SP5T
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
RF Type: -
Package / Case: 14-UFQFN Exposed Pad
Supplier Device Package: ATSLP-14-4

패키지: 14-UFQFN Exposed Pad

재고34,536

6GHz

27dB @ 6GHz (typ)

0.65dB @ 6GHz

-

SP5T

-

50 Ohm

-30°C ~ 85°C

3V

-

14-UFQFN Exposed Pad

ATSLP-14-4

BGS12PL6E6327XTSA1

Infineon Technologies

IC SWITCH RF SPDT TSLP6-4

Frequency - Lower: 100MHz
Frequency - Upper: 4GHz
Isolation @ Frequency: 22dB @ 3.8GHz (typ)
Insertion Loss @ Frequency: 0.77dB @ 3.8GHz
IIP3: -
Topology: Reflective
Circuit: SPDT
P1dB: -
Features: Single Line Control
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: GSM, LTE, W-CDMA
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-4

패키지: 6-XFDFN

재고335,886

4GHz

22dB @ 3.8GHz (typ)

0.77dB @ 3.8GHz

-

Reflective

SPDT

-

Single Line Control

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.6 V

GSM, LTE, W-CDMA

6-XFDFN

TSLP-6-4

BGS 12AL7-6 E6327

Infineon Technologies

IC SWITCH RF SPDT TSLP7-6

Frequency - Lower: 30MHz
Frequency - Upper: 3GHz
Isolation @ Frequency: 25dB @ 2GHz (typ)
Insertion Loss @ Frequency: 0.5dB @ 2GHz
IIP3: -
Topology: Reflective
Circuit: SPDT
P1dB: -
Features: DC Blocked, Single Line Control
Impedance: 50 Ohm
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4 V ~ 3.6 V
RF Type: General Purpose
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: TSLP-7-6

패키지: 6-XFDFN Exposed Pad

재고60,534

3GHz

25dB @ 2GHz (typ)

0.5dB @ 2GHz

-

Reflective

SPDT

-

DC Blocked, Single Line Control

50 Ohm

-30°C ~ 85°C

2.4 V ~ 3.6 V

General Purpose

6-XFDFN Exposed Pad

TSLP-7-6

BGS12SN6E6327XTSA1

Infineon Technologies

IC SWITCH RF TSNP6

Frequency - Lower: 100MHz
Frequency - Upper: 6GHz
Isolation @ Frequency: 21dB @ 6GHz (typ)
Insertion Loss @ Frequency: 0.65dB @ 6GHz
IIP3: -
Topology: -
Circuit: SPDT
P1dB: -
Features: -
Impedance: 50 Ohm
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8 V ~ 3.5 V
RF Type: Bluetooth, WLAN
Package / Case: 6-XFDFN
Supplier Device Package: TSNP-6-2

패키지: 6-XFDFN

재고145,866

6GHz

21dB @ 6GHz (typ)

