페이지 2 - Infineon Technologies 제품 - RF 스위치

부품 번호	제조업체	설명	패키지	재고	Frequency - Upper	Isolation @ Frequency	Insertion Loss @ Frequency	IIP3	Topology	Circuit	P1dB	Features	Impedance	Operating Temperature	Voltage - Supply	RF Type	Package / Case	Supplier Device Package
BGS13SN9E6327XTSA1	Infineon Technologies	IC RF SWITCH SP3T TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고8,244	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS1515MN20E6327XTSA1	Infineon Technologies	IC SWITCH RF 20TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고8,946	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS1414MN20E6327XTSA1	Infineon Technologies	IC SWITCH RF 20TSNP Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,268	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS13SL9E6327XTSA1	Infineon Technologies	IC SWITCH RF SP3T TSLP9-3 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 22dB @ 2.7GHz (typ) Insertion Loss @ Frequency: 0.54dB @ 2.7GHz IIP3: - Topology: Reflective Circuit: SP3T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: Bluetooth, WLAN Package / Case: 6-XFLGA Supplier Device Package: TSLP-9-3	패키지: 6-XFLGA	재고5,238	3GHz	22dB @ 2.7GHz (typ)	0.54dB @ 2.7GHz	-	Reflective	SP3T	-	-	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	Bluetooth, WLAN	6-XFLGA	TSLP-9-3
BGS12SL6E6327XTSA1	Infineon Technologies	IC SWITCH RF SPDT TSLP6-4 Frequency - Lower: 100MHz Frequency - Upper: 6GHz Isolation @ Frequency: 15dB @ 6GHz (typ) Insertion Loss @ Frequency: 1.5dB @ 6GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: GSM, LTE, W-CDMA Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-4	패키지: 6-XFDFN	재고6,696	6GHz	15dB @ 6GHz (typ)	1.5dB @ 6GHz	-	Reflective	SPDT	-	Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	GSM, LTE, W-CDMA	6-XFDFN	TSLP-6-4
BGS 12AL7-6 E6433	Infineon Technologies	IC SWITCH RF SPDT TSLP7-6 Frequency - Lower: 30MHz Frequency - Upper: 3GHz Isolation @ Frequency: 25dB @ 2GHz (typ) Insertion Loss @ Frequency: 0.5dB @ 2GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: DC Blocked, Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: TSLP-7-6	패키지: 6-XFDFN Exposed Pad	재고8,730	3GHz	25dB @ 2GHz (typ)	0.5dB @ 2GHz	-	Reflective	SPDT	-	DC Blocked, Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	6-XFDFN Exposed Pad	TSLP-7-6
BGS 12A TR E6327	Infineon Technologies	IC SWITCH RF SPDT FWLP-6-1 Frequency - Lower: 100MHz Frequency - Upper: 3GHz Isolation @ Frequency: 27dB @ 2GHz Insertion Loss @ Frequency: 0.6dB @ 2GHz IIP3: - Topology: Reflective Circuit: SPDT P1dB: - Features: DC Blocked, Single Line Control Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.6 V RF Type: General Purpose Package / Case: 6-XFBGA, WLCSP Supplier Device Package: FWLP-6	패키지: 6-XFBGA, WLCSP	재고8,118	3GHz	27dB @ 2GHz	0.6dB @ 2GHz	-	Reflective	SPDT	-	DC Blocked, Single Line Control	50 Ohm	-30°C ~ 85°C	2.4 V ~ 3.6 V	General Purpose	6-XFBGA, WLCSP	FWLP-6
BGT24ATR12E6433XUMA1	Infineon Technologies	IC SWITCH RF 32VQFN Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-32-9	패키지: 32-VFQFN Exposed Pad	재고8,604	-	-	-	-	-	-	-	-	-	-	-	-	32-VFQFN Exposed Pad	PG-VQFN-32-9
BGT24ATR11E6433XUMA1	Infineon Technologies	IC SWITCH RF 32VQFN Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-32-9	패키지: 32-VFQFN Exposed Pad	재고4,410	-	-	-	-	-	-	-	-	-	-	-	-	32-VFQFN Exposed Pad	PG-VQFN-32-9
BGT24AR2E6433XUMA1	Infineon Technologies	IC SWITCH RF 32VQFN Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-32-9	패키지: 32-VFQFN Exposed Pad	재고5,472	-	-	-	-	-	-	-	-	-	-	-	-	32-VFQFN Exposed Pad	PG-VQFN-32-9
