Infineon Technologies 제품

IRG7CH42UED

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AUIRF3315STRL

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BCR523UE6433HTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.33W SC74

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 100MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: PG-SC74-6

패키지: SC-74, SOT-457

BAR6406WE6327HTSA1

Infineon Technologies

DIODE RF CA 150V 100MA SOT-323

• Diode Type: PIN - 1 Pair Common Anode
• Voltage - Peak Reverse (Max): 150V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

IDB09E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 19.3A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 19.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TLE4268GSXUMA1

Infineon Technologies

IC REG LINEAR 5V 180MA 8DSO-16

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 150mA
• Current - Output: 180mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 450µA ~ 20mA
• PSRR: -
• Control Features: Reset, Watchdog
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-16

패키지: 8-SOIC (0.154", 3.90mm Width)

IR1168STRPBF

Infineon Technologies

IC SECONDARY SIDE CTRLR 8SOIC

• Applications: Secondary-Side Controller, Synchronous Rectifier
• Voltage - Input: -
• Voltage - Supply: 8.6 V ~ 18 V
• Current - Supply: 48mA
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

6EDL04N02PRXUMA1

Infineon Technologies

IC GATE DRVR 200V 3PHASE 28TSSOP

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 17.5 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 60ns, 26ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28

패키지: 28-TSSOP (0.173", 4.40mm Width)

2ED020I12F2XUMA1

Infineon Technologies

IC DRIVER IGBT DSO36

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT
• Voltage - Supply: 13 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.5V, 3.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 30ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-36-38

패키지: 36-BSSOP (0.295", 7.50mm Width)

ICE3B0365L

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 20 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 22W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

패키지: 8-DIP (0.300", 7.62mm)

PEB 3341 F V2.2

Infineon Technologies

IC CODEC VOIP 100-TQFP

• Function: Voice Over IP Processor
• Interface: Parallel, PCM, Serial
• Number of Circuits: 1
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: PG-TQFP-100

패키지: 100-LQFP

SAF-XC866-2FRI BC

Infineon Technologies

IC MCU 8BIT 8KB FLASH 38TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 86MHz
• Connectivity: SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 768 x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: 38-TSSOP

패키지: 38-TFSOP (0.173", 4.40mm Width)

BGA924N6BOARDTOBO1

Infineon Technologies

LNA BOARDS

• Type: Amplifier
• Frequency: 1.55GHz ~ 1.615GHz
• For Use With/Related Products: BGA924N6
• Supplied Contents: Board

패키지: -

SLB9665TT20FW563XUMA3

Infineon Technologies

TPM

• Applications: Trusted Platform Module (TPM)
• Core Processor: 16-Bit
• Program Memory Type: NVM (7.04kB)
• Controller Series: -
• RAM Size: -
• Interface: LPC
• Number of I/O: 1
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28-2

패키지: 28-TSSOP (0.173", 4.40mm Width)

BTS54040LBFXUMA1

Infineon Technologies

BTS54040 - SPOC SPI POWER CONTRO

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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FF75R12YT3BOMA1

Infineon Technologies

IGBT MOD 1200V 100A 345W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 345 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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CY8C4127AZS-S445T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16, 20x10/12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

패키지: -

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S27KL0643DPBHV023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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IPW65R280E6FKSA1

Infineon Technologies

MOSFET N-CH 650V 13.8A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

패키지: -

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MB15E07SRPFT-G-BNDE1

Infineon Technologies

IC SYNTHESIZER 16TSSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CY8C4024LQA-S411T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 19
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b; D/A 1x7/1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: -

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FZ2400R12HE4B9NPSA1

Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: Trench Field Stop
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 3560 A
• Power - Max: 13500 W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

패키지: -

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IPC60R070CFD7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

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2SP0115T2A0FF300R17NPSA1

Infineon Technologies

MODULE GATE DRIVER

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

패키지: -

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IFS200B12N3E4B37BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3B

패키지: -

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FF450R17ME4B11BOSA1

Infineon Technologies

IGBT MOD 1700V 600A 2500W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: 2500 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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S29GL064N90FAI010

Infineon Technologies

IC FLASH 64MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

패키지: -

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BCR129FE6327

Infineon Technologies

TRANS PREBIAS NPN 50V SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-3

패키지: -

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