0.65dB @ 6GHz

-

SPDT

-

50 Ohm

-40°C ~ 85°C

1.8 V ~ 3.5 V

Bluetooth, WLAN

6-XFDFN

TSNP-6-2

부품 번호	제조업체	설명	패키지	재고	Frequency - Upper	Isolation @ Frequency	Insertion Loss @ Frequency	IIP3	Topology	Circuit	P1dB	Features	Impedance	Operating Temperature	Voltage - Supply	RF Type	Package / Case	Supplier Device Package
BGS13PN10E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 500MHz Frequency - Upper: 6GHz Isolation @ Frequency: 17dB @ 6GHz (typ) Insertion Loss @ Frequency: 1.5dB @ 6GHz IIP3: 76dBm (typ) Topology: - Circuit: SP3T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8 V ~ 3.6 V RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고8,910	6GHz	17dB @ 6GHz (typ)	1.5dB @ 6GHz	76dBm (typ)	-	SP3T	-	-	50 Ohm	-40°C ~ 85°C	1.8 V ~ 3.6 V	-	-	-
BGS12PN10E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 500MHz Frequency - Upper: 6GHz Isolation @ Frequency: 20dB @ 6GHz (typ) Insertion Loss @ Frequency: 0.6dB @ 6GHz IIP3: - Topology: - Circuit: SPDT P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8 V ~ 3.6 V RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,232	6GHz	20dB @ 6GHz (typ)	0.6dB @ 6GHz	-	-	SPDT	-	-	50 Ohm	-30°C ~ 85°C	1.8 V ~ 3.6 V	-	-	-
BGSA11GN10E6327XTSA1	Infineon Technologies	IC SWITCH RF 10TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,124	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS12S3N6E6327XTSA1	Infineon Technologies	IC RF SWITCH CMOS 6TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,246	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS14AN16E6327XTSA1	Infineon Technologies	IC SWITCH RF SP4T TSNP16-6 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 27dB @ 2.69Hz (typ) Insertion Loss @ Frequency: 0.69dB @ 2.69GHz IIP3: - Topology: Reflective Circuit: SP4T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.85 V ~ 4.7 V RF Type: W-CDMA Package / Case: 16-WFQFN Exposed Pad Supplier Device Package: PG-TSNP-16-6	패키지: 16-WFQFN Exposed Pad	재고27,642	3GHz	27dB @ 2.69Hz (typ)	0.69dB @ 2.69GHz	-	Reflective	SP4T	-	-	50 Ohm	-30°C ~ 85°C	2.85 V ~ 4.7 V	W-CDMA	16-WFQFN Exposed Pad	PG-TSNP-16-6
BGS22W2L10E6327XTSA1	Infineon Technologies	IC SWITCH RF DPDT TSLP10-1 Frequency - Lower: 100MHz Frequency - Upper: 2GHz Isolation @ Frequency: 27dB @ 1.91Hz (typ) Insertion Loss @ Frequency: 0.39dB @ 1.91GHz IIP3: - Topology: Reflective Circuit: DPDT P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 10-XFQFN Supplier Device Package: TSLP-10-1	패키지: 10-XFQFN	재고60,456	2GHz	27dB @ 1.91Hz (typ)	0.39dB @ 1.91GHz	-	Reflective	DPDT	-	-	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	10-XFQFN	TSLP-10-1
BGSF110GN26E6327XTSA1	Infineon Technologies	IC SWITCH RF 26TSNP Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 40dB @ 3GHz (typ) Insertion Loss @ Frequency: 1.3dB @ 3GHz IIP3: - Topology: - Circuit: SP10T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.3 V RF Type: GSM, LTE, W-CDMA Package / Case: 26-WFQFN Exposed Pad Supplier Device Package: PG-TSNP-26-2	패키지: 26-WFQFN Exposed Pad	재고6,894	3.8GHz	40dB @ 3GHz (typ)	1.3dB @ 3GHz	-	-	SP10T	-	-	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.3 V	GSM, LTE, W-CDMA	26-WFQFN Exposed Pad	PG-TSNP-26-2