BGSX212MA18E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 39dB @ 2.5GHz Insertion Loss @ Frequency: 0.9dB @ 3.5GHz IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5 V ~ 3.4 V RF Type: LTE Package / Case: 18-UFQFN Exposed Pad Supplier Device Package: PG-ATSLP-18	패키지: 18-UFQFN Exposed Pad	재고4,824	3.8GHz	39dB @ 2.5GHz	0.9dB @ 3.5GHz	-	-	-	-	-	50 Ohm	-30°C ~ 85°C	2.5 V ~ 3.4 V	LTE	18-UFQFN Exposed Pad	PG-ATSLP-18
BGSX210MA18E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 39dB @ 2.5GHz Insertion Loss @ Frequency: 0.65dB @ 2.7GHz IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5 V ~ 3.4 V RF Type: LTE Package / Case: 18-UFQFN Exposed Pad Supplier Device Package: PG-ATSLP-18	패키지: 18-UFQFN Exposed Pad	재고5,922	3.8GHz	39dB @ 2.5GHz	0.65dB @ 2.7GHz	-	-	-	-	-	-	-30°C ~ 85°C	2.5 V ~ 3.4 V	LTE	18-UFQFN Exposed Pad	PG-ATSLP-18
BGSX28MA18E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 39dB @ 2.5GHz Insertion Loss @ Frequency: 0.9dB @ 3.5GHz IIP3: - Topology: - Circuit: DP3T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5 V ~ 3.4 V RF Type: LTE Package / Case: 18-UFQFN Exposed Pad Supplier Device Package: PG-ATSLP-18	패키지: 18-UFQFN Exposed Pad	재고2,106	3.8GHz	39dB @ 2.5GHz	0.9dB @ 3.5GHz	-	-	DP3T	-	-	50 Ohm	-30°C ~ 85°C	2.5 V ~ 3.4 V	LTE	18-UFQFN Exposed Pad	PG-ATSLP-18
BGS110MN20E6327XTSA1	Infineon Technologies	IC SWITCH RF SPDT TSNP-20 Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,276	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS15M2A12E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 2.7GHz Isolation @ Frequency: 30dB @ 2GHz (typ) Insertion Loss @ Frequency: 0.4dB @ 2GHz IIP3: - Topology: - Circuit: SP5T P1dB: - Features: - Impedance: - Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3.3V RF Type: LTE, W-CDMA Package / Case: - Supplier Device Package: -	패키지: -	재고5,076	2.7GHz	30dB @ 2GHz (typ)	0.4dB @ 2GHz	-	-	SP5T	-	-	-	-30°C ~ 85°C	3.3V	LTE, W-CDMA	-	-
BGSA14RN10E6327XTSA1	Infineon Technologies	ANTENNA DEVICES Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,914	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BGS14PN10E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 500MHz Frequency - Upper: 6GHz Isolation @ Frequency: 18dB @ 6GHz (typ) Insertion Loss @ Frequency: 1.2dB @ 6GHz IIP3: 73dBm (typ) Topology: - Circuit: SP4T P1dB: - Features: - Impedance: 50 Ohm Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8 V ~ 3.6 V RF Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,038	6GHz	18dB @ 6GHz (typ)	1.2dB @ 6GHz	73dBm (typ)	-	SP4T	-	-	50 Ohm	-40°C ~ 85°C	1.8 V ~ 3.6 V	-	-	-
BGS17GA14E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: SP7T P1dB: - Features: - Impedance: - Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4 V ~ 3.4 V RF Type: LTE, W-CDMA Package / Case: - Supplier Device Package: -	패키지: -	재고3,942	3.8GHz	-	-	-	-	SP7T	-	-	-	-30°C ~ 85°C	2.4 V ~ 3.4 V	LTE, W-CDMA	-	-
BGS16GA14E6327XTSA1	Infineon Technologies	CMOS SWITCH Frequency - Lower: 100MHz Frequency - Upper: 3.8GHz Isolation @ Frequency: 33dB @ 3GHz (typ) Insertion Loss @ Frequency: 0.5dB @ 3GHz IIP3: - Topology: - Circuit: SP6T P1dB: - Features: - Impedance: - Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V RF Type: LTE, W-CDMA Package / Case: - Supplier Device Package: -	패키지: -	재고5,688	3.8GHz	33dB @ 3GHz (typ)	0.5dB @ 3GHz	-	-	SP6T	-	-	-	-30°C ~ 85°C	3V	LTE, W-CDMA	-	-