BGSF1717MN26E6327XTSA1	Infineon Technologies	IC SWITCH RF 26TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 26-VFQFN Exposed Pad Supplier Device Package: PG-TSNP-26-3	패키지: 26-VFQFN Exposed Pad	재고4,230	-	-	-	-	-	-	-	-	-	-	-	-	26-VFQFN Exposed Pad	PG-TSNP-26-3
BGS16MN14E6327XTSA1	Infineon Technologies	IC SWITCH RF 14TSNP Frequency - Lower: 100MHz Frequency - Upper: 2.7GHz Isolation @ Frequency: 33dB @ 2GHz Insertion Loss @ Frequency: 0.45dB @ 2GHz IIP3: - Topology: - Circuit: SP6T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5 V ~ 5.5 V RF Type: WCDMA Package / Case: 14-WFQFN Exposed Pad Supplier Device Package: PG-TSNP-14-3	패키지: 14-WFQFN Exposed Pad	재고4,230	2.7GHz	33dB @ 2GHz	0.45dB @ 2GHz	-	-	SP6T	-	-	50 Ohm	-30°C ~ 85°C	2.5 V ~ 5.5 V	WCDMA	14-WFQFN Exposed Pad	PG-TSNP-14-3
BGS18MN14E6327XTSA1	Infineon Technologies	IC SWITCH RF 14TSNP Frequency - Lower: 100MHz Frequency - Upper: 2.7GHz Isolation @ Frequency: 29dB @ 2GHz (typ) Insertion Loss @ Frequency: 0.8dB @ 2GHz IIP3: - Topology: - Circuit: SP8T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5 V ~ 5.5 V RF Type: LTE, W-CDMA Package / Case: 14-WFQFN Exposed Pad Supplier Device Package: PG-TSNP-14-3	패키지: 14-WFQFN Exposed Pad	재고7,542	2.7GHz	29dB @ 2GHz (typ)	0.8dB @ 2GHz	-	-	SP8T	-	-	50 Ohm	-30°C ~ 85°C	2.5 V ~ 5.5 V	LTE, W-CDMA	14-WFQFN Exposed Pad	PG-TSNP-14-3
BGSX22GN10E6327XTSA1	Infineon Technologies	IC SWITCH RF 10TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 10-XFQFN Supplier Device Package: PG-TSNP-10-1	패키지: 10-XFQFN	재고3,330	-	-	-	-	-	-	-	-	-	-	-	-	10-XFQFN	PG-TSNP-10-1
BGSA14GN10E6327XTSA1	Infineon Technologies	IC SWITCH RF 10TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 10-XFQFN Supplier Device Package: PG-TSNP-10-1	패키지: 10-XFQFN	재고6,894	-	-	-	-	-	-	-	-	-	-	-	-	10-XFQFN	PG-TSNP-10-1
BGSA13GN10E6327XTSA1	Infineon Technologies	IC SWITCH RF 10TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 10-XFQFN Supplier Device Package: PG-TSNP-10-1	패키지: 10-XFQFN	재고4,428	-	-	-	-	-	-	-	-	-	-	-	-	10-XFQFN	PG-TSNP-10-1
BGSA12GN10E6327XTSA1	Infineon Technologies	IC SWITCH RF 10TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 10-XFQFN Supplier Device Package: PG-TSNP-10-1	패키지: 10-XFQFN	재고2,286	-	-	-	-	-	-	-	-	-	-	-	-	10-XFQFN	PG-TSNP-10-1
BGS22WL10E6327XTSA1	Infineon Technologies	IC SWITCH RF DPDT TSLP10-1 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 24dB @ 2.69GHz (typ) Insertion Loss @ Frequency: 0.45dB @ 2.69GHz IIP3: - Topology: Reflective Circuit: DPDT P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 10-XFQFN Supplier Device Package: TSLP-10-1	패키지: 10-XFQFN	재고7,452	3GHz	24dB @ 2.69GHz (typ)	0.45dB @ 2.69GHz	-	Reflective	DPDT	-	-	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	10-XFQFN	TSLP-10-1
BGS 12AL7-4 E6327	Infineon Technologies	IC SW SPDT 30MHZ - 3GHZ TSLP7-4 Frequency - Lower: 30MHz Frequency - Upper: 3GHz Isolation @ Frequency: 25dB @ 2GHz (typ) Insertion Loss @ Frequency: 0.5dB @ 2GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: DC Blocked, Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: TSLP-7-4	패키지: 6-XFDFN Exposed Pad	재고4,788	3GHz	25dB @ 2GHz (typ)	0.5dB @ 2GHz	-	Reflective	SPDT	-	DC Blocked, Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	6-XFDFN Exposed Pad	TSLP-7-4
BGS14GA14E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: 100MHz Frequency - Upper: 6GHz Isolation @ Frequency: 27dB @ 6GHz (typ) Insertion Loss @ Frequency: 0.65dB @ 6GHz IIP3: - Topology: - Circuit: SP4T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V RF Type: - Package / Case: 14-UFQFN Exposed Pad Supplier Device Package: ATSLP-14-5	패키지: 14-UFQFN Exposed Pad	재고6,048	6GHz	27dB @ 6GHz (typ)	0.65dB @ 6GHz	-	-	SP4T	-	-	50 Ohm	-30°C ~ 85°C	3V	-	14-UFQFN Exposed Pad	ATSLP-14-5
BGS13GA14E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: 100MHz Frequency - Upper: 6GHz Isolation @ Frequency: 27dB @ 6GHz (typ) Insertion Loss @ Frequency: 0.65dB @ 6GHz IIP3: - Topology: - Circuit: SP3T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V RF Type: - Package / Case: 14-UFQFN Exposed Pad Supplier Device Package: ATSLP-14-4	패키지: 14-UFQFN Exposed Pad	재고3,258	6GHz	27dB @ 6GHz (typ)	0.65dB @ 6GHz	-	-	SP3T	-	-	50 Ohm	-30°C ~ 85°C	3V	-	14-UFQFN Exposed Pad	ATSLP-14-4
BGS13S2N9E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 23dB @ 3GHz (typ) Insertion Loss @ Frequency: 0.55dB @ 3GHz IIP3: - Topology: - Circuit: SP3T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8 V ~ 3.3 V RF Type: - Package / Case: 9-XFLGA Supplier Device Package: TSNP-9-3	패키지: 9-XFLGA	재고4,464	3GHz	23dB @ 3GHz (typ)	0.55dB @ 3GHz	-	-	SP3T	-	-	50 Ohm	-40°C ~ 85°C	1.8 V ~ 3.3 V	-	9-XFLGA	TSNP-9-3
BGS18GA14E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 33dB @ 3.5GHz (typ) Insertion Loss @ Frequency: 0.7dB @ 3.5GHz IIP3: - Topology: - Circuit: SP8T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V RF Type: - Package / Case: 14-UFQFN Exposed Pad Supplier Device Package: ATSLP-14-4	패키지: 14-UFQFN Exposed Pad	재고35,958	3.8GHz	33dB @ 3.5GHz (typ)	0.7dB @ 3.5GHz	-	-	SP8T	-	-	50 Ohm	-30°C ~ 85°C	3V	-	14-UFQFN Exposed Pad	ATSLP-14-4
BGS15MA12E6327XTSA1	Infineon Technologies	IC SWITCH RF 12ATSLP Frequency - Lower: 100MHz Frequency - Upper: 2.9GHz Isolation @ Frequency: 25dB @ 2.5GHz (typ) Insertion Loss @ Frequency: 0.45dB @ 2.5GHz IIP3: - Topology: - Circuit: SP5T P1dB: 30dBm Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.2 V ~ 5.5 V RF Type: WCDMA Package / Case: 12-UFQFN Exposed Pad Supplier Device Package: ATSLP-12-4	패키지: 12-UFQFN Exposed Pad	재고38,724	2.9GHz	25dB @ 2.5GHz (typ)	0.45dB @ 2.5GHz	-	-	SP5T	30dBm	-	50 Ohm	-30°C ~ 85°C	2.2 V ~ 5.5 V	WCDMA	12-UFQFN Exposed Pad	ATSLP-12-4
BGS13SN8E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 8-XFQFN Supplier Device Package: PG-TSNP-8-1	패키지: 8-XFQFN	재고156,864	-	-	-	-	-	-	-	-	-	-	-	-	8-XFQFN	PG-TSNP-8-1
BGSF 18DM20 E6327	Infineon Technologies	IC SWITCH SP8T HP SPI 20PIN Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: SP8T P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: Cellular, 3G, GSM Package / Case: - Supplier Device Package: -	패키지: -	재고35,550	-	-	-	-	-	SP8T	-	-	-	-	-	Cellular, 3G, GSM	-	-
BGS 15AN16 E6327	Infineon Technologies	IC SWITCH WCDMA RF SP5T TSNP-16 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 27dB @ 2.69Hz Insertion Loss @ Frequency: 0.65dB @ 2.69GHz IIP3: - Topology: Reflective Circuit: SP5T P1dB: - Features: DC Blocked Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: - RF Type: W-CDMA Package / Case: 16-XFQFN Exposed Pad Supplier Device Package: PG-TSNP-16-3	패키지: 16-XFQFN Exposed Pad	재고24,492	3GHz	27dB @ 2.69Hz	0.65dB @ 2.69GHz	-	Reflective	SP5T	-	DC Blocked	50 Ohm	-30°C ~ 85°C	-	W-CDMA	16-XFQFN Exposed Pad	PG-TSNP-16-3
BGS15GA14E6327XTSA1	Infineon Technologies	RF SWITCH Frequency - Lower: 100MHz Frequency - Upper: 6GHz Isolation @ Frequency: 27dB @ 6GHz (typ) Insertion Loss @ Frequency: 0.65dB @ 6GHz IIP3: - Topology: - Circuit: SP5T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V RF Type: - Package / Case: 14-UFQFN Exposed Pad Supplier Device Package: ATSLP-14-4	패키지: 14-UFQFN Exposed Pad	재고34,536	6GHz	27dB @ 6GHz (typ)	0.65dB @ 6GHz	-	-	SP5T	-	-	50 Ohm	-30°C ~ 85°C	3V	-	14-UFQFN Exposed Pad	ATSLP-14-4
BGS12PL6E6327XTSA1	Infineon Technologies	IC SWITCH RF SPDT TSLP6-4 Frequency - Lower: 100MHz Frequency - Upper: 4GHz Isolation @ Frequency: 22dB @ 3.8GHz (typ) Insertion Loss @ Frequency: 0.77dB @ 3.8GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: GSM, LTE, W-CDMA Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-4	패키지: 6-XFDFN	재고335,886	4GHz	22dB @ 3.8GHz (typ)	0.77dB @ 3.8GHz	-	Reflective	SPDT	-	Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	GSM, LTE, W-CDMA	6-XFDFN	TSLP-6-4
BGS 12AL7-6 E6327	Infineon Technologies	IC SWITCH RF SPDT TSLP7-6 Frequency - Lower: 30MHz Frequency - Upper: 3GHz Isolation @ Frequency: 25dB @ 2GHz (typ) Insertion Loss @ Frequency: 0.5dB @ 2GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: DC Blocked, Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: TSLP-7-6	패키지: 6-XFDFN Exposed Pad	재고60,534	3GHz	25dB @ 2GHz (typ)	0.5dB @ 2GHz	-	Reflective	SPDT	-	DC Blocked, Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	6-XFDFN Exposed Pad	TSLP-7-6
BGS12SN6E6327XTSA1	Infineon Technologies	IC SWITCH RF TSNP6 Frequency - Lower: 100MHz Frequency - Upper: 6GHz Isolation @ Frequency: 21dB @ 6GHz (typ) Insertion Loss @ Frequency: 0.65dB @ 6GHz IIP3: - Topology: - Circuit: SPDT P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8 V ~ 3.5 V RF Type: Bluetooth, WLAN Package / Case: 6-XFDFN Supplier Device Package: TSNP-6-2	패키지: 6-XFDFN	재고145,866	6GHz	21dB @ 6GHz (typ)	0.65dB @ 6GHz	-	-	SPDT	-	-	50 Ohm	-40°C ~ 85°C	1.8 V ~ 3.5 V	Bluetooth, WLAN	6-XFDFN	TSNP-6-2